초록 ▼

A method for making an array of thin single-crystal substrates on a handle substrate comprising the steps: attaching a plurality of single-crystal substrates to a face of a support wafer; polishing said plurality of attached single-crystal substrates so that said single-crystal substrates surfaces a

A method for making an array of thin single-crystal substrates on a handle substrate comprising the steps: attaching a plurality of single-crystal substrates to a face of a support wafer; polishing said plurality of attached single-crystal substrates so that said single-crystal substrates surfaces are coplanar on said support surface and to a selected surface roughness; implanting a hydrogen to a selected depth into said attached single-crystal substrates; bonding said polished and hydrogen implanted attached single-crystal substrates to a first handle substrate; and splitting said polished and hydrogen implanted attached single-crystal substrates at said selected depth thereby forming an array of thin single-crystal substrates on said first handle substrate and a support wafer having a remaining portion of said attached single-crystal substrates.

대표청구항 ▼

A method for making an array of thin single-crystal substrates on a handle substrate comprising the steps: attaching a plurality of single-crystal substrates to a face of a support wafer; polishing said plurality of attached single-crystal substrates so that said single-crystal substrates surfaces a

A method for making an array of thin single-crystal substrates on a handle substrate comprising the steps: attaching a plurality of single-crystal substrates to a face of a support wafer; polishing said plurality of attached single-crystal substrates so that said single-crystal substrates surfaces are coplanar on said support surface and to a selected surface roughness; implanting a hydrogen to a selected depth into said attached single-crystal substrates; bonding said polished and hydrogen implanted attached single-crystal substrates to a first handle substrate; and splitting said polished and hydrogen implanted attached single-crystal substrates at said selected depth thereby forming an array of thin single-crystal substrates on said first handle substrate and a support wafer having a remaining portion of said attached single-crystal substrates. 729, 19961000, Purdy et al.; US-5605693, 19970200, Seare, Jr.; US-5683451, 19971100, Lenker et al.; US-5766247, 19980600, Aoki et al.; US-5766710, 19980600, Turnlund et al.; US-5776190, 19980700, Jarvik; US-6139575, 20001000, Shu et al.; US-6171335, 20010100, Wheatley et al., 623/002.17; US-6174331, 20010100, Moe et al.; US-6283994, 20010900, Moe et al., 062/002.12; US-6338740, 20020100, Carpentier, 623/002.13; US-6395025, 20020500, Fordenbacher et al., 623/002.28; US-6454798, 20020900, Moe, 623/002.12; US-6478819, 20021100, Moe, 623/002.18