초록 ▼

A method for determining end-point in a chamber cleaning process is disclosed which can be carried out by first providing a chamber that has a cavity for conducting a semiconductor fabrication process therein, then mounting a crystal sensor on a surface of the chamber cavity at a position that the s

A method for determining end-point in a chamber cleaning process is disclosed which can be carried out by first providing a chamber that has a cavity for conducting a semiconductor fabrication process therein, then mounting a crystal sensor on a surface of the chamber cavity at a position that the sensor is exposed to gases or liquids or generated by the fabrication process; conducting a semiconductor fabrication process in the chamber; flowing a cleaning fluid into and in-situ cleaning the surface of the chamber cavity; inputting an oscillating frequency into the crystal sensor and monitoring an output frequency of oscillation from the sensor; and comparing the output frequency of oscillation to an output frequency from a crystal sensor that has a clean surface and determining when the surface of the chamber cavity is cleaned.

대표청구항 ▼

A method for determining end-point in a chamber cleaning process is disclosed which can be carried out by first providing a chamber that has a cavity for conducting a semiconductor fabrication process therein, then mounting a crystal sensor on a surface of the chamber cavity at a position that the s

A method for determining end-point in a chamber cleaning process is disclosed which can be carried out by first providing a chamber that has a cavity for conducting a semiconductor fabrication process therein, then mounting a crystal sensor on a surface of the chamber cavity at a position that the sensor is exposed to gases or liquids or generated by the fabrication process; conducting a semiconductor fabrication process in the chamber; flowing a cleaning fluid into and in-situ cleaning the surface of the chamber cavity; inputting an oscillating frequency into the crystal sensor and monitoring an output frequency of oscillation from the sensor; and comparing the output frequency of oscillation to an output frequency from a crystal sensor that has a clean surface and determining when the surface of the chamber cavity is cleaned. Tsai, 340/468; US-5304980, 19940400, Maekawa, 340/903; US-5307136, 19940400, Saneyoshi, 180/167; US-5314037, 19940500, Shaw et al., 180/169; US-5327117, 19940700, Kohsaka, 340/459; US-5332057, 19940700, Butsuen et al., 180/169; US-5339075, 19940800, Abst et al., 340/903; US-5341344, 19940800, O'Brien et al., 367/096; US-5357438, 19941000, Davidian, 180/169; US-5369591, 19941100, Broxmeyer, 340/903; US-5545960, 19960800, Ishikawa, 364/424.032