A system for dispensing a viscous material onto a substrate which includes a dispensing element, a viscous material reservoir and a metering device coupled between the reservoir and the dispensing element for metering a variable amount of a viscous material through the dispensing element. The dispen
A system for dispensing a viscous material onto a substrate which includes a dispensing element, a viscous material reservoir and a metering device coupled between the reservoir and the dispensing element for metering a variable amount of a viscous material through the dispensing element. The dispensing element and metering device can be moved by a positioner along a predetermined pattern adjacent a surface of a substrate. A weigh scale located adjacent the substrate receives a metered amount of the viscous material and produces signals representative of a variable weight of the material dispensed during a predetermined time interval. A controller adjusts a speed of movement of the positioner along the predetermined pattern to cause the dispensing element to dispense a desired amount of material based on a calculated flow rate. Alternatively, the controller adjusts a rate of delivery of the metering device based on the calculated flow rate to cause the dispensing element to dispense the desired amount of material along the predetermined pattern. Closed loop temperature control may be provided for the dispensing element and/or the substrate to ensure a substantially constant viscosity and a substantially constant flow rate. A prime and purge station may be provided adjacent the substrate for sucking air bubbles from the dispensing element and metering device.
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A system for dispensing a viscous material onto a substrate which includes a dispensing element, a viscous material reservoir and a metering device coupled between the reservoir and the dispensing element for metering a variable amount of a viscous material through the dispensing element. The dispen
A system for dispensing a viscous material onto a substrate which includes a dispensing element, a viscous material reservoir and a metering device coupled between the reservoir and the dispensing element for metering a variable amount of a viscous material through the dispensing element. The dispensing element and metering device can be moved by a positioner along a predetermined pattern adjacent a surface of a substrate. A weigh scale located adjacent the substrate receives a metered amount of the viscous material and produces signals representative of a variable weight of the material dispensed during a predetermined time interval. A controller adjusts a speed of movement of the positioner along the predetermined pattern to cause the dispensing element to dispense a desired amount of material based on a calculated flow rate. Alternatively, the controller adjusts a rate of delivery of the metering device based on the calculated flow rate to cause the dispensing element to dispense the desired amount of material along the predetermined pattern. Closed loop temperature control may be provided for the dispensing element and/or the substrate to ensure a substantially constant viscosity and a substantially constant flow rate. A prime and purge station may be provided adjacent the substrate for sucking air bubbles from the dispensing element and metering device. here the first semiconductor laser has a first facet and a second facet; (b) determining the facet reflectance R0; (c) measuring a threshold current density J1of the first semiconductor laser; (d) measuring a threshold current density J2of the second semiconductor laser; (e) if the reflectance of the first facet of the first semiconductor laser is modified and the second facet of the first semiconductor laser is not modified then setting u=1, x=1, and y=1; (f) if the reflectance of the first facet and the second facet of the first semiconductor laser are modified to the same extent then setting u=1, x=1, and y=0.5; (g) if the reflectance of the first facet of the first semiconductor laser is not modified and the second facet of the first semiconductor laser is modified then setting u=1, x=1, and y-1; (h) measuring a threshold current density J3of the modified first semiconductor laser; and (i) determining the reflectance of each modified facet of the first semiconductor laser as follows: R1=(u){(R0)Expx-(2y[(1/L1)-(1/L2)]L1(J1-J3)/(J1-J2))]}, Shimokawa et al., "Characterization Of High-Efficiency Cast-Si Solar Cell Wafers by MBIC Measurement," Japanese Journal Of Applied Physics, vol. 27, No. 5, May, 1988, pp. 751-758. 4) JP 08-78329 English abstract. 5) JP 09-191111 English abstract. 6) JP 10-92576 English abstract. 7) JP 10-104659 English abstract. 8) JP 10-135468 English abstract. 9) JP 10-135469 English abstract. 10) JP 10-233511 English abstract. 11) JP 10-294280 English abstract. 12) JP 11-191628 English abstract. 13) JP 11-345767 English abstract. 14) JP 11-354442 English abstract. 15) US Patent application No. 09/433,705 (pending) including specification, claims, abstract and drawings. 16) US Patent application No. 09/619,732 (pending) to Yamazaki et al., including specification, claims, abstract, drawings and PTO filing receipt. 17) US Patent application No. 09/714,891 (pending) including specification, claims, abstract and drawings. English abstract re Japanese Patent Application No. JP 7-130652, published May 19, 1995. English abstract re Japanese Patent Application No. JP 9-293600, published Nov. 11, 1997. JP 6-148685 full English translation. JP 7-235680 full English translation. JP 8-274336 full English translation. 1) English Abstract re Japanese Patent Application No. 6-148685 published May 27, 1994. 2) English Abstract re Japanese Patent Application No. 7-235680 published Sep. 5, 1995. 3) English Abstract re Japanese Patent Application No. 8-274336 published Oct. 18, 1996.
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