초록 ▼

A location reporting paging communication system comprising space satellites, ground stations and a remote receiving unit adapted to resolve a global position from signals transmitted from a communication transmitter. The subscriber in possession of the remote receiving unit updates the paging netwo

A location reporting paging communication system comprising space satellites, ground stations and a remote receiving unit adapted to resolve a global position from signals transmitted from a communication transmitter. The subscriber in possession of the remote receiving unit updates the paging network with global positioning information. A caller paging a subscriber in possession of the remote receiving unit may request the global location of the remote receiving unit. The paging network could divulge or block such information from a caller depending on the requirements of the subscriber.

대표청구항 ▼

A location reporting paging communication system comprising space satellites, ground stations and a remote receiving unit adapted to resolve a global position from signals transmitted from a communication transmitter. The subscriber in possession of the remote receiving unit updates the paging netwo

A location reporting paging communication system comprising space satellites, ground stations and a remote receiving unit adapted to resolve a global position from signals transmitted from a communication transmitter. The subscriber in possession of the remote receiving unit updates the paging network with global positioning information. A caller paging a subscriber in possession of the remote receiving unit may request the global location of the remote receiving unit. The paging network could divulge or block such information from a caller depending on the requirements of the subscriber. ng of a field effect transistor (FET), a heterojunction bipolar transistor (HBT) and a high electron mobility transistor (HEMT). 13. A saturated upconverter according to claim 9 wherein said oscillator further comprises a tank circuit in electrical communication with said transistor for causing said transistor to produce the RF output signal in response to the supply voltage and the supply current. 14. A saturated upconverter according to claim 13 wherein said transistor comprises, first, second and third terminals, and wherein said tank circuit comprises first and second reactances electrically connected to the first and second terminals of said transistor, respectively, such that said transistor is unstable. 15. A saturated upconverter according to claim 13 wherein said tank circuit further comprises a varactor electrically connected to a respective reactance such that a control input is provided between said varactor and the respective reactance in order to tune the RF output signal. 16. A saturated upconverter according to claim 9 wherein said oscillator further comprises a bias supply for providing the supply voltage and the supply current to said transistor. 17. A saturated upconverter according to claim 9 further comprising a switching element disposed between said oscillator and said antenna. 18. A saturated upconverter according to claim 9 wherein the output power level of said modulated RF output signal is between 20 dBm and 35 dBm. 19. A linear upconverter comprising: an oscillator comprising a transistor formed of a semiconductor material having a wide bandgap and operating in a linear mode for producing a modulated radio frequency (RF) signal having an output power level that exceeds 20 dBm in response to a supply voltage and supply current; a first mixer for mixing a signal having an intermediate frequency with a signal derived from the modulated RF signal to produce a first signal; and a second mixer for mixing the first signals produced by said first mixer with another signal derived from the modulated RF signal to produce an output signal, wherein said first and second mixers receive the respective signals derived from the modulated RF signal without requiring any additional amplification for the modulated RF signal between said oscillator and said first and second mixers. 20. A linear upconverter according to claim 19 wherein said transistor of said oscillator is comprised of a semiconductor material having a bandgap of at least 2.0 electron volts (eV). 21. A linear upconverter according to claim 20 wherein said transistor of said oscillator is comprised of a semiconductor material having a wide bandgap selected from the group consisting of gallium nitride (GaN), aluminum gallium nitride (AlGaN), silicon carbide (SiC) and boron nitride (BN). 22. A linear upconverter according to claim 19 wherein said transistor of said oscillator is selected from the group consisting of a field effect transistor (FET), a heterojunction bipolar transistor (HBT) and a high electron mobility transistor (HEMT). 23. A linear upconverter according to claim 19 wherein said oscillator further comprises a tank circuit in electrical communication with said transistor for causing said transistor to produce the RF signal in response to the supply voltage and the supply current. 24. A linear upconverter according to claim 23 wherein said transistor comprises, first, second and third terminals, and wherein said tank circuit comprises first and second reactances electrically connected to the first and second terminals of said transistor, respectively, such that said transistor is unstable. 25. A linear upconverter according to claim 23 wherein said tank circuit further comprises a varactor electrically connected to a respective reactance such that a control input is provided between said varactor and the respective reactance in order to tune the RF signal. 26. A linear upconverter according to claim 19 wherein said oscillator furthe r comprises a bias supply for providing the supply voltage and the supply current to, said transistor. 27. A linear upconverter according to claim 19 further comprising a frequency alteration element disposed between said oscillator and a respective mixer for altering the frequency of the modulated RF signal that is produced by said oscillator and provided to the respective mixer. 28. A linear upconverter according to claim 19 further comprising an antenna, responsive to said second mixer, for transmitting the output signal produced by said second mixer. 29. A linear upconverter according to claim 28 further comprising a switching element disposed between said second mixer and said antenna. 30. A linear upconverter according to claim 28 further comprising a first filter disposed between said first and second mixers for removing the signal derived from the modulated RF signal and a second filter disposed between said second mixer and said antenna for removing the signal derived from the modulated RF signal. 31. A linear upconverter according to claim 19 wherein the output power level of said modulated RF signal is between 20 dBm and 35 dBm. 32. A downconverter according to claim 19 wherein the output power level of said RF signals is between 20 dBm and 35 dBm. 33. A downconverter comprising: an oscillator comprising a transistor formed of a semiconductor material having a wide bandgap for producing a radio frequency (RF) signals having an output power level that exceeds 20 dBm in response to a supply voltage and a supply current; an antenna for receiving signals; and a mixer for mixing the signals received by said antenna with signals derived from the RF signals to produce an output signal, wherein said mixer receives the RF signals derived from the RF signals without requiring any additional amplification of the RF signals between said oscillator and said mixer. 34. A downconverter according to claim 33 wherein said transistor of said oscillator is comprised of a semiconductor material having a bandgap of at least 2.0 electron volts (eV). 35. A downconverter according to claim 34 wherein said transistor of said oscillator is comprised of a semiconductor material having a wide bandgap selected from the group consisting of gallium nitride (GaN), aluminum gallium nitride (AlGaN), silicon carbide (SiC) and boron nitride (BN). 36. A downconverter according to claim 33 wherein said transistor of said oscillator is selected from the group consisting of a field effect transistor (FET), a heterojunction bipolar transistor (HBT) and a high electron mobility transistor (HEMT). 37. A downconverter according to claim 33 wherein said oscillator is a phase locked oscillator that further comprises a tank circuit in electrical communication with said transistor for causing said transistor to produce the RF signal in response to the supply voltage and the supply current. 38. A downconverter according to claim 37 wherein said transistor comprises, first, second and third terminals, and wherein said tank circuit comprises first and second reactances electrically connected to the first and second terminals of said transistor, respectively, such that said transistor is unstable. 39. A downconverter according to claim 37 wherein said tank circuit further comprises a varactor electrically connected to a respective reactance such that a control input is provided between said varactor and the respective reactance in order to tune the RF signal. 40. A downconverter according to claim 33 wherein said oscillator further comprises a bias supply for providing the supply voltage and the supply current to said transistor. 41. A downconverter according to claim 33 further comprising at least one amplifier disposed between said antenna and said mixer for amplifying the signals received by said antenna. ork, Sep. 1994.* European Search Report for EP 97 10 1730 (2 pgs.). Perdue, Robert J. et al, "Conversant 1 Voice System", Architecture And Applications, AT&T Technical Journal, vol. 65, Issue 5, Sep./Oct. 1986, Short Hills, New Jersey.