초록 ▼

Bonded screens such as vehicle windscreens (1) bonded to a supporting frame (5) by homogeneous bonding material (6) are released by firstly arranging energy delivery means (9) adjacent the screen and subsequently transmitting energy from the delivery means through the screen thereby to effect releas

Bonded screens such as vehicle windscreens (1) bonded to a supporting frame (5) by homogeneous bonding material (6) are released by firstly arranging energy delivery means (9) adjacent the screen and subsequently transmitting energy from the delivery means through the screen thereby to effect release of the screen (1) from the frame (5) by either causing degradation of some of the homogeneous bonding material and/or cleavage or degradation of the screen material. The energy delivered may, for example, be ultrasonic or laser radiation, and is preferably arranged to be concentrated at a predetermined localized region to enhance the release mechanism.

대표청구항 ▼

Bonded screens such as vehicle windscreens (1) bonded to a supporting frame (5) by homogeneous bonding material (6) are released by firstly arranging energy delivery means (9) adjacent the screen and subsequently transmitting energy from the delivery means through the screen thereby to effect releas

Bonded screens such as vehicle windscreens (1) bonded to a supporting frame (5) by homogeneous bonding material (6) are released by firstly arranging energy delivery means (9) adjacent the screen and subsequently transmitting energy from the delivery means through the screen thereby to effect release of the screen (1) from the frame (5) by either causing degradation of some of the homogeneous bonding material and/or cleavage or degradation of the screen material. The energy delivered may, for example, be ultrasonic or laser radiation, and is preferably arranged to be concentrated at a predetermined localized region to enhance the release mechanism. 0.3% by weight. 13. A method as claimed in claim 2, wherein the cold rolling produces a cold reduction of the strip thickness in the range of 40% to 80%. 14. A method as claimed in claim 2, wherein said annealing produces a stress relieved microstructure with no more than 10% re-crystallization and an elongation to break of at least 10%. 15. A method as claimed in claim 3, wherein said annealing produces a stress relieved microstructure with no more than 10% re-crystallization and an elongation to break of at least 10%. 16. A method as claimed in claim 13, wherein said annealing produces a stress relieved microstructure with no more than 10% re-crystallization and an elongation to break of at least 10%. 17. A method as claimed in claim 1, wherein the annealing temperature is in the range 500° C. to 600° C. 18. A method as claimed in claim 7, wherein the cold rolling step produces a strip thickness reduction in the range 40% to 60%. 19. A method of producing steel strip, comprising continuously casting plain carbon steel into a strip of no more than 5 mm thickness, coiling the strip, cold rolling the strip, and annealing the cold rolled strip to produce a stress relieved microstructure therein; wherein the cold rolling produces a cold reduction in a range which is sufficient to increase the tensile strength of the strip to at least 680 MPa but such that the total elongation to break of the strip after said annealing is at least 8%. 20. A method as claimed in claim 19, wherein the tensile strength of the strip is increased to at least 700 Mpa. 21. A method as claimed in claim 19, wherein the cold rolling produces a cold reduction of the strip thickness in the range of 40% to 80%. 22. A method as claimed in claim 19, wherein said annealing produces a stress relieved microstructure with no more than 10% re-crystallization and an elongation to break of at least 10%. 23. A method as claimed in claim 22, wherein the annealing temperature is in the range 500° C. to 600° C. 24. A method as claimed in claim 19, wherein the continuously cast strip is in-line hot rolled prior to coiling. 25. A method as claimed in claim 24, wherein the hot rolling produces a strip thickness reduction of no more than 40%. 26. A method as claimed in claim 24, wherein the cold rolling step produces a strip thickness reduction in the range 40% to 60%. 27. A method as claimed in claim 19, wherein the strip is continuously cast to a thickness of no greater than 2 mm prior to any rolling. 28. A method as claimed in claim 27, wherein the strip is continuously cast to a thickness of no greater than 1.5 mm prior to any rolling and is reduced to thickness in the range 0.4 mm to 1 mm by said cold rolling and/or hot rolling. 29. A method as claimed in claim 19, wherein the plain carbon steel is a silicon/manganese killed steel having the following composition by weight: TBL Carbon 0.02-0.08% Manganese 0.03-0.80% Silicon 0.10-0.40% Sulphur 0.005-0.05% Aluminum less than 0.01% 30. A method as claimed in claim 29, wherein the steel has a manganese content of about 0.6% and a silicon content of about 0.3% by weight. etal powder, as well as the viscosity of the charges, is reduced. erein the substrate is rotated through the solvent at a speed of about 1 mm/second to about 10 mm/second. 13. The method of claim 11, further comprising exhausting gaseous by-products from the cleaning module. 14. The method of claim 11, further comprising injecting ozone gas into the gaseous section of the cleaning module from an ozone generator in flow communication with the cleaning module. 15. The method of claim 11, wherein the substrate comprises a semiconductor wafer. 16. The method of claim 11, further comprising, allowing solvent vapors to condense on at least a portion of the organic material, and exposing the condensed solvent vapors to the ozone gas atmosphere in the gaseous section of the cleaning module to at least partially remove the organic material from the substrate surface. 17. The method of claim 11, further comprising mixing ozone gas into the solvent contained within the solvent section. 18. A method for removing organic material from a surface of a substrate, comprising the steps of: providing a cleaning module comprising a gaseous section and a solvent section containing a solvent; at least partially submerging the substrate within the solvent; flowing an ozone gas into the gaseous section of the cleaning module to provide an ozone gas atmosphere; and moving the substrate continuously through the solvent and then through the ozone gas atmosphere in the gaseous section of the cleaning module, whereby a meniscus of solvent forms at an interface of the solvent and the substrate, and a thin layer of the solvent remains over the organic material on the surface of the substrate as the substrate is exposed to the ozone gas atmosphere, and the ozone gas reacts with the organic material through the meniscus, the thin layer of the solvent, or both, to remove at least a portion of the organic material from the substrate surface. 19. A method for removing organic material fr