While a substantially water-free hydrocarbon feed is being charged to a catalytic reformer reactor, an organic chloride is contacted with the reformer catalyst in an amount and for a time period that are effective to restore at least a portion of the activity of the reformer catalyst.
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While a substantially water-free hydrocarbon feed is being charged to a catalytic reformer reactor, an organic chloride is contacted with the reformer catalyst in an amount and for a time period that are effective to restore at least a portion of the activity of the reformer catalyst. tom electrode,
While a substantially water-free hydrocarbon feed is being charged to a catalytic reformer reactor, an organic chloride is contacted with the reformer catalyst in an amount and for a time period that are effective to restore at least a portion of the activity of the reformer catalyst. tom electrode, 19 Integrated Ferroelectrics Nos. 1-4, pp. 111-119 (1998). Takaaki Kawahara et al., (Ba, Sr)TiO3Films Prepared by Liquid Source Chemical Vapor Deposition on Ru Electrodes, 35 Jpn. J. Appl. Phys. Pt. 1, No. 9B, pp. 4880, 4883 (1996). Rajesh Khamankar et al., A Novel Low-Temperature Process for High Dielectric Constant BST Thin Films for ULSI DRAM Applications, Microelectronics Research Center, Univ. of Texas at Austin, TX (Undated), 2 pages. Yong Tae Kim et al., Abstract, Advantages of RuOxbottom electrode in the dielectric and leakage characteristics of (Ba,Sr)TiO3capacitor, 35 Jpn. J. Appl. Phys. Pt. 1, No. 12A, pp. 6153-6156 (1996). S.H. Paek et al., Abstract, Characterization of MIS capacitor of BST thin films deposited on Si by RF magnetron sputtering, Ferroelectric Thin Films V. Symposium, San Francisco, CA, pp. 33-38 (Apr. 7, 1995). N. Takeuchi et al., Abstract, Effect of firing atmosphere on the cubic-hexagonal transition in Ba0.99 Sr.01 Tio3,98Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi No. 8, pp. 836-839 (1990). H. Yamaguchi, et al., Abstract, Reactive coevaporation synthesis and characterization of SrTiO3-BaTiO3thin films, IEEE International Symposium on Applications of Ferroelectrics, Greenville, SC, pp. 285-288 (Aug. 2, 1992). S. Yamamichi et al., Abstract, Ba + Sr/Ti ratio dependence of the dielectric properties for (Ba0.5)Sr0.5 TiO3thin films prepared by ion beam sputtering, 64 Applied Physics Letters No. 13, pp. 1644-1646 (1994). M. Yamamuka et al., Abstract, Thermal-Desorption Spectroscopy of (Ba,Sr)TiO3Thin-Films Prepared by Chemical-Vapor-Deposition, 35 Jpn. J. of Appl. Phys. Pt. 1, No. 2A, pp. 729-735 (1996). Arai T. et al., Preparation of SrTiO3Films on 8-Inch Wafers by Chemical Vapor Deposition, 35 JPN. J. Appl. Phys., Part 1, No. 9B, pp. 4875-4879 (Sep., 1996). U.S. patent application Ser. No. 09/388,063, Agarwal et al., filed Aug. 30, 1999. U.S. patent application Ser. No. 09/476,516, Basceri, filed Jan. 3, 2000. Kim et al., Structural and electrical properties of BaTiO3grown on p-inP (100)by low-pressure metalorganic chemical vapor deposition at low temperature, 65 Appl. Phys. Lett. No., 15, pp. 1955-1957 (Oct. 10, 1994). Basceri et al.; "The dielectric response as a function of temperature and film thickness . . . " American Institute of Physics, Sept. 1, 1997, vol. 82, No. 5, pp. 2497-2504. U.S. patent application Ser. No. 09/652,907, Basceri et al., filed Aug. 31, 2000. U.S. patent application Ser. No. 09/776,217, Basceri, filed Feb. 2, 2001.
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