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The present invention provides a bipolar transistor having a collector located in a semiconductor substrate having a given bandgap, and a base in contact with the collector. The base has a bandgap less than the bandgap of the substrate. In addition, the bipolar transistor further includes an emitter

The present invention provides a bipolar transistor having a collector located in a semiconductor substrate having a given bandgap, and a base in contact with the collector. The base has a bandgap less than the bandgap of the substrate. In addition, the bipolar transistor further includes an emitter located over the base, where the emitter has a bandgap greater than the bandgap of the substrate. A method of forming a bipolar transistor, and an integrated circuit incorporating the bipolar transistor or the method, are also disclosed.

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1. A bipolar transistor, comprising: a collector located in a semiconductor substrate having a given bandgap; a base in contact with the collector, the base having a bandgap less than the bandgap of the substrate; and an emitter located over the base and having a bandgap greater than the bandga

1. A bipolar transistor, comprising: a collector located in a semiconductor substrate having a given bandgap; a base in contact with the collector, the base having a bandgap less than the bandgap of the substrate; and an emitter located over the base and having a bandgap greater than the bandgap of the substrate. 2. The bipolar transistor as recited in claim 1 wherein the emitter comprises a semi-insulating material having silicon oxide wherein an atomic weight percent of the oxygen is about 26%. 3. The bipolar transistor as recited in claim 2 wherein the semi-insulating material includes oxygenated silicon deposited in a silane nitrous oxide gas within a pressure ranging from about 400 mTorr to about 700 mTorr, at a temperature ranging from about 600° C. to about 650° C., and wherein the oxygenated silicon is annealed at a temperature of about 900° C. for about 1 hour. 4. The bipolar transistor as recited in claim 1 wherein the emitter comprises a semi-insulating material having hydrogenated silicon. 5. The bipolar transistor as recited in claim 1 wherein the base includes a first dopant concentration and the emitter includes a second dopant concentration that is less than the first dopant concentration and wherein the base and emitter have a bandgap differential that is at least about 0.5 eV or greater. 6. The bipolar transistor as recited in claim 5 wherein the second dopant concentration is about 1E16/cm2or less, and the first dopant concentration is at least about 1E18/cm2. 7. The bipolar transistor as recited in claim 1 wherein the base has a bandgap of about 1.0 eV and the emitter has a bandgap of about 1.5 eV. 8. An Integrated Circuit, comprising: passive devices formed over a substrate; dielectric layers; a bipolar transistor, including: a collector located in a semiconductor substrate having a given bandgap; a base in contact with the collector, the base having a bandgap less than the bandgap of the substrate; and an emitter located over the base and having a bandgap greater than the bandgap of the substrate; and interconnections, created in the dielectric layers, connecting the passive devices and the bipolar transistor to form an operative integrated circuit. 9. The integrated circuit as recited in claim 8 wherein the emitter comprises a semi-insulating material having silicon oxide wherein an atomic weight percent of the oxygen is about 26%. 10. The integrated circuit as recited in claim 9 wherein the semi-insulating material includes oxygenated silicon deposited in a silane nitrous oxide gas within a pressure ranging from about 400 mTorr to about 700 mTorr, at a temperature ranging from about 600° C. to about 650° C., and wherein the oxygenated silicon is annealed at a temperature of about 900° C. for about 1 hour. 11. The integrated circuit as recited in claim 8 wherein the emitter comprises a semi-insulating material having hydrogenated silicon. 12. The integrated circuit as recited in claim 8 wherein the base includes a first dopant concentration and the emitter includes a second dopant concentration that is less than the first dopant concentration and wherein the base and emitter have a bandgap differential that is at least about 0.5 eV or greater. 13. The integrated circuit as recited in claim 12 wherein the second dopant concentration is about 1E16/cm2or less and the emitter includes a bandgap of about 1.5 eV, and where the first dopant concentration is at least about 1E18/cm2and the base includes a bandgap of about 1.0 eV.