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A structure and method thereof for providing an electrically conductive path between a first conductive point and a second conductive point. The structure includes an insulating material disposed between the first conductive point and the second conductive point. A dipole material is distributed wit

A structure and method thereof for providing an electrically conductive path between a first conductive point and a second conductive point. The structure includes an insulating material disposed between the first conductive point and the second conductive point. A dipole material is distributed within the insulating material. The dipole material is comprised of randomly oriented magnetic particles. The magnetic particles in a selected localized region of the insulating material are aligned to form an electrically conductive path between the first conductive point and the second conductive point through the insulating material.

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A structure and method thereof for providing an electrically conductive path between a first conductive point and a second conductive point. The structure includes an insulating material disposed between the first conductive point and the second conductive point. A dipole material is distributed wit

A structure and method thereof for providing an electrically conductive path between a first conductive point and a second conductive point. The structure includes an insulating material disposed between the first conductive point and the second conductive point. A dipole material is distributed within the insulating material. The dipole material is comprised of randomly oriented magnetic particles. The magnetic particles in a selected localized region of the insulating material are aligned to form an electrically conductive path between the first conductive point and the second conductive point through the insulating material. on opposing sides thereof. 4. The semiconductor die assembly of claim 1, wherein at least some lead fingers of the first offset lead frame and at least some lead fingers of the second offset lead frame are attached to a common primary lead finger. 5. The semiconductor die assembly of claim 1, wherein the first semiconductor die and the second semiconductor die are identical. 6. The semiconductor die assembly of claim 5, wherein each lead finger of the first offset lead frame is attached to a first side of a primary lead finger and each lead finger of the second offset lead frame is attached to a second, opposing side of a primary lead finger to which a lead finger of the first offset lead frame is attached. 7. The semiconductor die assembly of claim 6, wherein the identical first and second semiconductor dice comprise identical memory dice of substantially equal memory capacity. 8. The semiconductor die assembly of claim 1, wherein the primary lead fingers extend away from the die attach site on opposing sides thereof. 9. The semiconductor die assembly of claim 1, wherein at least some lead fingers of the first offset lead frame and at least some lead fingers of the second offset lead frame are attached to a common primary lead finger. 10. The semiconductor die assembly of claim 1, wherein the first semiconductor die and the second semiconductor die are identical. 11. The semiconductor die assembly of claim 10, wherein each lead finger of the first offset lead frame is attached to a first side of a primary lead finger and each lead finger of the second offset lead frame is attached to a second, opposing side of a primary lead finger to which a lead finger of the first offset lead frame is attached. 12. The semiconductor die assembly of claim 11, wherein the identical first and second semiconductor dice comprise identical memory dice of substantially equal memory capacity. 13. A semiconductor assembly comprising: at least a first die and a second die stacked back to back with a common base lead frame disposed therebetween; a first lead frame and a second lead frame attached to the common base lead frame, the first lead frame and the second lead frame each having lead fingers respectively extending from points of attachment to lead fingers of the common base lead frame over active surfaces of the first die and the second die and electrically connected to bond pads of the respective first and second dice; and a dielectric material encapsulating the first die and the second die, a portion of the common base lead frame lying therebetween, the first lead frame and the second lead frame, and inner ends of the lead fingers of the common base lead frame; wherein the lead fingers of the first lead frame and the second lead frame respectively extend over the active surfaces of the first die and the second die in a cantilevered manner; and wherein the cantilevered lead fingers of the first lead frame and the second lead frame are encapsulated by the dielectric material from the points of attachment to the lead fingers of the common base lead frame to end portions thereof. 14. A semiconductor die assembly in process, comprising: a base lead frame having two semiconductor dice mounted thereto and a plurality of lead fingers; and first and second offset lead frames, each having a plurality of lead fingers attached to primary lead fingers of the base lead frame and extending over one of the two semiconductor dice; wherein the lead fingers of the first lead frame and the second lead frame respectively extend over the active surfaces of the first die and the second die in a cantilevered manner; and wherein each lead frame includes at least one dam bar extending between a plurality of lead fingers of that respective lead frame, and wherein at least a portion of at least one dam bar of each lead frame is superimposed with at least a portion of at least one dam bar of the other lead frames.