IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0928605
(2001-08-13)
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발명자
/ 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
Ramaswamy, V. G.Rosen, Steven J.
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인용정보 |
피인용 횟수 :
1 인용 특허 :
15 |
초록
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A method of laser shock peening a metallic part by firing a laser on a coated laser shock peening surface of the part which has been covered with an explosive coating containing at least one explosive ingredient. Two or more explosive ingredients having different shock sensitivities may be used and
A method of laser shock peening a metallic part by firing a laser on a coated laser shock peening surface of the part which has been covered with an explosive coating containing at least one explosive ingredient. Two or more explosive ingredients having different shock sensitivities may be used and the laser beam is fired with sufficient power to explode at least some amount of each of the explosive ingredients. One embodiment of the invention includes forming an ablative coated surface by coating a laser shock peening surface on the workpiece with an ablative material containing at least one explosive ingredient, continuously firing a laser beam which repeatably pulses between relatively constant periods, on the coated surface of the workpiece while providing continuous movement between the laser beam and the metallic workpiece, and firing the laser beam with sufficient power to vaporize the ablative material of the coating and to explode at least some of the explosive ingredient with the pulses and forming laser beam spots on the coating and forming a region in the workpiece having deep compressive residual stresses imparted by the laser beam pulsing such that the region extends into the workpiece from the laser shock peening surface. Suitable explosive ingredients include nitroglycerin and ammonium nitrate. One or more oxidizers may be added to an ablative material to form the explosive coating in the form of a tape or film coating.
대표청구항
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A method of laser shock peening a metallic part by firing a laser on a coated laser shock peening surface of the part which has been covered with an explosive coating containing at least one explosive ingredient. Two or more explosive ingredients having different shock sensitivities may be used and
A method of laser shock peening a metallic part by firing a laser on a coated laser shock peening surface of the part which has been covered with an explosive coating containing at least one explosive ingredient. Two or more explosive ingredients having different shock sensitivities may be used and the laser beam is fired with sufficient power to explode at least some amount of each of the explosive ingredients. One embodiment of the invention includes forming an ablative coated surface by coating a laser shock peening surface on the workpiece with an ablative material containing at least one explosive ingredient, continuously firing a laser beam which repeatably pulses between relatively constant periods, on the coated surface of the workpiece while providing continuous movement between the laser beam and the metallic workpiece, and firing the laser beam with sufficient power to vaporize the ablative material of the coating and to explode at least some of the explosive ingredient with the pulses and forming laser beam spots on the coating and forming a region in the workpiece having deep compressive residual stresses imparted by the laser beam pulsing such that the region extends into the workpiece from the laser shock peening surface. Suitable explosive ingredients include nitroglycerin and ammonium nitrate. One or more oxidizers may be added to an ablative material to form the explosive coating in the form of a tape or film coating. of said side visor. 6. The side visor fastener claimed in claim 5, wherein: a. said receiver clip element has engagement pawls formed in a plate shape extending in the longitudinal direction of said retainer; and b. said pin clip element has an enlarged engagement portion that is received into and through the engagement pawls to be connected therein. 7. The side visor fastener claimed in claim 6, wherein: a. said shaft and said bearing have a predetermined axial clearance allowing one of them to be moved in the axial direction of said shaft to prevent the disengagement therebetween. e stack. 14. The method of claim 1 wherein the directing of multiple jets of fluid occurs prior to the attaching to the planar surface of the outermost wafer. 15. A method for individually separating wafers from a stack of wafers, the method comprising: directing multiple jets of a fluid between an outermost wafer in the stack and an adjacent wafer in a same plane substantially parallel to a planar surface of the outermost wafer, the jets being at sufficient pressure and at sufficiently spaced-apart locations around the wafer stack to cause the outermost wafer to separate longitudinally from the adjacent wafer without lateral movement there between; attaching to a planar surface of the outermost wafer; lifting the attached outermost wafer longitudinally from the wafer stack; moving the lifted and attached outermost wafer laterally from the wafer stack; and releasing the attached outermost wafer apart from the stack, thereby separating the wafers in the stack without contact between a solid object and a wafer edge. 16. An apparatus for separating wafers from a stack of wafers, comprising: a base; a plurality of nozzles connected to the base and adapted to direct multiple jets of fluid between a outermost wafer in the stack and an adjacent wafer, the jets being at sufficient pressure and at sufficiently spaced-apart locations around the wafer stack to cause the outermost wafer to separate longitudinally from the adjacent wafer without significant lateral movement there between; and a chuck attached to the base and adapted to attach to a planar surface of the outermost wafer. 17. A de-stacking mechanism for individually separating wafers from a stack of wafers, comprising: a first apparatus including: a base; a plurality of nozzles attached to the base and adapted to each direct a jet of fluid between an outermost wafer in the stack and an adjacent wafer at sufficient pressure and at sufficiently spaced-apart locations around the wafer stack to cause the outermost wafer to separate longitudinally from the adjacent wafer without significant lateral movement there between; and a chuck attached to the base and adapted to attach to a planar surface of the outermost wafer; a second apparatus including: a base; a plurality of nozzles attached to the base and adapted to each direct a jet of fluid between an outermost wafer in the stack and an adjacent wafer at sufficient pressure and at sufficiently spaced-apart locations around the wafer stack to cause the outermost wafer to separate longitudinally from the adjacent wafer without lateral movement there between; and a chuck attached to the base and adapted to attach to a planar surface of the outermost wafer; and a supported member adapted to support the first apparatus and the second apparatus over a wafer stack. 18. The apparatus of claim 16 wherein the nozzles are attached to the base. 19. The apparatus of claim 16 wherein the nozzles are adapted to direct the jets of fluid in a same plane substantially parallel to the planar surface of the outermost wafer. 20. The apparatus of claim 16 including a sensor adapted to sense when the outermost wafer is attached to the chuck. 8443, 19831200, Fischer, 015/326; US-4671380, 19870600, Henderson et al., 181/233; US-4676515, 19870600, Cobb, 277/235; US-4745988, 19880500, Hardt et al., 181/249; US-4758135, 19880700, Woodward et al., 417/559; US-4782858, 19881100, Fujiwara, 137/571; US-4831885, 19890500, Dahlin, 073/861.355; US-4846482, 19890700, Blodgett et al., 277/235; US-4854839, 19890800, DiFlora, 417/571; US-4901760, 19900200, Nagashima, 137/514; US-4934343, 19900600, Lee, 181/206; US-4979587, 19901200, Hirt et al., 181/213; US-5101931, 19920400, Blass et al., 181/240; US-5129793, 19920700, Blass et al., 417/312; US-5152366, 19921000, Reitz, 181/249; US-5199856, 19930400, Epstein et al., 417/312; US-5201643, 19930400, Hirosawa et al., 417/472; US-5205719, 19930400, Childs et al., 417/312; US-5214937, 19930600, Henrichs et al., 062/468; US-5224840, 19930700, Dreiman et al., 417/312; US-5226796, 19930700, Okamoto et al., 417/571; US-5238370, 19930800, DiFlora, 417/312; US-5265646, 19931100, Richardson, 137/856; US-5288212, 19940200, Lee, 417/312; US-5341654, 19940800, Hewette et al., 062/296; US-5493080, 19960200, Moss, 181/232; US-5495711, 19960300, Kalkman et al., 060/469; US-5583325, 19961200, Schutte et al., 181/237; US-5584674, 19961200, Mo, 417/312; US-5596879, 19970100, Burkhart et al., 062/296; US-5635687, 19970600, Biscaldi, 181/272; US-5697216, 19971200, Phillips, 060/469; US-5723828, 19980300, Nakagawa, 181/250; US-5762479, 19980600, Baars et al., 417/312; US-5785508, 19980700, Bolt, 417/560; US-5899218, 19990500, Dugan, 137/001; US-5951261, 19990900, Paczuski, 417/315; US-5957664, 19990900, Stolz et al., 417/053; US-5996733, 19991200, DeTuncq et al., 181/250
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