초록 ▼

A composition for washing keratin materials combines in a cosmetically acceptable medium: i) at least one anionic, amphoteric or nonionic detergent surfactant; ii) at least 1.5% by weight, relative to the total weight of the composition, of a nacreous and/or opacifying agent; and iii) at least

A composition for washing keratin materials combines in a cosmetically acceptable medium: i) at least one anionic, amphoteric or nonionic detergent surfactant; ii) at least 1.5% by weight, relative to the total weight of the composition, of a nacreous and/or opacifying agent; and iii) at least one acrylic terpolymer made from a monomer (a) chosen from a C1-C6alkyl acrylate and a C1-C6alkyl methacrylate; of a monomer (b) chosen from a heterocyclic vinyl compound containing at least one nitrogen or sulphur atom, a (meth)acrylamide, a mono- or di(C1-C4)alkylamino(C1-C4)alkyl (meth)acrylate and a mono- or di(C1-C4)alkylamino(C1-C4)alkyl(meth)acrylamide; of a monomer (c) chosen from a urethane produced by reaction between a monoethylenic unsaturated isocyanate and a nonionic surfactant, a copolymerizable ethylenic surfactant monomer, a surfactant monomer of urea type, an allyl ether containing alkylenoxy groups and a nonionic monomer of urethane type.

대표청구항 ▼

A composition for washing keratin materials combines in a cosmetically acceptable medium: i) at least one anionic, amphoteric or nonionic detergent surfactant; ii) at least 1.5% by weight, relative to the total weight of the composition, of a nacreous and/or opacifying agent; and iii) at least

A composition for washing keratin materials combines in a cosmetically acceptable medium: i) at least one anionic, amphoteric or nonionic detergent surfactant; ii) at least 1.5% by weight, relative to the total weight of the composition, of a nacreous and/or opacifying agent; and iii) at least one acrylic terpolymer made from a monomer (a) chosen from a C1-C6alkyl acrylate and a C1-C6alkyl methacrylate; of a monomer (b) chosen from a heterocyclic vinyl compound containing at least one nitrogen or sulphur atom, a (meth)acrylamide, a mono- or di(C1-C4)alkylamino(C1-C4)alkyl (meth)acrylate and a mono- or di(C1-C4)alkylamino(C1-C4)alkyl(meth)acrylamide; of a monomer (c) chosen from a urethane produced by reaction between a monoethylenic unsaturated isocyanate and a nonionic surfactant, a copolymerizable ethylenic surfactant monomer, a surfactant monomer of urea type, an allyl ether containing alkylenoxy groups and a nonionic monomer of urethane type. polysilicon layer or the SOG layer. Next, this low-temperature polysilicon layer or SOG layer is removed from the surface by polishing. At this time, the filled in portion of depression on the wafer surface remains. As a result, the surface of the dielectric isolated wafer can be flattened.