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A semiconductor device includes a semiconductor layer used as a substrate formed on an insulating film, a plurality of MOS transistors arranged on the semiconductor layer and each having a gate, a source, and a drain, a pair of MOS transistors of the plurality of MOS transistors constituting a detec

A semiconductor device includes a semiconductor layer used as a substrate formed on an insulating film, a plurality of MOS transistors arranged on the semiconductor layer and each having a gate, a source, and a drain, a pair of MOS transistors of the plurality of MOS transistors constituting a detection circuit for detecting magnitudes of potentials applied to the gates as a difference between conductances of the pair of transistors, and a diffusion layer region of the same conductivity type as that of the semiconductor layer, arranged on one of portions of the sources and drains of the pair of MOS transistors constituting the detection circuit, for connecting portions serving as the substrates of the pair of MOS transistors to each other.

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A semiconductor device includes a semiconductor layer used as a substrate formed on an insulating film, a plurality of MOS transistors arranged on the semiconductor layer and each having a gate, a source, and a drain, a pair of MOS transistors of the plurality of MOS transistors constituting a detec

A semiconductor device includes a semiconductor layer used as a substrate formed on an insulating film, a plurality of MOS transistors arranged on the semiconductor layer and each having a gate, a source, and a drain, a pair of MOS transistors of the plurality of MOS transistors constituting a detection circuit for detecting magnitudes of potentials applied to the gates as a difference between conductances of the pair of transistors, and a diffusion layer region of the same conductivity type as that of the semiconductor layer, arranged on one of portions of the sources and drains of the pair of MOS transistors constituting the detection circuit, for connecting portions serving as the substrates of the pair of MOS transistors to each other. rtion of the source/drain, and the pixel electrode layer is connected to the source/drain electrode through the contact hole. 9. The thin film transistor of claim 8, wherein the source/drain has two separated portions, and the amorphous silicon layer, the n+ amorphous silicon layer and the source/drain have substantially the same planar shape except for a portion between the two separated portions. 10. The thin film transistor of claim 3, wherein the source/drain has two separated portions, and the amorphous silicon layer, the n+ amorphous silicon layer and the source/drain have substantially the same planar shape except for a portion between the two separated portions. odynamic Systems," from Micro Electro Mechanical Systems conference in Travemunde Germany (1992). Hames et al., Nuclear acid hybridization, a practical approach, cover page and table of contents (1985). Hanahan et al., "Plasmid Screening at High Colony Density," Meth. Enzymology, 100:333-342 (1983). Hanahan et al., "Plasmid screening at high colony density," Gene, 10:63-67 (1980). Haridasan et al., "Peptide Synthesis using Photolytically Cleavable 2-Nitrobenzyloxycarbonyl Protecting Group," Proc. Indian Natn. Sci. Adad., 53A(6):717-728 (1987). Harrison et al., "Capillary Electrophoresis and Sample Injection Systems Integrated on a Planar Glass Chip," Anal. Chem., 64:1926-1932 (1992). Harrison et al., "Micromachining a Minaturized Capillary Electrophoresis-Based Chemical Analysis System on a Chip," Science, 261:895-897 (1993). Harrison et al., "Towards minaturized electrophoresis and chemical analysis systems on silicon: an alternative to chemical sensors*," Sensors and Actuators, B10:107-116 (1993). Harrison et al., "Rapid separation of fluorescein derivatives using a micromachined capillary electrophoresis system," Analytica Chemica Acta, 283:361-366 (1993). Hellberg et al., "Minimum analogue peptide sets (MAPS) for quantitative structure-activity relationships," Int. J. Peptide Protein Res., 37:4