초록

The present invention relates to an improved method for forming a UBM pad and solder bump connection for a flip-chip which eliminates at least two mask steps required in standard UBM pad forming processes when repatterning the bond pad locations.

대표청구항 ▼

The present invention relates to an improved method for forming a UBM pad and solder bump connection for a flip-chip which eliminates at least two mask steps required in standard UBM pad forming processes when repatterning the bond pad locations. g a first absorption coefficient relative to the wave

The present invention relates to an improved method for forming a UBM pad and solder bump connection for a flip-chip which eliminates at least two mask steps required in standard UBM pad forming processes when repatterning the bond pad locations. g a first absorption coefficient relative to the wavelength of the laser beam; (b) absorbing energy from the laser beam into the layer based on the first absorption coefficient; (c) forming at first set of scribe lines in a first direction in the layer by scanning the laser beam across the layer, the laser beam removing at least a portion of the layer; and (d) forming a second set of scribe lines in a second direction in the layer by scanning the laser beam across the layer and removing at least a portion of the layer with the laser beam, the second direction substantially orthogonal to the first direction, wherein the substrate has a second absorption coefficient relative to the wavelength of the laser beam, the second absorption coefficient less than the first absorption coefficient by about an order of magnitude. 18. The method according to claim 17, wherein the second absorption coefficient is less than the first absorption coefficient by at least an order of magnitude. 19. A method for dicing a semiconductor substrate comprising the steps of: (a) aiming a laser beam at a layer placed over a top surface of the substrate; (b) absorbing energy from the laser beam into only the layer; (c) forming at first set of scribe lines in a first direction in the layer by scanning the laser beam across the layer, the laser beam removing at least a portion of the layer; and (d) forming a second set of scribe lines in a second direction in the layer by scanning the laser beam across the layer and removing at least a portion of the layer with the laser, the second direction substantially orthogonal to the first direction, wherein the layer has a first absorption coefficient and the substrate has a second absorption coefficient relative to a wavelength from the laser beam, the first absorption coefficient greater than the second absorption coefficient. 20. The method according to claim 19, wherein the first absorption coefficient is greater than the second absorption coefficient by at least an order of magnitude. 21. A method for dicing a semiconductor substrate using a laser and a dicing saw, the method comprising the steps of: (a) aiming the laser at a layer placed over a top surface of the substrate; (b) absorbing energy from the laser into the layer; (c) forming at first set of scribe lines in a first direction in the layer by scanning the laser across the layer, the laser removing at least a portion of the layer; (d) forming a second set of scribe lines in a second direction in the layer by scanning the laser across the layer and removing at least a portion of the layer with the laser, the second direction substantially orthogonal to the first direction; (e) cutting a first set of kerfs in the substrate with the dicing saw along the first set of scribe lines; and (f) cutting a second set of kerfs in the substrate with the dicing saw along the second set of scribe lines, wherein the layer has a first absorption coefficient and the substrate has a second absorption coefficient relative to a wavelength of the laser beam, the first absorption coefficient greater than the second absorption coefficient by about an order of an order of magnitude, and the first set of kerfs and said second set of kerfs form a plurality of dice from the substrate. 22. The method according to claim 1, wherein the first absorption coefficient is greater than the second absorption coefficient by at least an order of magnitude. 23. A method for dicing a semiconductor substrate using a laser and a dicing saw, the method comprising the steps of: (a) aiming the laser at a layer placed over a top surface of the substrate; (b) absorbing energy from the laser into the layer; (c) forming a first scribe line in a first direction in the layer by scanning the laser across the layer, the laser removing at least a portion of the layer; (d) cutting a first kerf in the substrate with the dicing saw along the first scribe line; (e) forming a furth