IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0455374
(1995-05-31)
|
발명자
/ 주소 |
- Glaug, Frank Steven
- Kato, Margaret Ann
|
출원인 / 주소 |
- Kimberly-Clark Worldwide, Inc.
|
대리인 / 주소 |
Brinks Hofer Gilson & Lione
|
인용정보 |
피인용 횟수 :
60 인용 특허 :
27 |
초록
The present invention provides a process of making a child's disposable absorbent training pant having a unitary waist elastic system that provides a substantially uniform low tension over a wide size range, a more comfortable fit, and improved ease of use.
대표청구항
▼
The present invention provides a process of making a child's disposable absorbent training pant having a unitary waist elastic system that provides a substantially uniform low tension over a wide size range, a more comfortable fit, and improved ease of use. m 1, wherein the gas feed means comprise a
The present invention provides a process of making a child's disposable absorbent training pant having a unitary waist elastic system that provides a substantially uniform low tension over a wide size range, a more comfortable fit, and improved ease of use. m 1, wherein the gas feed means comprise an inert gas source. 9. An apparatus according to claim 8, wherein the inert gas source contains nitrogen. 10. An apparatus according to claim 1, wherein the gas feed channels for the gas bearing are connected to an inert gas source. 11. An apparatus according to claim 10 wherein the inert gas source contains nitrogen. 12. An apparatus for treating a wafer manufactured from semiconducting material, the apparatus comprising a first and a second housing part arranged for movement away from and towards each other, the two housing parts in a closed position, moved together, bounding a treatment chamber, at least one gas feed channel being provided in the first and/or second housing part which opens into the treatment chamber, the first and the second housing part around the treatment chamber being provided with a first and second boundary surface respectively, while in the closed position a gap is present between the first and the second boundary surface for discharging the gas fed into the treatment chamber in radially outward direction, wherein in at least one of the two boundary surfaces, there is provided a first groove connected to gas discharge means, while in at least one of the two boundary surfaces, there is provided a second groove connected to gas feed means, both the first and the second groove extending substantially along the circumference of the treatment chamber, the first groove being located radially within the second groove, and, in use, the pressure created by the gas feed means being such that from the second groove, gas flows both in radial inward and in radial outward direction in the gap between the first and the second boundary surface, the two housing parts in an open, moved-apart position keeping clear an interspace between the first and the second boundary surface for loading and unloading the wafer by means of wafer transport means, wherein at least one of the two boundary surfaces of one of the two housing parts is provided with a number of wafer transport means receiving grooves which incorporate the wafer transport means when the two housing parts are in the closed position. 13. An apparatus according to claim 12, wherein the wafer transport means receiving grooves extend in radial direction, the second groove being interrupted at the location of each water transport means receiving groove. 14. An apparatus according to claim 13, wherein gas feed, means open into the wafer transport means receiving grooves, the wafer transport means receiving grooves at a radially inwardly located part being in fluid connection with the first grooves. 15. An apparatus according to claim 12, wherein the first and the second housing part, in operation, have a substantially constant temperature, while in the closed position of the two housing parts, the distance between the wafer enclosed in the treatment space and the two housing parts is so small that the heat transfer between the two housing parts and the wafer is substantially effected by heat conduction. 16. An apparatus according to claim 12, wherein the gas feed means comprise an inert gas source. 17. An apparatus according to claim 12, wherein the gas teed channels for the gas bearing are connected to an inert gas source. 18. An apparatus for treating a wafer manufactured from semiconducting material, the apparatus comprising a first and a second housing part arranged for movement away from and towards each other, the two housing parts in a closed position, moved together, bounding a treatment chamber, at least one gas feed channel being provided in the first and/or second housing part which opens into the treatment chamber, the first and the second housing part around the treatment chanter being provided with a first and second boundary surface respectively, while in the closed position a gap is present between the first and the second boundary surface for discharging the gas fed into the treatment chamber in radially o
※ AI-Helper는 부적절한 답변을 할 수 있습니다.