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A composition and method for use in imparting or maintaining a glossy or shiny finish on a hard surface. In one embodiment, the composition comprises a base polish component or components, and at least one poly[oxyalkylene] ammonium cationic surfactant. In another embodiment, a method of imparting a

A composition and method for use in imparting or maintaining a glossy or shiny finish on a hard surface. In one embodiment, the composition comprises a base polish component or components, and at least one poly[oxyalkylene] ammonium cationic surfactant. In another embodiment, a method of imparting a glossy finish on a hard surface by applying a composition to the hard surface, the composition comprising at least one poly[oxyalkylene] ammonium cationic surfactant In some such embodiments, the composition comprises a base polish and the poly[oxyalkylene] ammonium cationic surfactant is dispersed in the base polish. Preferably, the poly[oxyalkylene] ammonium cationic surfactant comprises in the range of about 0.01 to about 10 wt. %, more preferably in the range of about 0.05 to about 5 wt. %, and more preferably in the range of about 0.1 to about 1 wt. % of the total composition.

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A composition and method for use in imparting or maintaining a glossy or shiny finish on a hard surface. In one embodiment, the composition comprises a base polish component or components, and at least one poly[oxyalkylene] ammonium cationic surfactant. In another embodiment, a method of imparting a

A composition and method for use in imparting or maintaining a glossy or shiny finish on a hard surface. In one embodiment, the composition comprises a base polish component or components, and at least one poly[oxyalkylene] ammonium cationic surfactant. In another embodiment, a method of imparting a glossy finish on a hard surface by applying a composition to the hard surface, the composition comprising at least one poly[oxyalkylene] ammonium cationic surfactant In some such embodiments, the composition comprises a base polish and the poly[oxyalkylene] ammonium cationic surfactant is dispersed in the base polish. Preferably, the poly[oxyalkylene] ammonium cationic surfactant comprises in the range of about 0.01 to about 10 wt. %, more preferably in the range of about 0.05 to about 5 wt. %, and more preferably in the range of about 0.1 to about 1 wt. % of the total composition. mpound; passing the plasma along a conduit after the plasma has been generated; injecting a third gas into the conduit to form a mixture species from the plasma and the third gas; and passing the mixture species from the conduit into the process chamber away from where the plasma has been generated so as to etch the object in the process chamber with the mixture species, whereupon the object is substantially free from physical surface damage; wherein the NH3is provided at a concentration below an explosion limit defined at 1 atmosphere pressure. 2. The method of claim 1 wherein said object is a semiconductor wafer having a layer of oxide and the method comprises substantially maintaining the layer of oxide on the semiconductor wafer. 3. The method of claim 1 wherein said mixture species comprises atomic hydrogen. 4. The method of claim 1 wherein said method occurs in an apparatus not having a load lock module. 5. The method of claim 1 wherein the gas comprising an element in group 18 of the atomic periodic table is selected from the group consisting of helium, neon, argon, krypton, xenon, and radon. 6. The method of claim 1 wherein the compound comprising a nitrogen bearing compound is selected from the group consisting of N2and NF3. 7. The method of claim 1 wherein said plasma is generated by a microwave source. 8. The method of claim 1 wherein said plasma is generated in a microwave cavity. 9. The method of claim 1 which further comprises increasing a temperature of the mixture species to up to 500 degrees Celsius. 10. A method of treating an object, the method comprising: positioning the object to be treated including etching in a treatment room; generating a plasma in a plasma discharge room from a gas A the gas A comprising a nitrogen bearing compound, and a gas-B, the gas B comprising NH3; passing the plasma from the plasma discharge room to the treatment room; injecting a gas D into the plasma at a location between the plasma discharge room and the treatment room through a nozzle so as to form a mixture of said plasma and said gas D; and introducing the mixture into the treatment room so as to etch the object in the treatment room with a mixture species generated from the plasma and said gas D, whereupon the object is substantially free from physical surface damage; wherein the NH3is provided at a concentration below an explosion limit defined at 1 atmosphere pressure. 11. The method of claim 10 wherein said gas D is selected from the group consisting of silane, alcohol, and NF3. 12. The method of claim 10 wherein said mixture species comprises atomic hydrogen. 13. The method of claim 10 wherein said method occurs in an apparatus not having a load lock module. 14. The method of claim 10 wherein said nitrogen bearing compound is selected from the group consisting of N2and NF3. 15. The method of claim 10 wherein said plasma is generated by a microwave source. 16. The method of claim 10 wherein said plasma is generated in a microwave cavity. 17. The method of claim 10 further comprising increasing a temperature of the mixture species to up to 500 degrees Celsius. 18. A method of treating an object, the method comprising: positioning the object to be treated using an etching process in a process chamber, the object including an overlying thin layer of silicon dioxide overlying a surface on the object; generating a plasma from a gas mixture comprising a first gas, the first gas being selected from the group consisting of a nitrogen bearing compound and at least an element in group 18 of the atomic periodic table, and a second gas, the second gas comprising an NH3bearing compound; passing the plasma along a conduit after the plasma has been generated; injecting a third gas into the conduit to form a mixture species from the plasma and the third gas; passing the mixture species from the conduit into the pro cess chamber away from where the plasma has been generated; applying atomic hydrogen in the mixture species to the surface of the object to process the surface of the object; removing the thin surface of silicon dioxide from the surface of the object with the mixture species including the atomic hydrogen, whereupon the surface of the object is substantially free from physical surface damage; wherein the NH3is provided at a concentration below an explosion limit defined at 1 atmosphere pressure. 19. The method of claim 18 wherein said method occurs in an apparatus not having a load lock module. 20. The method of claim 18 wherein the gas comprising an element in group 18 of the atomic periodic table is selected from the group consisting of helium, neon, argon, krypton, xenon, and radon. 21. The method of claim 18 wherein the compound comprising a nitrogen bearing compound is selected from the group consisting of N2and NF3. 22. The method of claim 18 wherein said plasma is generated by a microwave source. 23. The method of claim 18 wherein said plasma is generated in a microwave cavity. 24. The method of claim 18 which further comprises increasing a temperature of the mixture species to up to 500 degrees Celsius.