초록 ▼

A method and system for electron beam lithography at high throughput with shorter electron beam column length, reduced electron-electron interactions, and higher beam current. The system includes a photocathode having a pattern composed of a periodic array of apertures with a specific geometry. The

A method and system for electron beam lithography at high throughput with shorter electron beam column length, reduced electron-electron interactions, and higher beam current. The system includes a photocathode having a pattern composed of a periodic array of apertures with a specific geometry. The spacing of the apertures is chosen so as to maximize the transmission of the laser beam through apertures significantly smaller than the photon wavelength. The patterned photocathode is illuminated by an array of laser beams to allow blanking and gray-beam modulation of the individual beams at the source level by the switching of the individual laser beams in the array. Potential applications for this invention include electron beam direct write on wafers and mask patterning.

대표청구항 ▼

A method and system for electron beam lithography at high throughput with shorter electron beam column length, reduced electron-electron interactions, and higher beam current. The system includes a photocathode having a pattern composed of a periodic array of apertures with a specific geometry. The

A method and system for electron beam lithography at high throughput with shorter electron beam column length, reduced electron-electron interactions, and higher beam current. The system includes a photocathode having a pattern composed of a periodic array of apertures with a specific geometry. The spacing of the apertures is chosen so as to maximize the transmission of the laser beam through apertures significantly smaller than the photon wavelength. The patterned photocathode is illuminated by an array of laser beams to allow blanking and gray-beam modulation of the individual beams at the source level by the switching of the individual laser beams in the array. Potential applications for this invention include electron beam direct write on wafers and mask patterning. 47, 19961000, Sakurai, 295/832; US-5592563, 19970100, Zahavi, 382/154; US-5608642, 19970300, Onedera, 700/231; US-5619328, 19970400, Sakurai, 356/621; US-5660519, 19970800, Ohta et al., 414/783; US-5661561, 19970800, Wurz et al., 356/386; US-5671527, 19970900, Asai et al., 029/740; US-5694219, 19971200, Kim, 356/375; US-5724722, 19980300, Hashimoto, 029/740; US-5739846, 19980400, Gieskes, 348/087; US-5743005, 19980400, Nakao et al., 029/833; US-5768759, 19980600, Hudson, 029/407.04; US-5777746, 19980700, Dlugos, 356/380; US-5787577, 19980800, Kent, 029/833; US-5832107, 19981100, Choate, 382/154; US-5839186, 19981100, Onodera, 029/720; US-5855059, 19990100, Togami et al., 297/740; US-5864944, 19990200, Kashiwagi et al., 029/833; US-5878484, 19990300, Araya et al., 029/740; US-5999266, 19991200, Takahashi et al., 356/376; US-5999640, 19991200, Hatase et al., 382/151; US-6018865, 20000200, Michael, 029/740; US-6031242, 20000200, Hudson, 250/548; US-6118538, 20000900, Haugan et al., 356/375; US-6195165, 20010200, Sayegh, 356/376; US-6232724, 20010500, Onimoto et al., 315/161; US-6243164, 20010600, Baldwin et al., 356/375; US-6291816, 20010900, Liu, 250/234; US-6292261, 20010900, Fishbaine et al., 356/375; US-6342916, 20020100, Kashiwagi et al., 348/087 label attached to a probe which binds specifically to the at least one target analyte to form a target analyte-labeled probe complex, flowing the liquid mixture across a lateral surface to a capture area on the lateral surface, wherein the capture area has immobilized thereon at least one capture probe which binds specifically to the target analyte-labeled probe complex, illuminating the capture area with excitation radiation; and detecting emission radiation from the capture area, wherein the emission radiation has a shorter wavelength than the excitation radiation. 36. The method of claim 35, wherein the lateral surface is comprised of a chromatographic material. 37. The method of claim 36, wherein the lateral surface is a wick. 38. The method