초록 ▼

A system for determining a three-dimensional image of an animal, or other symmetric object, by projecting a pattern of light on the object and capturing two images of the reflected light with two cameras located a fixed distance apart. Using triangulation, the x, y, and z locations of each element o

A system for determining a three-dimensional image of an animal, or other symmetric object, by projecting a pattern of light on the object and capturing two images of the reflected light with two cameras located a fixed distance apart. Using triangulation, the x, y, and z locations of each element of the light pattern is measured, thus creating a three-dimensional image of the surface of the object. Because animals are symmetric, an image need only be taken of one side of the animal, and the image mirrored, to determine the complete three dimensional characteristics of the animal.

대표청구항 ▼

A system for determining a three-dimensional image of an animal, or other symmetric object, by projecting a pattern of light on the object and capturing two images of the reflected light with two cameras located a fixed distance apart. Using triangulation, the x, y, and z locations of each element o

A system for determining a three-dimensional image of an animal, or other symmetric object, by projecting a pattern of light on the object and capturing two images of the reflected light with two cameras located a fixed distance apart. Using triangulation, the x, y, and z locations of each element of the light pattern is measured, thus creating a three-dimensional image of the surface of the object. Because animals are symmetric, an image need only be taken of one side of the animal, and the image mirrored, to determine the complete three dimensional characteristics of the animal. factors including irregularities in a contact surface of the mask in contact with a support member arid/or irregularities in a contact surface of the support member in contact with the mask. 6. A projection exposure method according to claim 5, wherein the first step comprises: measuring the irregularities and then storing them; obtaining a surface shape of the pattern bearing surface of the mask when the mask is supported on the supporting member by vacuum suction, based on the stored irregularities by the first step; and obtaining a displacement amount of the projected image of the pattern formed on the pattern-bearing surface of the mask, based on the surface shape obtained in the second step. 7. A projection exposure method according to claim 6, wherein the exposure method comprises a scanning exposure method for exposing the substrate with the pattern formed on the pattern-bearing surface of the mask by moving the mask and the substrate in synchronization with each other; and the step of obtaining a surface shape of the pattern-bearing surface of the mask includes the step of obtaining variations of the irregularities in a scanning direction of the mask when the mask is supported by the supporting member based on the irregularities stored in the first step. 8. A projection exposure method according to claim 2, wherein the second step comprises the steps of: using a distortion evaluation mask having evaluation patterns formed thereon in order to measure the positions of projected images of the evaluation patterns, and to determine the distortion actually produced by the projection optical system; measuring a surface shape of the distortion evaluation mask, and deriving a distribution of expected displacements of projected images of the evaluation patterns from their desired projection positions; and compensating the measurements of the distortion with the expected displacements so as to derive a distortion produced solely by the projection optical system which is free from any effects of the surface shape of the mask. 9. A projection exposure method according to claim 2, wherein the fourth step is carried out by adjusting a relative distance between the mask and the substrate in an optical axis direction of the projection optical system. 10. A projection-optical method according to claim 9, wherein the adjustment of the distance is carried out by adjusting the support member in the optical axis direction. 11. A projection exposure method according to claim 2, wherein the fourth step is carried out by adjusting a relative distance between lenses disposed in the projection optical system. 12. A projection exposure method according to claim 2, wherein the fourth step comprises the step of scanning exposing the substrate with the pattern formed on the mask by moving the mask and the substrate in synchronization with teach other while partially correcting the position at which the image of the pattern of the mask is formed through the projection optical system, based on the total expected distortion. 13. A method of manufacturing a device including exposing a substrate with a pattern formed on a mask using the projection exposure method defined in claim 12. 14. A projection exposure method for exposing a substrate through a projection optical system with a pattern image formed on a pattern-bearing surface of a mask, comprising: a first step of determining a distortion produced solely by the projection optical system; a second step of obtaining a total expected distortion by a summation of the distortion produced solely by the projection optical system and an amount of lateral variation of the pattern image, caused by a self-weight of the mask; and a third step of exposing the substrate with the pattern image while partially correcting the position at which the pattern image of the mask is formed through the projection optical system based on the total expected distortion.