초록 ▼

An ion implantation process system, including an ion implanter apparatus for carrying out an ion implantation process. A supply of source gas for the ion implantation process is arranged to flow to the ion implanter apparatus, which discharges an effluent gas stream including ionization products of

An ion implantation process system, including an ion implanter apparatus for carrying out an ion implantation process. A supply of source gas for the ion implantation process is arranged to flow to the ion implanter apparatus, which discharges an effluent gas stream including ionization products of the source gas during the ion implantation process. The system includes an effluent abatement apparatus for removing hazardous effluent species from the effluent gas stream. The source gas may be furnished from a low pressure gas source in which the source gas is sorptively retained in a vessel on a sorbent medium having affinity for the source gas, and desorbed for dispensing to the process system. A novel scrubbing composition may be employed for effluent treatment, and the scrubbing composition breakthrough of scrubbable component may be monitored with a device such as a quartz microbalance monitor.

대표청구항 ▼

1. A process for treating an ion implant system effluent stream to remove acid gas and hydride components thereof, comprising contacting the effluent stream with a dry scrubber composition comprising CuO and MnOx,wherein x is from 1 to 2 inclusive, and wherein the ion implant system effluent stream

1. A process for treating an ion implant system effluent stream to remove acid gas and hydride components thereof, comprising contacting the effluent stream with a dry scrubber composition comprising CuO and MnOx,wherein x is from 1 to 2 inclusive, and wherein the ion implant system effluent stream is treated to remove water therefrom, prior to or during the contacting of the effluent stream with the dry scrubber composition. 2. A process for treating an ion implant system effluent stream to remove acid gas and hydride components thereof, comprising contacting the effluent stream with a dry scrubber composition comprising CuO and MnOx,wherein x is from about 1.5 to about 1.7. 3. A process for treating an ion implant system effluent stream to concurrently remove acid and hydride components thereof, comprising contacting the effluent stream with a dry scrubber composition comprising a scrubber material impregnated with a base, wherein the scrubber material is selected from the group consisting of: (a) Fe2O3; (b) Ca(OH)2; (c) Fe2O3and MnOx,wherein x is from 1 to 2 inclusive; and (d) CuO, Al2O3,and SiO2, and wherein the base is selected from the group consisting of KOH, LiOH, NaOH, BaOH, and mixtures thereof. 4. A process according to claim 3, wherein the scrubber material is Fe2O3. 5. A process according to claim 3, wherein the scrubber material is Ca(OH)2. 6. A process according to claim 3, wherein the scrubber material is Fe2O3and MnOx, wherein x is from 1 to 2 inclusive. 7. A process according to claim 6, wherein x is between 1 and 2, and is achieved by non-integer stoichiometric ratios of oxygen to manganese. 8. A process according to claim 6, wherein x is between 1 and 2, and is achieved by physically mixing MnO with MnO2. 9. A process according to claim 3, wherein the scrubber material is CuO, Al2O3,and SiO2. 10. A process according to claim 3, wherein the base is KOH.