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A ferroelectric device includes a ferroelectric layer and an electrode. The ferroelectric material is made of a perovskite or a layered superlattice material. A superlattice generator metal oxide is deposited as a capping layer between said ferroelectric layer and said electrode to improve the resid

A ferroelectric device includes a ferroelectric layer and an electrode. The ferroelectric material is made of a perovskite or a layered superlattice material. A superlattice generator metal oxide is deposited as a capping layer between said ferroelectric layer and said electrode to improve the residual polarization capacity of the ferroelectric layer.

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1. In a ferroelectric device including a substrate supporting a thin film ferroelectric self-ordering layered superlattice material and a top electrode, the improvement comprising a capping layer ranging from 3 nm to 30 nm in thickness interposed between said thin film ferroelectric self-ordering la

1. In a ferroelectric device including a substrate supporting a thin film ferroelectric self-ordering layered superlattice material and a top electrode, the improvement comprising a capping layer ranging from 3 nm to 30 nm in thickness interposed between said thin film ferroelectric self-ordering layered superlattice material and said electrode, said capping layer comprising a non-ferroelectric material enriched with a superlattice generator metal. 2. The ferroelectric device as set forth in claim 1 wherein said superlattice generator metal consists essentially of bismuth. 3. The ferroelectric device as set forth in claim 1 wherein said superlattice generator metal is identical to a superlattice generator element in said self-ordering layered superlattice material. 4. The ferroelectric device as set forth in claim 1 wherein said layered superlattice material is selected from the group consisting of strontium bismuth tantalate, strontium bismuth niobate, and strontium bismuth niobium tantalate. 5. The ferroelectric device as set forth in claim 1 wherein said capping layer is in direct contact with said ferroelectric material and said electrode. 6. The ferroelectric device as set forth in claim 1 wherein said capping layer has a thickness ranging from 5 nm to 20 nm. 7. The ferroelectric device as set forth in claim 1 wherein said electrode is a top electrode, said top electrode being remote from said substrate relative to said ferroelectric layer. 8. The ferroelectric device as set forth in claim 7 including a bottom electrode interposed between said ferroelectric material and said substrate. 9. The ferroelectric device as set forth in claim 1 wherein said capping layer material is selected from the group consisting of bismuth oxide, bismuth strontate, bismuth tantalate, bismuth niobate, and bismuth niobium tantalate. 10. The ferroelectric device as set forth in claim 1 wherein said capping layer comprises bismuth oxide. 11. In a ferroelectric device including a substrate supporting a thin film ferroelectric self-ordering layered superlattice material, and an electrode, the improvement comprising a capping layer ranging from 3 nm to 30 nm thick interposed between said thin film ferroelectric self-ordering layered superlattice material and said electrode, said capping layer being enriched with a superlattice generator metal. 12. The ferroelectric device as set forth in claim 11 wherein said capping layer has a thickness ranging from 5 nm to 20 nm. 13. The ferroelectric device as set forth in claim 11 wherein said capping layer material is selected from the group consisting of bismuth oxide, bismuth strontate, bismuth tantalate, bismuth niobate, and bismuth niobium tantalate. 14. The ferroelectric device as set forth in claim 11 wherein said capping layer comprises bismuth oxide. 15. The ferroelectric device as set forth in claim 11 wherein said electrode is a top electrode, said top electrode being remote from said substrate relative to said ferroelectric layer.