초록 ▼

A burn through resistant nonwoven mat and cover film composite for use in a thermal and/or acoustical insulation blanket system, are, preferably, made up of non-respirable and/or biosoluble base fibers and capable of retaining their integrity and dimensional stability during 4 minutes of exposure to

A burn through resistant nonwoven mat and cover film composite for use in a thermal and/or acoustical insulation blanket system, are, preferably, made up of non-respirable and/or biosoluble base fibers and capable of retaining their integrity and dimensional stability during 4 minutes of exposure to a fluctuating high pressure flame front at a temperature of 1100° C. examples of non-respirable base fibers which make up the nonwoven mat are quartz fibers; aluminosilicate, aluminoborosilicate or alumina ceramic oxide fibers; partially oxidized pitch based fibers; and partially oxidized polyacrylonitrile fibers having mean diameters greater than 6 microns. Examples of biosoluble fibers are biosoluble glass fibers. Preferably, the nonwoven mats also include a lubricant sizing with a water repellent additive.

대표청구항 ▼

A burn through resistant nonwoven mat and cover film composite for use in a thermal and/or acoustical insulation blanket system, are, preferably, made up of non-respirable and/or biosoluble base fibers and capable of retaining their integrity and dimensional stability during 4 minutes of exposure to

A burn through resistant nonwoven mat and cover film composite for use in a thermal and/or acoustical insulation blanket system, are, preferably, made up of non-respirable and/or biosoluble base fibers and capable of retaining their integrity and dimensional stability during 4 minutes of exposure to a fluctuating high pressure flame front at a temperature of 1100° C. examples of non-respirable base fibers which make up the nonwoven mat are quartz fibers; aluminosilicate, aluminoborosilicate or alumina ceramic oxide fibers; partially oxidized pitch based fibers; and partially oxidized polyacrylonitrile fibers having mean diameters greater than 6 microns. Examples of biosoluble fibers are biosoluble glass fibers. Preferably, the nonwoven mats also include a lubricant sizing with a water repellent additive. al.; US-6200851, 20010300, Arnold et al.; US-6277763, 20010800, Kugimiya et al., 438/720; US-20010005622, 20010600, Kim et al., 438/592 omprises polysilicon. 13. The method of claim 11, wherein said substrate comprises glass and said silicon-containing gate layer comprises amorphous silicon. 14. The method of claim 5, wherein said gate dielectric layer comprises silicon oxide. 15. The method of claim 5, wherein said first source gas comprises at least one etchant gas selected from the group consisting of a fluorine-comprising gas, a chlorine-comprising gas, and a bromine-comprising gas, and at least one passivating gas selected from the group consisting of N2,O2,and HBr. 16. The method of claim 15, wherein said first source gas comprises CF4,Cl2,and N2. 17. The method of claim 16, wherein said first source gas comprises about 50 to about 80 volume % CF4,about 10 to about 40 volume % Cl2,and about 10 to about 40 volume % N2. 18. The method of claim 15, wherein said first source gas comprises CF4,HBr, Cl2,and He/O2. 19. The method of claim 18, wherein said first source gas comprises about 10 to about 20 volume % CF4,about 40 to about 80 volume %, HBr, about 30 to about 60 volume % Cl2,and about 5 to about 10 volume % He/O2. 20. The method of claim 15, wherein said first source gas comprises HBr, Cl2,and He/O2. 21. The method of claim 20, wherein said first source gas comprises about 40 to about 80 volume %, HBr, about 30 to about 70 volume % Cl2,and about 5 to about 10 volume % He/O2. 22. The method of claim 1, wherein a substrate bias power applied during step b) is at least about 60 W. 23. The method of claim 22, wherein said substrate bias power is at least about 80 W. 24. The method of claim 23, wherein a substrate bias voltage applied during step b) is at least about -100 V. 25. The method of claim 1, wherein said second source gas provides a selectivity for etching said silicon-containing gate layer relative to said gate dielectric layer of at least 20:1. 26. The method of claim 14, wherein second source gas comprises a bromine-comprising gas, a chlorine-comprising gas, and an oxygen-comprising gas. 27. The method of claim 26, wherein said second source gas comprises HBr, Cl2,and He/O2. 28. The method of claim 27, wherein said second source gas comprises about 70 to about 90 volume % HBr, about 5 to about 20 volume % Cl2,and about 2 to about 10 volume % He/O2,wherein O2comprises about 30 volume % of the He/O2mixture. 29. The method of claim 14, wherein said third source gas comprises a bromine-comprising gas, a chlorine-comprising gas, N2,and an oxygen-comprising gas. 30. The method of claim 29, wherein said third source gas comprises HBr, Cl2,N2,and He/O2. 31. The method of claim 30, wherein said third source gas comprises about 70 to about 90 volume % HBr, about 5 to about 20 volume % Cl2,about 2 to about 10 volume % N2,and about 2 to about 10 volume % He/O2,wherein O2comprises about 30 volume % of the He/O2mixture. 32. The method of claim 1, wherein said fourth source gas provides a selectivity for etching said silicon-containing gate layer relative to said gate dielectric layer of at least 20:1. 33. The method of claim 14, wherein said fourth source gas provides a selectivity for etching said silicon-containing gate layer relative to said gate dielectric layer of at least 100:1. 34. The method of claim 14, wherein said fourth source gas comprises a bromine-comprising gas, a chlorine-comprising gas, and an oxygen-comprising gas. 35. The method of claim 34, wherein said fourth source gas comprises HBr, Cl2,and He/O2. 36. The method of claim 35, wherein said fourth source gas comprises about 70 to about 90 volume % HBr, about 5 to about 20 volume % Cl2,and about 2 to about 10 volume % He/O2,wherein O2comprises about 30 volume % of the He/O2mixture. 37. The method of claim 1, wherein said second source gas and said fourth source gas do not contain a passivating gas. 38. The method of claim 1, wherein a substrate bias power applied during steps c), d), and e) is about 80% or less of a substrate bias power applied during step b). 39. The method of claim 38, wherein said substrate bias power applied during steps c), d), and e) is within the range of about 50% to about 75% of a substrate bias power applied during step b). 40. The method of claim 23, wherein a substrate bias power applied during steps c), d), and e) is within the range of about 40 W to about 50 W. 41. The method of claim 1, wherein a height to width ratio for said notch ranges from about 1:1 to about 10:1. 42. The method of claim 1, wherein said notched silicon-containing gate structure is T-shaped. 43. A method of controlling a line width at the base of a silicon-containing gate structure, said method comprising the steps of: a) providing an etch stack including, from top to bottom, a patterned masking layer, a silicon-containing gate layer, a gate dielectric layer, and an underlying substrate; b) etching said silicon-containing gate layer to a first desired depth using a plasma generated from a first source gas, to form a first passivation layer on sidewalls of said silicon-containing gate layer which are exposed during etching, whereby upper silicon-containing gate layer sidewalls are protected from etching during subsequent etching steps; c) etching the remaining portion of said silicon-containing gate layer using a plasma generated from a second source gas which selectively etches said silicon-containing gate layer relative to said gate dielectric layer, to form a lower sidewall of said silicon-containing gate layer, including a gate line width at an upper surface of said gate dielectric layer; d) exposing said etch stack to a plasma generated from a third source gas which includes nitrogen, to form a second, nitrogen-containing passivation layer on exposed sidewalls of said silicon-containing gate layer; and e) etching a notch in said lower sidewall of said silicon-containing gate layer which is not protected by said first passivation layer using a plasma generated from a fourth source gas which selectively etches said silicon-containing gate layer relative to said gate dielectric layer, whereby the final line width of said silicon-containing gate structure is controlled. 44. The method of claim 43, wherein said silicon-containing gate layer comprises a material selected from the group consisting of polysilicon and amorphous silicon. 45. The method of claim 44, wherein said silicon-containing gate layer material includes a dopant. 46. The method of claim 43, wherein said gate dielectric layer comprises an inorganic oxide. 47. The method of claim 46, wherein said inorganic oxide is selected from the group consisting of silicon oxide, silicon oxynitride, and tantalum pentoxide. 48. The method of claim 43, wherein said gate dielectric layer comprises an organic dielectric material. 49. The method of claim 43, wherein said substrate comprises a material selected from the group consisting of silicon, silicon-on-insulator (SOI), and glass. 50. The method of claim 49, wherein said substrate comprises silicon and said silicon-comprising gate layer comprises polysilicon. 51. The method of claim 49, wherein said substrate comprises glass and said silicon-containing gate layer comprises amorphous silicon. 52. The method of claim 44, wherein said gate dielectric layer comprises silicon oxide. 53. The method of claim 44, wherein said first source gas comprises at least one etchant gas selected from the group consisting of a fluorine-comprising gas, a chlorine-comprising gas, and a bromine-comprising gas, and at least one passivating gas selected from the group consisting of N2,O