초록 ▼

A method for manufacturing complex shape memory alloy materials is described. The method comprises generating a particulate form of a shape memory alloy, combining the particulate with a binder, molding, heating (which may include the steps of debinding and sintering), and thermo-mechanical processi

A method for manufacturing complex shape memory alloy materials is described. The method comprises generating a particulate form of a shape memory alloy, combining the particulate with a binder, molding, heating (which may include the steps of debinding and sintering), and thermo-mechanical processing. The method allows for the formation of complex shape memory alloy materials that exhibit the desirable properties of shape memory alloys, namely shape memory and superelasticity.

대표청구항 ▼

A method for manufacturing complex shape memory alloy materials is described. The method comprises generating a particulate form of a shape memory alloy, combining the particulate with a binder, molding, heating (which may include the steps of debinding and sintering), and thermo-mechanical processi

A method for manufacturing complex shape memory alloy materials is described. The method comprises generating a particulate form of a shape memory alloy, combining the particulate with a binder, molding, heating (which may include the steps of debinding and sintering), and thermo-mechanical processing. The method allows for the formation of complex shape memory alloy materials that exhibit the desirable properties of shape memory alloys, namely shape memory and superelasticity. first portion and the second portion of the mask; removing the first portion of the mask to expose the desired pattern in the core layer while leaving the second portion of the mask in place; partially oxidising the second portion of the mask; forming an overclad layer on the exposed portions of the core layer corresponding to the desired pattern in the core layer, while leaving the oxidized second portion of the mask in place; creating a second circuit layer overlaid on the first circuit layer, the second circuit layer having at least one optical feature to be disposed at a predetermined position, the predetermined position of the at least one optical feature being controlled by alignment of said at least one optical feature to the one or more alignment marks in the first circuit layer. 6. The method of claim 5 wherein the step of removing the first portion of the mask further comprises the steps of: covering the second portion of the mask with a polymer material; removing the first portion of the mask using a plasma treatment; and removing the polymer material. 7. The method of claim 5 wherein the mask is amorphous silicon. 8. The method of claim 7, wherein the step of partially oxidising the second portion of the mask further comprises the step of: subjecting the second portion of the mask to a temperature of about 1000° C. for at least five minutes in an ambient atmosphere.