초록 ▼

Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer wit

Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.

대표청구항 ▼

Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer wit

Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure. e at all diameters of said inner surface, such that said target may be passed axially entirely through said cathode; and c) means operative between said target and said cathode for positioning and retaining said target axially within said cathode, said means including a groove in said inner surface of said cathode, a first resilient element disposed in said groove and extending resiliently inwards of said inner surface, and a step formed in said outer surface of said target at an end thereof for receiving said resilient element to position and support said target axially within said cathode. 9. A cylindrical magnetron assembly in accordance with claim 8 wherein outer diameters of said cylindrical targets are identical and wherein inner diameters of said cylindrical cathodes are identical and greater than said outer diameters of said cylindrical targets. 10. A cylindrical magnetron assembly in accordance with claim 8 wherein all of said plurality of cylindrical targets are insertable into and removable from said plurality of cylindrical cathodes from one end of said magnetron assembly.