초록 ▼

An apparatus usable in a subterranean well includes a valve, a first mechanism and a second mechanism. The valve controls communication between an annular region that surrounds the valve and an inner passageway of the valve. The first mechanism causes the valve to transition from a first state to a

An apparatus usable in a subterranean well includes a valve, a first mechanism and a second mechanism. The valve controls communication between an annular region that surrounds the valve and an inner passageway of the valve. The first mechanism causes the valve to transition from a first state to a second state in response to pressure in the annular region. The second mechanism causes the valve to transition between the first state and the second state in response to a pressure differential between the annular region and the inner passageway.

대표청구항 ▼

An apparatus usable in a subterranean well includes a valve, a first mechanism and a second mechanism. The valve controls communication between an annular region that surrounds the valve and an inner passageway of the valve. The first mechanism causes the valve to transition from a first state to a

An apparatus usable in a subterranean well includes a valve, a first mechanism and a second mechanism. The valve controls communication between an annular region that surrounds the valve and an inner passageway of the valve. The first mechanism causes the valve to transition from a first state to a second state in response to pressure in the annular region. The second mechanism causes the valve to transition between the first state and the second state in response to a pressure differential between the annular region and the inner passageway. a wiring shunt line in parallel therewith, and wherein said power control circuit is programmed with a conductive line to or from said at least one voltage boost circuit or said wiring shunt line in parallel therewith being open circuited. 6. The thermal dissipation assembly of claim 5, wherein said at least one voltage boost circuit comprises multiple voltage boost circuits connected in series between said given power source and said thermoelectric elements, each voltage boost circuit having a wiring shunt line in parallel therewith, and wherein said power control circuit is programmed with a conductive line to or from each voltage boost circuit or said wiring shunt line in parallel therewith being open circuited. 7. An electronic circuit comprising: an electronic device; a thermal dissipation assembly comprising: a thermoelectric assembly thermally coupled to the electronic device for removing heat generated thereby; and a statically tailorable power control circuit integrated with said thermoelectric assembly, wherein said statically tailorable power control circuit allows cooling capacity of said thermoelectric assembly to be initially tailored to anticipated heat dissipation of the electronic device by selecting, for a given power source, a voltage level to the thermoelectric elements of the thermoelectric assembly from a plurality of selectable voltage levels. 8. The electronic circuit of claim 7, wherein said electronic circuit comprises an electronic module having a substrate and a thermally conductive cap, and wherein said electronic device is mounted to said substrate and said thermal dissipation assembly is disposed between said electronic device and said thermally conductive cap. 9. The electronic circuit of claim 7, wherein said given power source comprises a power plane within said substrate of said electronic module, and said thermoelectric assembly is wired to said substrate and electrically connected to said power plane therein. 10. The electronic circuit of claim 7, wherein said thermoelectric assembly comprises a first support plate and a second support plate each of which comprises a semiconductor material and wherein said power control circuit comprises an integrated circuit formed on or within at least one of said first support plate and second support plate. 11. The electronic circuit of claim 7, wherein said electronic device comprises an integrated circuit chip, and wherein said thermoelectric assembly is attached to said integrated circuit chip by solder or a thermal epoxy. 12. An electronic circuit comprising: an electronic device; a thermal dissipation assembly comprising: a thermoelectric assembly thermally coupled to the electronic device for removing heat generated thereby; a programmable power control circuit integrated with said thermoelectric assembly, wherein said programmable power control circuit allows cooling capacity of said thermoelectric assembly to be tailored to anticipated heat dissipation of the electronic device by adjusting, for a given power source, voltage level to thermoelectric elements of the thermoelectric assembly; and wherein said programmable power control circuit comprises at least one voltage boost circuit connected in series between said given power source and said thermoelectric elements, each voltage boost circuit having a wiring shunt line in parallel therewith, and wherein said power control circuit is programmed with a conductive line to or from said at least one voltage boost circuit or said wiring shunt line in parallel therewith being open circuited. 13. A multi-chip module comprising: multiple electronic devices, at least some electronic devices of the multiple electronic devices having different anticipated heat dissipation capabilities; multiple thermal dissipation assemblies, each thermal dissipation assembly being associated with a different electronic device of said multiple electronic devices, and wherein each thermal dissip