Method and apparatus for measuring photoelectric conversion characteristics of photoelectric conversion device
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G06F-015/12
H01L-031/00
출원번호
US-0893640
(2001-06-29)
우선권정보
JP-0203274 (2000-07-05)
발명자
/ 주소
Matsuyama, Jinsho
출원인 / 주소
Canon Kabushiki Kaisha
대리인 / 주소
Fitzpatrick, Cella, Harper & Scinto
인용정보
피인용 횟수 :
8인용 특허 :
6
초록▼
To provide a measuring method capable of measuring even a large-area stacked photoelectric conversion device such as a module or array either indoors or outdoors and accurately measuring the photoelectric conversion characteristics using an inexpensive measuring system, the photoelectric conversion
To provide a measuring method capable of measuring even a large-area stacked photoelectric conversion device such as a module or array either indoors or outdoors and accurately measuring the photoelectric conversion characteristics using an inexpensive measuring system, the photoelectric conversion characteristics of a photoelectric conversion device under irradiation light in a plurality of spectral states and a shift of the short-circuit current of each component cell of the photoelectric conversion device from the standard test condition are estimated, and the measured photoelectric conversion characteristics and the estimated shift are compared, thereby obtaining the photoelectric conversion characteristics of the photoelectric conversion device in the standard test conditions.
대표청구항▼
To provide a measuring method capable of measuring even a large-area stacked photoelectric conversion device such as a module or array either indoors or outdoors and accurately measuring the photoelectric conversion characteristics using an inexpensive measuring system, the photoelectric conversion
To provide a measuring method capable of measuring even a large-area stacked photoelectric conversion device such as a module or array either indoors or outdoors and accurately measuring the photoelectric conversion characteristics using an inexpensive measuring system, the photoelectric conversion characteristics of a photoelectric conversion device under irradiation light in a plurality of spectral states and a shift of the short-circuit current of each component cell of the photoelectric conversion device from the standard test condition are estimated, and the measured photoelectric conversion characteristics and the estimated shift are compared, thereby obtaining the photoelectric conversion characteristics of the photoelectric conversion device in the standard test conditions. 5/002; US-3927300, 19751200, Wada et al., 219/381; US-3933550, 19760100, Erwin, 156/085; US-3943328, 19760300, Cunningham, 219/335; US-3952182, 19760400, Flanders, 219/309; US-3968348, 19760700, Stanfield, 219/535; US-3974358, 19760800, Goltsos, 219/387; US-3976855, 19760800, Altmann et al., 219/532; US-3985928, 19761000, Watanabe et al., 428/273; US-3987275, 19761000, Hurko, 219/461; US-4021642, 19770500, Fields, Jr., 219/391; US-4038519, 19770700, Foucras, 219/301; US-4046989, 19770900, Parise et al., 219/437; US-4058702, 19771100, Jerles, 219/321; US-4060710, 19771100, Reuter et al., 219/548; US-4068115, 19780100, Mack et al., 219/386; US-4083355, 19780400, Schwank, 126/039.J; US-4094297, 19780600, Ballentine, 126/039.J; US-4102256, 19780700, John et al., 099/372; US-4112410, 19780900, Wrob et al., 338/243; US-4117311, 19780900, Strum, 219/544; US-4119834, 19781000, Losch, 392/418; US-4152578, 19790500, Jacobs, 219/336; US-4158078, 19790600, Egger et al., 428/102; US-4176274, 19791100, Lippera, 219/522; US-4186294, 19800100, Bender, 219/527; US-4201184, 19800500, Scheidler et al., 126/039.J; US-4217483, 19800800, Vogel et al., 219/514; US-4224505, 19800900, Sturm, 219/544; US-4233495, 19801100, Scoville et al., 219/386; US-4245149, 19810100, Fairlie, 219/528; US-4250397, 19810200, Gray et al., 392/435; US-4272673, 19810600, Semanaz et al., 219/544; US-4294643, 19811000, Tadewald, 156/293; US-4296311, 19811000, Hag
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