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In a TFT using a crystalline semiconductor film of a bottom gate type, a gate insulating film is flattened. On a substrate, an underlying film, a gate wiring and a gate insulating film are accumulated in this order. The gate insulating film includes a flattening film including an insulating organic

In a TFT using a crystalline semiconductor film of a bottom gate type, a gate insulating film is flattened. On a substrate, an underlying film, a gate wiring and a gate insulating film are accumulated in this order. The gate insulating film includes a flattening film including an insulating organic resin film, such as BCB, polyimide and acrylic, and an insulating inorganic film. Because the surface of the gate insulating film is flattened by the flattening film, a flat amorphous semiconductor film can be formed on the surface thereof. Therefore, in the laser crystallization, since no difference in focal point of the laser light is formed among each position of the semiconductor film, crystallization can be uniformly conducted. Because the edge part of the gate wiring can be covered with the thick flattening film, implantation of an electron or a hole to the gate insulating film, and electrostatic breakage of the gate insulating film can be prevented.

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In a TFT using a crystalline semiconductor film of a bottom gate type, a gate insulating film is flattened. On a substrate, an underlying film, a gate wiring and a gate insulating film are accumulated in this order. The gate insulating film includes a flattening film including an insulating organic

In a TFT using a crystalline semiconductor film of a bottom gate type, a gate insulating film is flattened. On a substrate, an underlying film, a gate wiring and a gate insulating film are accumulated in this order. The gate insulating film includes a flattening film including an insulating organic resin film, such as BCB, polyimide and acrylic, and an insulating inorganic film. Because the surface of the gate insulating film is flattened by the flattening film, a flat amorphous semiconductor film can be formed on the surface thereof. Therefore, in the laser crystallization, since no difference in focal point of the laser light is formed among each position of the semiconductor film, crystallization can be uniformly conducted. Because the edge part of the gate wiring can be covered with the thick flattening film, implantation of an electron or a hole to the gate insulating film, and electrostatic breakage of the gate insulating film can be prevented. apacitor of a semiconductor device according to claim 1 wherein the steps of curing and crystallizing are performed at a pressure in the process chamber of about 300 Torr or less. 4. The method of manufacturing a capacitor of a semiconductor device according to claim 1 wherein the step of curing is performed at a lesser pressure than is used in the step of crystallizing. 5. The method of manufacturing a capacitor of a semiconductor device according to claim 1 wherein the steps of curing and crystallizing are performed at the same pressure. 6. The method of manufacturing a capacitor of a semiconductor device according to claim 1, wherein the step of curing is performed in an O3or UV--O3atmosphere. 7. The method of manufacturing a capacitor of a semiconductor device according to claim 1, wherein the step of crystallizing is performed in an atmosphere comprising at least one of O2,N2O, N2,Ar and He. 8. The method of manufacturing a capacitor of a semiconductor device according to claim 1, wherein movement of the pins is controlled such that the semiconductor substrate is maintained at a first temperature that is less than or equal to 650° C. during the curing. 9. The method of manufacturing a capacitor of a semiconductor device according to claim 1 wherein the step of curing is performed for 30 seconds to 5 minutes. 10. The method of manufacturing a capacitor of a semiconductor device according to claim 1 wherein the step of crystallizing is performed for 30 seconds to 5 minutes. 11. The method of manufacturing a capacitor of a semiconductor device according to claim 1 wherein the semiconductor substrate is in contact with the stage during the curing and crystallizing; and the curing is performed at a lower pressure than the crystallizing. 12. The method of manufacturing a capacitor of a semiconductor device according to claim 11 wherein a temperature of the heater is 750° C. during the curing and crystallizing. 13. The method of manufacturing a capacitor of a semiconductor device according to claim 11 wherein the crystallizing is performed at a pressure of 5 to 300 Torr. 14. The method of manufacturing a capacitor of a semiconductor device according to claim 1, wherein the curing and crystallizing are performed at a pressure that is less than or equal to 300 Torr. 15. The method of manufacturing a capacitor of a semiconductor device according to claim 1 wherein the curing is performed at a pressure that is less than or equal to 3 Torr. icating the activation of a program mode and which of the optionally selectable function circuits are to be elected to manipulate the input data signals. The function configuration circuit is connected to the optionally selectable function circuits to selectively elect, which of the optionally selectable function circuits are to manipulate the input data signals. The electrically programmable multiple selectable function integrated circuit module optionally has common function circuit connected to common function connectors and the plurality of optionally selectable function circuits to manipulate common data signals, and transmit common output data signals to the selectable function circuits. . 5. The method of claim 4, wherein the mesophilic organism is a mesophilic bacterial cell. 6. The method of claim 5, wherein the mesophilic bacterial cell selected from the group consisting of an Escherichia coli a Bacillus species cell, a Salmonella species cell, a Streptococcus species cell, and a Staphylococcus species cell. 7. The method of claim 6, wherein the mesophilic bacterial cell is an Escherichia coli cell. 8. The method of claim 7, wherein the three component polymerase has a core Pol III comprising α and θ subunits. 9. The method of claim 7, wherein the three component DNA polymerase has a core Pol III comprising α and ε subunits. 10. The method of claim 7, wherein the three component DNA polymerase has a γ complex comprising δ, δ', χ, and Ψ subunits. 11. The method of claim 4, wherein said organism is a mammal. 12. A method for dideoxy sequencing a nucleic acid molecule comprising: subjecting said nucleic acid molecule to a nucleic acid sequencing process with a three component DNA polymerase, wherein the three component DNA polymerase comprises a DNA polymerase component, a sliding clamp component, and a clamp loader component. 13. The method of claim 12, wherein the three component DNA polymerase has 3'-5' exonuclease activity. 14. The method of claim 13, wherein the three component DNA polymerase is a Pfu/DEEPVENT, TliVENT, Tth, Tma, or Tne(3'exo+) DNA polymerase. 15. The method of claim 12, wherein the three component DNA polymerase is isolated from a mesophilic or thermophilic organism. 16. The method of claim 15, wherein the mesophilic organism is a mesophilic bacterial cell. 17. The method of claim 16, wherein said mesophilic bacterial cell is selected from the group consisting of an Escherichia coli cell, a Bacillus species cell, a Salmonella species cell, a Streptococcus species cell, and a Staphylococcus species cell. 18. The method of claim 17, wherein the mesophilic bacterial cell is an Escherichia coli cell. 19. The method of claim 18, wherein the three component DNA polymerase has a core Pol III comprising α and θ subunits. 20. The method of claim 18, wherein the three component DNA polymerase has a core Pol III comprising α and ε subunits. 21. The method of claim 18, wherein the three component DNA polymerase has a γ complex comprising δ, δ', χ, and Ψ subunits. 22. The method of claim 15, wherein said organism is an animal. 23. The method of claim 22, wherein said animal is a mammal. 24. A kit for amplifying a nucleic acid molecule comprising a three component DNA polymerase comprising a DNA polymerase component, a sliding clamp component, and a clamp loader component and at least one deoxynucleoside triphosphate. 25. The kit of claim 24, wherein the three component DNA polymerase is isolated from a mesophilic or thermophilic organism. 26. The kit of claim 25, wherein said mesophilic organism is a mesophilic bacterial cell. 27. The kit of claim 26, wherein the mesophilic bacterial cell is an Escherichia coli cell. 28. The kit of claim 27, wherein the three component DNA polymerase has a core Pol III comprising α and θ subunits. 29. The kit of claim 27, wherein the three component DNA polymerase has a core Pol III comprising α and ε subuits. 30. The kit of claim 27, wherein the three component DNA polymerase has γ complex comprising δ, δ', χ, and Ψ subunits. 31. The kit of claim 24, wherein the three component DNA polymerase has 3'-5' exonuclease activity. 32. The kit of claim 31, wherein the three component DNA polymerase is a Pfu/DEEPVENT, Tli/VENT, Tth, Tma, or Tne(3'exo+) DNA polymerase. 33. A kit for sequencing a nucleic acid molecule comprising a carrier means having in close confinement therein two or more container means, wherein a first container means contains a three component DNA polymerase comprising a DNA polymerase component, a sliding clamp component, and a clamp loader component and a second container means contains at least one dideoxynucleoside tr iphosphate. 34. The kit of claim 33, wherein the three component DNA polymerase is substantially reduced in 3'-5' exonuclease activity. 35. The kit of claim 33, wherein the three component DNA polymerase is isolated from a mesophilic or thermophilic organism. 36. The kit of claim 35, wherein said mesophilic organism is a mesophilic bacterial cell. 37. The kit of claim 36, wherein the mesophilic bacterial cell is an Escherichia coli cell. 38. The kit of claim 33, wherein the three component DNA polymerase has a core Pol III comprising α and θ subunits. 39. The kit of claim 33, wherein the three component DNA polymerase has a core Pol III comprising α and ε subunits. 40. The kit of claim 33, wherein the three component DNA polymerase has a γ complex comprising δ, δ', χ, and Ψ subunits. 41. The kit of claim 33 further comprising a DNA polymerase having 3'-5' exonuclease activity. 42. The kit of claim 41, wherein said DNA polymerase having 3'-5' exonuclease activity is a Pfu/DEEPVENT, Tli/VENT, Tth, Tma, or Tne(3'exo+) DNA polymerase.