The present invention relates to new crystalline zeolite SSZ-47 prepared using a bicyclo ammonium cation templating agent.
대표청구항▼
The present invention relates to new crystalline zeolite SSZ-47 prepared using a bicyclo ammonium cation templating agent. e member held by said holding means after the member is separated by said separator. 12. The apparatus according to claim 8, wherein each of said holding means comprises chuck m
The present invention relates to new crystalline zeolite SSZ-47 prepared using a bicyclo ammonium cation templating agent. e member held by said holding means after the member is separated by said separator. 12. The apparatus according to claim 8, wherein each of said holding means comprises chuck means for chucking the plate member. 13. The apparatus according to claim 12, wherein said manipulator comprises pivot means for pivoting at least one of said pair of holding means about a shaft parallel to a chuck surface of said chuck means, and the direction of the major surface of the plate member is changed by said pivot means. 14. The apparatus according to claim 13, wherein the shaft as a pivot center of said holding means is arranged at a position where said pair of holding means do not interfere with each other. 15. The apparatus according to claim 12, wherein said manipulator comprises pivot means for pivoting said pair of holding means about shafts parallel to chuck surfaces of chuck means, and the direction of the major surface of the plate member is changed by said pivot means. 16. The apparatus according to claim 1, further comprising rotation means for rotating the member about a shaft perpendicular to the major surface. 17. The apparatus according to claim 16, wherein said rotation means comprises means for rotating the member when said separator separates the member. 18. The apparatus according to claim 16, wherein said separator separates the member using a stream of liquid, and said rotation means comprises means for rotating at least one of the members separated by said separator to remove the liquid sticking to the member. 19. The apparatus according to claim 1, further comprising a chamber for covering said apparatus. 20. The apparatus according to claim 19, wherein said chamber has a shutter capable of opening/closing. 21. The apparatus according to claim 20, further comprising transfer means for transferring the member to be processed to said manipulator and receiving the separated member from said manipulator, said transfer means being arranged outside said chamber and transferring/receiving the member to/from said manipulator while opening said shutter. 22. The apparatus according to claim 21, further comprising positioning means for positioning the member to be processed with respect to said manipulator. 23. The apparatus according to claim 20, wherein said shutter is closed at least when the member is separated by said separator. 24. The apparatus according to claim 1, wherein the member to be separated has a fragile layer as a separation layer, and the fragile layer is substantially parallel to the major surface of the member. 25. A separating method of separating a member, comprising: a reception step of receiving the member with a major surface whose direction matches with a first direction; a manipulation step of matching the direction of the major surface of the member with a second direction substantially perpendicular to the first direction; and a separation step of separating the member using a stream of a fluid. 26. The method according to claim 25, further comprising the second manipulation step of matching a direction of a major surface of at least one member of the members separated in the separation step with the first direction. 27. The method according to claim 25, further comprising the second manipulation step of matching directions of major surfaces of the members separated in the separation step with the first direction. 28. The method according to claim 25, wherein the first direction is a direction in which the major surface of the member is substantially horizontal. 29. The method according to claim 25, wherein the member to be processed comprises a plate member, and the separation step comprises cutting the plate member in a direction of plane to separate the member into two plate members. 30. The method according to claim 29, wherein the second direction is a direction in which the major surface of the plate member is substantially vertical, and the separation step comprises ejecting the fluid to ward the plate member in the vertical direction to separate the plate member into two plate members. 31. The method according to claim 30, wherein the first direction is a direction in which the major surface of the plate member is substantially horizontal. 32. The method according to claim 29, wherein the separation step comprises holding the plate member by sandwiching the member from two surface sides. 33. The method according to claim 25, wherein the separation step comprises separating the member using the stream of a fluid while rotating the member to be processed about a shaft perpendicular to the major surface. 34. The method according to claim 25, wherein the separation step comprises separating the member using a liquid, and the method further comprises rotating at least one of the members separated to remove the liquid sticking to the member after the member is separated in the separation step. 35. The method according to claim 25, wherein the separation step is executed in a chamber to prevent the fluid from scattering. 36. The method according to claim 25, wherein the member to be processed has a fragile layer as a separation layer, and the fragile layer is substantially parallel to the major surface of the member. 37. The method according to claim 36, wherein the fragile layer comprises a porous layer. 38. The method according to claim 37, wherein the member to be processed is prepared by bonding a first substrate sequentially having a nonporous layer and a porous layer inward from a surface to a second substrate via the nonporous layer. 39. The method according to claim 38, wherein the nonporous layer has a single-crystal silicon layer. 40. The method according to claim 39, wherein the nonporous layer has an insulated layer on the single-crystal silicon layer. 41. The method according to claim 40, wherein the insulating layer is formed from a silicon oxide. 42. The method according to claim 38, wherein the second substrate comprises an insulating substrate. 43. The method according to claim 38, wherein the second substrate comprises a transparent substrate. 44. The method according to claim 38, wherein the second substrate comprises a quartz substrate. 45. The method according to claim 38, wherein the porous layer is formed by anodizing a single-crystal silicon substrate. 46. The method according to claim 36, wherein the fragile layer comprises a layer having microcavity. 47. The method according to claim 46, wherein the member to be processed is prepared by bonding a second substrate to a surface of a first substrate incorporating a microcavity layer. 48. The method according to claim 47, wherein the microcavity layer is formed by implanting ions into a single-crystal silicon substrate. 49. The method according to claim 36, wherein the member to be processed is prepared by bonding at least two plate members, and at least one of the two plate members comprises a semiconductor substrate. 50. The method according to claim 49, wherein the semiconductor substrate comprises a single-crystal silicon substrate. 51. The method according to claim 36, wherein the member to be processed is prepared by bonding at least two plate members, and at least one of the two plate members comprises an insulating substrate. 52. The method according to claim 51, wherein the insulating substrate comprises a quartz substrate. 53. The method according to claim 36, wherein the member to be processed is prepared by bonding at least two plate members, and at least one of the two plate members comprises a transparent substrate. 54. The method according to claim 25, wherein water is used as the fluid. 55. A semiconductor substrate manufacturing method comprising the steps of: preparing a first substrate incorporating a porous layer or a microcavity layer; bonding the first substrate to a second substrate to prepare a bonded substrate stack; separating the bonded substrate stack into a first substrate side and a second substrate side using
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이 특허에 인용된 특허 (11)
Chang Clarence D. (Princeton NJ) Miale Joseph N. (Lawrenceville NJ), Increasing lattice metal content of porous inorganic crystalline compositions.
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