초록 ▼

Electric resistance heating/warming composite fabric articles have a fabric layer having a first surface and an opposite, second surface, and an electric resistance heating/warming element in the form of a conductive yarn mounted upon first surface of the fabric layer, e.g. in embroidery stitching,

Electric resistance heating/warming composite fabric articles have a fabric layer having a first surface and an opposite, second surface, and an electric resistance heating/warming element in the form of a conductive yarn mounted upon first surface of the fabric layer, e.g. in embroidery stitching, and adapted to generate heating/warming when connected to a power source. A barrier layer may be positioned, for example, at least adjacent to the first or second surface of the fabric layer. Methods of forming electric resistance heating/warming composite fabric articles are also described.

대표청구항 ▼

Electric resistance heating/warming composite fabric articles have a fabric layer having a first surface and an opposite, second surface, and an electric resistance heating/warming element in the form of a conductive yarn mounted upon first surface of the fabric layer, e.g. in embroidery stitching,

Electric resistance heating/warming composite fabric articles have a fabric layer having a first surface and an opposite, second surface, and an electric resistance heating/warming element in the form of a conductive yarn mounted upon first surface of the fabric layer, e.g. in embroidery stitching, and adapted to generate heating/warming when connected to a power source. A barrier layer may be positioned, for example, at least adjacent to the first or second surface of the fabric layer. Methods of forming electric resistance heating/warming composite fabric articles are also described. the ball-pads. 4. The microelectronic device assembly of claim 1, further comprising a shield between the first and second conductive members. 5. The microelectronic device assembly of claim 4 wherein the shield between the first and second conductive members comprises a conductive line coupled to a voltage potential. 6. The microelectronic device assembly of claim 4 wherein the shield between the first and second lines comprises a dielectric barrier. 7. A microelectronic device assembly, comprising: a microelectronic die having an integrated circuit and a plurality of bond-pads coupled to the integrated circuit, the bond-pads including a reference voltage (Vref) bond-pad and a signal bond-pad proximate to the Vref bond-pad; and a support structure having a plurality of conductive members coupled to the die, the conductive members including a first conductive member having a first elongated section and a first bond-site coupled to the Vref bond-pad by a first wire-bond line, a second conductive member having a second elongated section and a second bond-site coupled to the signal bond-pad by a second wire-bond line immediately adjacent to the first wire-bond line without an interposing wire-bond line from another bond-pad on the microelectronic die being between the first and second wire-bond lines, and a third conductive member having a third elongated section, wherein a portion of the first elongated section proximate to the first bond-site is immediately adjacent to and spaced apart from an adjacent portion of the third elongated section by a first distance, and wherein the portion of the first elongated section proximate to the first bond-site is spaced apart from a portion of the second elongated section proximate to the second bond-site by a second distance that is greater than the first distance. 8. The microelectronic device assembly of claim 7 wherein the support structure is a lead frame comprising a perimeter frame section and the plurality of conductive members, and wherein the plurality of conductive members are leads attached to the perimeter frame section proximate to the second ends of the conductive members. 9. The microelectronic device assembly of claim 7 wherein the support structure is an interposing substrate comprising a printed circuit sheet and the plurality of conductive members, the printed circuit sheet having an opening with a first side and a second side, the conductive members further comprising ball-pads coupled to individual elongated sections, and wherein the bond-sites of the conductive members are contact pads arranged along at least one of the first side or the second side of the opening through the sheet, and the elongated sections of the conductive members are conductive traces along the sheet extending from the bond-sites to the ball-pads. 10. The microelectronic device assembly of claim 7, further comprising a shield between the first and second conductive members. 11. The microelectronic device assembly of claim 10 wherein the shield between the first and second conductive members comprises the adjacent portion of the third elongated section that is adjacent to the portion of the first elongated section proximate to the first bond-site. 12. The microelectronic device assembly of claim 10 wherein the shield between the first and second lines comprises a dielectric barrier. 13. A microelectronic device assembly, comprising: a microelectronic die having an integrated circuit and a plurality of bond-pads coupled to the integrated circuit, the bond-pads including a reference voltage (Vref) bond-pad and a signal bond-pad proximate to the Vref bond-pad; a support structure having a plurality of conductive members coupled to the die, the conductive members having a first end with a bond-site proximate to a corresponding bond-pad of the die, a second end defining an external connector, and an elongated section connecting the bond-site to the external connector, the conductive members b eing arranged so that at least a portion of the bond-sites are arranged in a first row and spaced apart from one another by a first gap width, and the conductive members including a first conductive member having a first bond-site and a second conductive member having a second bond-site, the first bond-site of the first conductive member being spaced apart from the second bond-site of the second conductive member by a second gap width greater than the first gap width; and a plurality of wire-bond lines including a first wire-bond line from the Vref bond-pad to the first bond-site of the first conductive member and a second wire-bond line from the signal bond-pad to the second bond-site of the second conductive member, the first and second wire-bond lines being immediately adjacent to one another without an interposing wire-bond line from another bond-pad on the microelectronic die being between the first and second wire-bond lines. 14. The microelectronic device assembly of claim 13 wherein the support structure is a lead frame comprising a perimeter frame section and the plurality of conductive members, wherein the plurality of conductive members are leads attached to the perimeter frame section proximate to the second ends of the conductive members. 15. The microelectronic device assembly of claim 13 wherein the support structure is an interposing substrate comprising a printed circuit sheet and the plurality of conductive members, the printed circuit sheet having an opening with a first side and a second side, and wherein the bond-sites of the conductive members are contact pads arranged along at least one of the first side or the second side of the opening through the sheet, the external connectors of the conductive members are solder ball-pads, and the elongated sections of the conductive members are conductive traces extending from the bond-sites to the ball-pads. 16. The microelectronic device assembly of claim 13, further comprising a shield between the first and second conductive members. 17. The microelectronic device assembly of claim 16 wherein the shield between the first and second conductive members comprises a conductive line coupled to a voltage potential. 18. The microelectronic device assembly of claim 16 wherein the shield between the first and second lines comprises a dielectric barrier. 19. A microelectronic device assembly, comprising: a microelectronic die having an integrated circuit and a plurality of bond-pads coupled to the integrated circuit, the bond-pads including a reference voltage (Vref) bond-pad and a signal bond-pad proximate to the Vref bond-pad; a support structure having a plurality of conductive members coupled to the die, each conductive member having a first end with a bond-site proximate to a corresponding bond-pad of the die, a second end with an external connector, and an elongated section connecting the bond-site to the external connector, the conductive members being arranged so that at least a portion of the bond-sites are in a first row proximate to one side of the bond-pads on the die, and the conductive members including a first conductive member, a second conductive member, and a third conductive member, the third conductive member coupled to an electrical potential and having a shielding section immediately adjacent to and between at least a portion of the first and second conductive members; and a plurality of wire-bond lines including a first wire-bond line from the Vref bond-pad to the first bond-site of the first conductive member and a second wire-bond line from the signal bond-pad to the second bond-site of the second conductive member. 20. The microelectronic device assembly of claim 19 wherein the support structure is a lead frame comprising a perimeter frame section and the plurality of conductive members, and wherein the plurality of conductive members are leads attached to the perimeter frame section proximate to the second ends of the conductive members