IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0763650
(2001-03-19)
|
우선권정보 |
DE-0038824 (1998-08-26); DE-0050217 (1998-10-31) |
국제출원번호 |
PCT/EP99/06129
(1999-08-20)
|
국제공개번호 |
WO00/12775
(2000-03-09)
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발명자
/ 주소 |
- Scheibe, Hans-Joachim
- Meyer, Carl-Friedrich
- Schultrich, Bernd
- Ziegele, Holger
|
출원인 / 주소 |
- Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung E.V.
|
대리인 / 주소 |
Leydig Voit & Mayer, Ltd.
|
인용정보 |
피인용 횟수 :
10 인용 특허 :
5 |
초록
▼
The invention relates to a method and a device for coating substrates in a vacuum, in which a plasma is generated from a target using a laser beam and ionized particles of the plasma are deposited on the substrate in the form of a layer, inert reactive gas or a gas mixture being supplied. The soluti
The invention relates to a method and a device for coating substrates in a vacuum, in which a plasma is generated from a target using a laser beam and ionized particles of the plasma are deposited on the substrate in the form of a layer, inert reactive gas or a gas mixture being supplied. The solution according to the invention is intended to provide a possible way of supplying gases or gas mixtures in a locally and temporally defined manner. According to the invention, this object is achieved by the fact that the gas or gas mixture is supplied to the plasma from and/or through a porous target, the intention being that the target is to have a temporary storage function on account of its porosity.
대표청구항
▼
The invention relates to a method and a device for coating substrates in a vacuum, in which a plasma is generated from a target using a laser beam and ionized particles of the plasma are deposited on the substrate in the form of a layer, inert reactive gas or a gas mixture being supplied. The soluti
The invention relates to a method and a device for coating substrates in a vacuum, in which a plasma is generated from a target using a laser beam and ionized particles of the plasma are deposited on the substrate in the form of a layer, inert reactive gas or a gas mixture being supplied. The solution according to the invention is intended to provide a possible way of supplying gases or gas mixtures in a locally and temporally defined manner. According to the invention, this object is achieved by the fact that the gas or gas mixture is supplied to the plasma from and/or through a porous target, the intention being that the target is to have a temporary storage function on account of its porosity. the materials of said first and of said second hard material layers to be one of: TiN and TiAlN, or TiCN and TiAlCN, or TiN and TiAlCN, or TiCN and TiAlN respectively, in any order. 4. The method of claim 1, further comprising depositing a mono-layer forming at least one of said first and of said second hard material layers to have a thickness of at most 2 μm. 5. The method of claim 1, further comprising the step of selecting the total thickness of said wear protective coating to be at least 1 μm. 6. The method of claim 5, thereby selecting said thickness to be at most 15 μn. 7. The method of claim 1, further comprising the step of depositing more than two of said first and second hard material layers in said wear protective coating. 8. The method of claim 1, wherein said workpiece has a workpiece body of steel or of a hard metal. 9. The method of claim 1, wherein said workpiece manufactured is one of a press tool, an indexable insert endmillig tool, a drill, a milling cutter, a gear cutting tool, a saw blade. 10. The method of claim 1, further comprising performing deposition of said first and of said second hard material layers by means of a PVD process. 11. The method of claim 10, further comprising performing said PVD process as a reactive PVD process. 12. The method of claim 10, wherein said PVD process is selected to be one of cathodic arc vaporization or of sputtering. 13. The method of claim 1, thereby depositing said transition layer with a thickness of between 10 nm and 400 nm. 14. A method for manufacturing a workpiece with a wear protective hard material coating system, comprising the steps of depositing on a workpiece body two subsequent layers of said system having different crystallographic privileged orientation, one privileged orientation being in the (111) plane, the second privileged orientation being in the (200) plane, thereby construing said system exclusively from respectively two or more than two of said first and second layers and depositing said first and second layers by a PVD process, and selecting a value I(200)/I(111) between an intensity of (111) plane, I(111) and an intensity of (200) plane, I(200) of one of said first and second layers to be at most 1, said value of the other of said first and second hard materials layers to be at least 1. 15. The method of claim 14, further comprising the steps of: depositing said first layer of a material selected from the group consisting of TiN, TiCN, TiAlN, TAlCN; and depositing said second layer made of a material selected from the group consisting of TiN, TiCN, TiAlN, TAlCN. 16. The method of claim 14, further comprising the step of depositing between said first and said second layers a transition layer being made of the materials of said first and second hard material layers. 17. The method of claim 16, further comprising the step of depositing said transition layer with a thickness of between 5 nm and 500 nm. 18. The method of claim 17, further comprising selecting said thickness to be between 10 nm and 400 nm. 19. The method of claim 14, further comprising the step of selecting the materials of said first and of said second layers to be different materials. 20. The method of claim 14, further comprising the step of selecting the materials of said first and of said second hard material layers to be one of: TiN and TiAlN, or TiCN and TiAlCN, or TiN and TiAlCN, or TiCN and TiAlN, respectively, in any order. 21. The method of claim 14, further comprising the step of selecting the materials of said first and of said second layers to be the same materials. 22. The method of claim 14, further comprising the step of selecting a thickness of a mono-layer forming at least one of said first and of said second layers to be at most 2 μm. 23. The method of claim 14, further comprising the step of depositing said system with a thickness of at least 1 μm. 24. The method of claim 23, further comprising the step of depositing said system with a thickness of
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