Method and apparatus for performing mobile station assisted hard handoff using error correction codes
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H04B-003/46
H04L-027/06
H04Q-007/20
출원번호
US-0075407
(1998-05-07)
발명자
/ 주소
Chen, Tao
Tiedemann, Jr., Edward G.
Saints, Keith W.
출원인 / 주소
Qualcomm Incorporated
대리인 / 주소
Wadsworth, Philip R.Baker, Kent D.Greenhaus, Bruce W.
인용정보
피인용 횟수 :
17인용 특허 :
9
초록▼
A method and apparatus for minimizing the amount of time that a mobile station is to be out of communication with an "origination" base station while searching for a suitable system to which to perform a mobile station assisted hard handoff. After being directed to search for pilot signals in an alt
A method and apparatus for minimizing the amount of time that a mobile station is to be out of communication with an "origination" base station while searching for a suitable system to which to perform a mobile station assisted hard handoff. After being directed to search for pilot signals in an alternate frequency band, the mobile station tunes to that alternate frequency and samples the incoming data, storing those samples in memory. When a sufficient number of samples have been stored, the mobile station retunes to the origination frequency. The forward link data is again received by the mobile station, and reverse link data can be successfully transmitted to the origination base station. After retuning to the origination frequency, a searcher in the mobile station will subsequently be employed to search for pilot signal offsets utilizing the stored data collected from the alternate frequency.
대표청구항▼
A method and apparatus for minimizing the amount of time that a mobile station is to be out of communication with an "origination" base station while searching for a suitable system to which to perform a mobile station assisted hard handoff. After being directed to search for pilot signals in an alt
A method and apparatus for minimizing the amount of time that a mobile station is to be out of communication with an "origination" base station while searching for a suitable system to which to perform a mobile station assisted hard handoff. After being directed to search for pilot signals in an alternate frequency band, the mobile station tunes to that alternate frequency and samples the incoming data, storing those samples in memory. When a sufficient number of samples have been stored, the mobile station retunes to the origination frequency. The forward link data is again received by the mobile station, and reverse link data can be successfully transmitted to the origination base station. After retuning to the origination frequency, a searcher in the mobile station will subsequently be employed to search for pilot signal offsets utilizing the stored data collected from the alternate frequency. vol. 32, No. 19 (Sep. 12, 1996); 1784-1786. Yang, Gye Mo, MacDougal, Michael H., and Dapkus, P. Daniel--"Effects of current spreading under oxide current aperture in vertical-cavity surface-emitting lasers," J. Appl .Phys. vol. 80, No. 9(Nov. 1, 1996); 4837-4840. Oh, T.H., Huffaker, D.L., and Deppe, D.G.--Size effects in small oxide confined vertical-cavity surface-emitting lasers,: Appl .Phys. Lett. vol. 69 No. 21 (Nov. 18, 1996); 3152-3154. Y.H. Lee et al--"Top Surface Emitting GaAs Four-Quantum-Well Lasers Emitting AT 0.85um" Electronics Letters vol. 26, No. 11 (1990) 710-711. Huffaker, D.L. Shin, J. and Deppe, D,G, et al--"Improved Mode Stability in Low Threshold Single Quantum Well Native-Oxide Defined Vertical-Cavity Lasers", Appl. Phys Lett. 65 (Nov. 21, 1994); 2642-2644. Huffaker, D.L. Shin, J. and Deppe, D.G.--"Low Threshold Half-Wave Vertical-Cavity Lasers", Electron. Lett. 30, (Nov., 10, 1994); 1946-1947. Choquette,K.D., Schneider, R.P., Lear, K.L., et al--"Low Threshold voltage vertical-cavity lasers fabricated by selective oxidation," Electronics Letters vol. 30, No. 24 (Nov. 24, 1994) 2043-2044. MacDougal, M. H., et al--"Ultralow Threshold Current Vertical-Cavity Surface-Emitting Lasers with AlAs-oxide-GaAs Distributed Bragg Reflectors," IEEE photonics Technology Lett. vol.; 7 (Mar. 1995); 229-231. Hayashi, Y. Mukaihara, T., Hatori, N., et al--"Record low-threshold index guided InGaAs/GaAlAs vertical-cavity surface emitting laser with a native oxide confinement structure," Electronics Letters vol. 31, No. 7 (Mar. 30, 1995); 560-562. Lear, K.L., Choquette, K.D., Schneider, R.P., et al--"Modal analysis of a small surface emitting laser with a selectively oxidzed waveguide," Appl. Phys. Lett. vol. 66, No. 20 (May 15, 1995); 2616-2618. Yang, G.M., MacDougal, M.H., and Dapkus, P.D.- "Ultralow threshold current-vertical cavity surface-emitting lasers obtained with selective oxidation," Electronics Letters vol. 31, No. 11 (M
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