초록 ▼

There is provided a small, high-performance electrostatic capacitance probe device and a displacement measuring circuit using the probe device. The electrostatic capacitance probe device is formed from a processed, stacked substrate with a silicon substrate/insulator/silicon substrate structure. A s

There is provided a small, high-performance electrostatic capacitance probe device and a displacement measuring circuit using the probe device. The electrostatic capacitance probe device is formed from a processed, stacked substrate with a silicon substrate/insulator/silicon substrate structure. A support substrate (1) is formed through a process of etching the first silicon substrate to remove undesired portions. A probe (2) is formed by etching the second silicon substrate and provided with a proximal electrode portion (2b) secured on the support substrate (1) by means of the insulator (11) and a beam portion (2a) separated from the support substrate (1) by removing the insulator (11) from beneath the beam portion (2a). A pair of detecting electrodes (3, 4) is formed by etching the second silicon substrate, secured on the support substrate (1) by the insulator (1) and located to sandwich a portion of the beam portion (2a) close to the proximal electrode portion (2b). These electrodes have sides capacitively coupled with sides of the beam portion (2a). Deformation of the tip of the probe (2) caused from contact with a work is detected from a differential capacitance variation between the probe (2) and the pair of detecting electrodes (3, 4).

대표청구항 ▼

There is provided a small, high-performance electrostatic capacitance probe device and a displacement measuring circuit using the probe device. The electrostatic capacitance probe device is formed from a processed, stacked substrate with a silicon substrate/insulator/silicon substrate structure. A s

There is provided a small, high-performance electrostatic capacitance probe device and a displacement measuring circuit using the probe device. The electrostatic capacitance probe device is formed from a processed, stacked substrate with a silicon substrate/insulator/silicon substrate structure. A support substrate (1) is formed through a process of etching the first silicon substrate to remove undesired portions. A probe (2) is formed by etching the second silicon substrate and provided with a proximal electrode portion (2b) secured on the support substrate (1) by means of the insulator (11) and a beam portion (2a) separated from the support substrate (1) by removing the insulator (11) from beneath the beam portion (2a). A pair of detecting electrodes (3, 4) is formed by etching the second silicon substrate, secured on the support substrate (1) by the insulator (1) and located to sandwich a portion of the beam portion (2a) close to the proximal electrode portion (2b). These electrodes have sides capacitively coupled with sides of the beam portion (2a). Deformation of the tip of the probe (2) caused from contact with a work is detected from a differential capacitance variation between the probe (2) and the pair of detecting electrodes (3, 4). to said rotary system is movable are magnetized to opposite poles. 32. A thickness-measuring device as defined by claim 22, wherein said two permanent magnets between which said coil of said electromagnet attached to said rotary system is movable are magnetized to opposite poles. 33. A thickness-measuring device as defined by claim 23, wherein said two permanent magnets between which said coil of said electromagnet attached to said rotary system is movable are magnetized to opposite poles. 34. A thickness-measuring device as defined by claim 24, wherein said two permanent magnets between which said coil of said electromagnet attached to said rotary system is movable are magnetized to opposite poles. 35. A thickness-measuring device as defined by claim 25, wherein said two permanent magnets between which said coil of said electromagnet attached to said rotary system is movable are magnetized to opposite poles. 36. A thickness-measuring device as defined by claim 26, wherein said two permanent magnets between which said coil of said electromagnet attached to said rotary system is movable are magnetized to opposite poles. 37. A thickness-measuring device as defined by claim 27, wherein said two permanent magnets between which said coil of said electromagnet attached to said rotary system is movable are magnetized to opposite poles. 38. A thickness-measuring device as defined by claim 28, wherein said two permanent magnets between which said coil of said electromagnet attached to said rotary system is movable are magnetized to opposite poles. 39. A thickness-measuring device as defined by claim 29, wherein said two permanent magnets between which said coil of said electromagnet attached to said rotary system is movable are magnetized to opposite poles. 40. A thickness-measuring device as defined by claim 3, wherein said electronic system comprises: means for generating an electrical current which increases from zero and progresses linearly toward infinity for energizing said coil of said electromagnet; means for detecting an irregularit