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A microprocessor-controlled mobile machine for curing a floor coating includes a source of radiant energy in the form of ultraviolet (UV) light which is mounted to the machine. The machine may be operated in a Traverse mode under operator control of speed for moving to an application site. A Standby

A microprocessor-controlled mobile machine for curing a floor coating includes a source of radiant energy in the form of ultraviolet (UV) light which is mounted to the machine. The machine may be operated in a Traverse mode under operator control of speed for moving to an application site. A Standby mode permits the UV applicator to operate at a quiescent state to reduce warm-up time while permitting the machine to be maneuvered by the operator. A Cure mode (of which there may be a plurality) operates the machine at predetermined, processor-controlled speed and the UV applicator at a predetermined power level.

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A microprocessor-controlled mobile machine for curing a floor coating includes a source of radiant energy in the form of ultraviolet (UV) light which is mounted to the machine. The machine may be operated in a Traverse mode under operator control of speed for moving to an application site. A Standby

A microprocessor-controlled mobile machine for curing a floor coating includes a source of radiant energy in the form of ultraviolet (UV) light which is mounted to the machine. The machine may be operated in a Traverse mode under operator control of speed for moving to an application site. A Standby mode permits the UV applicator to operate at a quiescent state to reduce warm-up time while permitting the machine to be maneuvered by the operator. A Cure mode (of which there may be a plurality) operates the machine at predetermined, processor-controlled speed and the UV applicator at a predetermined power level. of apertures being such that the size of each of said apertures is smaller than said characteristic wavelength and further being such that the separation period of said periodic array of apertures is chosen so as to enhance the transmission of said one or more light beams through said metal layer, so that radiation of said one or more light beams transmitted through said apertures impinges upon a photoemissive material so that one or more electron beams are generated. 2. A method as recited in claim 1 further comprising the step of directly writing a pattern on a target using said one or more electron beams. 3. A method as recited in claim 1 wherein said step of generating one or more light beams includes generating an array of laser beams. 4. A method as recited in claim 1 wherein said step of generating one or more light beams includes generating an array of laser beams, and further comprising the step of directly writing a pattern on a target using said one or more electron beams. 5. A method as recited in claim 4 wherein said direct writing step includes controlling said one or more electron beams by individually modulating each laser beam in said array of laser beams. 6. A method as recited in claim 4 wherein said target is a semiconductor wafer or photomask and said pattern defines circuitry features. 7. A method as recited in claim 1 wherein said directing step includes focusing said one or more light beams onto said metal layer. 8. A method as recited in claim 1 further comprising the step of focusing said one or more electron beams onto a target using electron optics. 9. A method as recited in claim 8 further comprising the step of directly writing a pattern on said target using said one or more electron beams. 10. A method as recited in claim 8 wherein said step of generating one or more light beams includes generating an array of laser beams. 11. A method as recited in claim 8 wherein said step of generating one or more light beams includes generating an array of laser beams, and further comprising the step of directly writing a pattern on the target using said one or more electron beams. 12. A method as recited in claim 11 wherein said direct writing step includes controlling said one or more electron beams by individually modulating each laser beam in said array of laser beams. 13. A method as recited in claim 11 wherein said target is a semiconductor wafer or photomask and said pattern defines circuitry features. 14. A method of generating one or more electron beams for use in electron beam lithography comprising the steps of: generating one or more monochromatic light beams having a characteristic wavelength; focusing said one or more light beams onto a metal layer which defines a periodic array of apertures having a separation period, said periodic array of apertures being such that the size of each of said apertures is smaller than said characteristic wavelength and further being such that the separation period of said periodic array of apertures is chosen so as to enhance the transmission of said one or more light beams through said metal layer, so that radiation of said one or more light beams transmitted through said apertures impinges upon a photoemissive material so that one or more electron beams are generated; and focusing said one or more electron beams onto a target using electron optics. 15. A method as recited in claim 14 further comprising the step of directly writing a pattern on said target using said one or more electron beams. 16. A method as recited in claim 14 wherein said step of generating one or more light beams includes generating an array of laser beams. 17. A method as recited in claim 14 wherein said step of generating one or more light beams includes generating an array of laser beams, and further comprising the step of directly writing a pattern on the target using said one or more electron beams. 18. A method as recited in claim 17 wherein said direct writing step includes controlling said one or more electron beams by individually modulating each laser beam in said array of laser beams. 19. A method as recited in claim 17 wherein said target is a semiconductor wafer or photomask and said pattern defines circuitry features. 20. An apparatus for generating one or more electron beams comprising: means for generating one or more monochromatic light beams having a characteristic wavelength; and a photocathode for generating said one or more electron beams, positioned to receive said one or more light beams, said photocathode including: a metal layer which defines a periodic array of apertures having a separation period, said periodic array of apertures being such that the size of each of said apertures is smaller than said characteristic wavelength and further being such that the separation period of said periodic array of apertures is chosen so as to enhance the transmission of said one or more light beams through said metal layer; and a photoemissive material positioned to receive light transmitted through said metal layer and to generate said one or more electron beams in response thereto. 21. An apparatus as recited in claim 20 further comprising means for directly writing a pattern on a target using said one or more electron beams. 22. An apparatus as recited in claim 20 wherein said means for generating one or more light beams includes an array of laser beam sources. 23. An apparatus as recited in claim 20 wherein said means for generating one or more light beams includes an array of laser beam sources, and further comprising means for directly writing a pattern on a target using said one or more electron beams. 24. An apparatus as recited in claim 23 wherein said means for directly writing includes means for controlling said one or more electron beams by individually modulating each laser beam in said array of laser beams. 25. An apparatus as recited in claim 23 wherein said target is a semiconductor wafer or photomask, said pattern defines circuitry-features, and said means for directly writing is configured to write said pattern on the semiconductor wafer or photomask. 26. An apparatus as recited in claim 20 further comprising means for focusing said one or more light beams onto said photocathode. 27. An apparatus as recited in claim 20 wherein said photocathode further includes a dielectric layer between said metal layer and said photoemissive material. 28. An apparatus as recited in claim 27 wherein said photocathode includes a substrate in contact with said metal layer such that the metal layer is between the substrate and the dielectric layer. 29. An apparatus as recited in claim 20 further comprising electron optics for focusing said one or more electron beams onto a target. 30. An apparatus as recited in claim 29 further comprising means for directly writing a pattern on the target using said one or more electron beams. 31. An apparatus as recited in claim 29 wherein said means for generating one or more light beams includes an array of laser beam sources. 32. An apparatus as recited in claim 29 wherein said means for generating one or more light beams includes an array of laser beam sources, and further comprising means for directly writing a pattern on the target using said one or more electron beams. 33. An apparatus as recited in claim 32 wherein said means for directly writing includes means for controlling said one or more electron beams by individually modulating each laser beam in said array of laser beams. 34. An apparatus as recited in claim 32 wherein said target is a semiconductor wafer or photomask, said pattern defines circuitry features, and said means for directly writing is configured to write said pattern on the semiconductor wafer or photomask. 35. An apparatus as recited in claim 20 further comprising: means for focusing said one or more light beams onto said photocathode; and electron optics for focusing said one or more electron beams onto a target