초록 ▼

A bond pad structure for use in wire bonding application during the packaging operation of semiconductor devices which contains a bond frame structure for holding the bond pad in place to prevent bond pad peel-off problem. The bond pad structure is a laminated structure containing a metal bond pad l

A bond pad structure for use in wire bonding application during the packaging operation of semiconductor devices which contains a bond frame structure for holding the bond pad in place to prevent bond pad peel-off problem. The bond pad structure is a laminated structure containing a metal bond pad layer, a middle dielectric layer, and an underlying layer formed above a wafer surface. A guard band structure is formed in a spaced apart relationship from the metal bond pad layer which is connected to the underlying layer by a hole-fill. The underlying layer can be a metal layer, a semiconductor layer such as a polysilicon layer, or any material layer which has good adhesion with the hole fill material. The guard band structure exerts a downward force against the middle dielectric layer to help keeping the middle dielectric layer in place. The guard band structure also creates a localized discontinuity in the middle dielectric layer to intercept cracks that may be formed in the middle layer around the edge of the metal bond pad which is believed a main cause of bond pad peel-off problem.

대표청구항 ▼

1. A method for fabricating a bond pad structure for use in an integrated circuit comprising the steps of: (a) forming an underlying layer on a wafer surface; (b) forming a middle dielectric layer on top of said underlying layer, said middle dielectric layer containing a first through-hole forme

1. A method for fabricating a bond pad structure for use in an integrated circuit comprising the steps of: (a) forming an underlying layer on a wafer surface; (b) forming a middle dielectric layer on top of said underlying layer, said middle dielectric layer containing a first through-hole formed above said underlying layer; (c) filling said first through-hole to form a hole fill; (d) forming a top dielectric layer on top of said middle dielectric layer, said top dielectric layer containing a third through-hole immediately above said first through-hole, and a second through-hole which is spaced apart from said third through-hole, wherein said third through-hole is greater in cross-sectional area than said first through-hole and said second through-hole is substantially greater in cross-sectional area than said third through-hole; (e) filling said second through-hole and said third through-hole to form a bond pad and a band element, respectively; (f) where said band element is not connected to said bond pad, and said third through-hole is disposed in a close proximity to said second through-hole such that said band element is effective in intercepting crack that forms when said bond pad is under a stress. 2. The method for fabricating a bond pad structure according to claim 1, wherein said underlying layer is a metal layer or a polysilicon layer. 3. The method for fabricating a bond pad structure according to claim 1, wherein said underlying layer is a polysilicon layer. 4. The method for fabricating a bond pad structure according to claim 1 which further comprises the step of forming an anchoring structure inside said middle dielectric layer which will connect between said bond pad and said underlying layer. 5. The method for fabricating a bond pad structure according to claim 1, wherein said band element has a horizontally elongated structure containing one or more line segments along one or more edges, respectively, of said bond pad. 6. The method for fabricating a bond pad structure according to claim 5, wherein said band element and said bond pad have a matching teethed structure at their respectively opposing sides. 7. The method for fabricating a bond pad structure according to claim 5, wherein said band element and said bond pad have an interlocking keyed structure at their respectively opposing sides. 8. The method for fabricating a bond pad structure according to claim 1, wherein said bond pad structure is formed to contain a plurality of rows of hole fills corresponding to each said band element. 9. The method for fabricating a bond pad structure according to claim 1, wherein said first through-hole is filled by a tungsten plug.