초록 ▼

A method of forming substrates. The method includes providing a donor substrate; and forming a particle accumulation region at a selected depth in the donor substrate. The method includes diffusing a plurality of particles into the particle accumulation region to add stress to the particle accumulat

A method of forming substrates. The method includes providing a donor substrate; and forming a particle accumulation region at a selected depth in the donor substrate. The method includes diffusing a plurality of particles into the particle accumulation region to add stress to the particle accumulation region; and separating a thickness of material above the selected depth in the donor substrate.

대표청구항 ▼

1. A method of fabricating a multi-layered substrate, the method comprising: providing a donor substrate; introducing a plurality of first particles through a surface of the donor substrate to a first depth to define a particle accumulation region; introducing a plurality of second particles to

1. A method of fabricating a multi-layered substrate, the method comprising: providing a donor substrate; introducing a plurality of first particles through a surface of the donor substrate to a first depth to define a particle accumulation region; introducing a plurality of second particles to a second depth of the donor substrate; diffusing the second particles from the second depth to the particle accumulation region to add stress to the particle accumulation region; joining the donor substrate to a handle substrate; and separating the donor substrate from the handle substrate at the particle accumulation region. 2. The method of claim 1 wherein the donor substrate comprises a silicon wafer. 3. A method of fabricating a film of material, the method comprising: providing a donor substrate; introducing a plurality of first particles through a surface of the donor substrate to a first depth to define a particle accumulation region and a material region about the particle accumulation region; introducing a plurality of second particles to a second depth of the donor substrate; diffusing the second particles from the second depth to the particle accumulation region to add stress to the particle accumulation region; and continuing to diffuse the second particles to the particle accumulation region to cause a crystalline rearrangement effect and a pressure to cause a separation of the material region from the donor substrate at the particle accumulation region. 4. The method of claim 3 further comprising joining the donor substrate to a handle substrate before the separation of the material region. 5. A The method of claim 3 wherein the second particles are selected from hydrogen or helium. 6. The method of claim 1, wherein the donor substrate is a silicon substrate having (100) crystal orientation. 7. The method of claim 1, wherein the plurality of first particles are hydrogen ions. 8. The method of claim 1, wherein the plurality of second particles are hydrogen ions. 9. The method of claim 1, wherein the separating is provided using a controlled cleaving process. 10. The method of claim 3, wherein the donor substrate is a silicon substrate having (100) crystal orientation. 11. The method of claim 3, wherein the plurality of first particles are hydrogen. 12. The method of claim 3, wherein the plurality of second particles are hydrogen.