IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0721031
(2000-11-22)
|
발명자
/ 주소 |
- Randolph, Mark W.
- Hollmer, Shane Charles
- Chen, Pau-Ling
- Fastow, Richard M.
|
출원인 / 주소 |
- Advanced Micro Devices, Inc.
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인용정보 |
피인용 횟수 :
35 인용 특허 :
12 |
초록
▼
An array of memory cells that includes a plurality of memory cells interconnected via a grid of wordlines and bitlines, wherein each of the bitlines is buried. The array further includes a plurality of contacts, wherein each of the plurality of contacts is formed every N wordlines, N=1, 2, 3, . . .
An array of memory cells that includes a plurality of memory cells interconnected via a grid of wordlines and bitlines, wherein each of the bitlines is buried. The array further includes a plurality of contacts, wherein each of the plurality of contacts is formed every N wordlines, N=1, 2, 3, . . . , and wherein each of the plurality of contacts overlies a gate of a different one of the plurality of memory cells. A strap connects one of the buried bitlines to a gate that underlies one of the plurality of contacts and wherein a column of the bitlines has a first discontinuous and a second discontinuous bitline that are separated from one another by a distance Δ.
대표청구항
▼
An array of memory cells that includes a plurality of memory cells interconnected via a grid of wordlines and bitlines, wherein each of the bitlines is buried. The array further includes a plurality of contacts, wherein each of the plurality of contacts is formed every N wordlines, N=1, 2, 3, . . .
An array of memory cells that includes a plurality of memory cells interconnected via a grid of wordlines and bitlines, wherein each of the bitlines is buried. The array further includes a plurality of contacts, wherein each of the plurality of contacts is formed every N wordlines, N=1, 2, 3, . . . , and wherein each of the plurality of contacts overlies a gate of a different one of the plurality of memory cells. A strap connects one of the buried bitlines to a gate that underlies one of the plurality of contacts and wherein a column of the bitlines has a first discontinuous and a second discontinuous bitline that are separated from one another by a distance Δ. l and said isocyanate form a formulation which is fully cured after the formulation is spray applied to a surface. 28. The composition of claim 1 wherein said isocyanate is chosen from the group consisting of diphenylmethane diisocyanate, toluene diisocyanate, hexamethylene diisocyanate, and isophorone diisocyanate. 29. The composition of claim 14 wherein said catalyst is chosen from the group consisting of dibutyltin dilaurate, dioctyltin dilaurate, tertiary amine, and organometallic compounds of tin, organometallic compounds of lead, organometallic compounds of cobalt, and organometallic compounds of zinc. 30. The composition of claim 1 wherein said polyol is chosen from the group consisting of polypropylene glycol, polyether polyol, polyester polyol, polyethylene glycol, polyoxytetramethylene glycol, hydroxyl terminated polybutadiene and their copolymer with acrylonitrile, and also cicinoleic triglyceride, and vegetable oil. 31. An in situ polymerization method of preparing a bituminous polyurethane interpenetrating elastomeric network composition comprising a bituminous material including rubber modified oxidized asphalt, a polyol blend having a polyol and a curing agent blend consisting of 3,5-dime
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