초록 ▼

A compound collector double heterojunction bipolar transistor (CCHBT) incorporates a collector comprising two layers: a wide bandgap collector region (e.g., GaAs), and a narrow bandgap collector region (e.g., InGaP). The higher electric field is supported in the wide bandgap region, thereby increasi

A compound collector double heterojunction bipolar transistor (CCHBT) incorporates a collector comprising two layers: a wide bandgap collector region (e.g., GaAs), and a narrow bandgap collector region (e.g., InGaP). The higher electric field is supported in the wide bandgap region, thereby increasing breakdown voltage and reducing offset voltage. At the same time, the use of wide bandgap material in the depleted portion of the collector, and a higher mobility material toward the end and outside of the depletion region, reduces series resistance as well as knee voltage.

대표청구항 ▼

1. A heterojunction bipolar transistor comprising: a sub-collector; a collector, including a wide bandgap semiconductor material, having a thickness and a breakdown field, and a narrow bandgap semiconductor material, having a breakdown field, such that said wide bandgap material is in contact wi

1. A heterojunction bipolar transistor comprising: a sub-collector; a collector, including a wide bandgap semiconductor material, having a thickness and a breakdown field, and a narrow bandgap semiconductor material, having a breakdown field, such that said wide bandgap material is in contact with said narrow bandgap material and such that said breakdown field of said wide bandgap material is greater than said breakdown field of said narrow bandgap material; a base; a base-collector depletion region being associated therewith, wherein said thickness of said wide bandgap-material is less than the depletion region; a transition region provided between said wide bandgap material and said base to smooth the transition between said collector and said base; an emitter; a spacer provided on said emitter; and a cap layer. 2. The heterojunction bipolar transistor of claim 1, wherein said narrow bandgap material has a higher mobility than that of said wide bandgap material. 3. The heterojunction bipolar transistor of claim 1, wherein said wide bandgap material is fully depleted, and said narrow bandgap material is partially depleted. 4. The heterojunction bipolar transistor of claim 1, wherein said wide bandgap material and said narrow bandgap material comprise group III-V semiconductors. 5. The heterojunction bipolar transistor of claim 1, wherein said wide bandgap material and said narrow bandgap material are selected from the group consisting of group IV and group II-VI semiconductors. 6. The heterojunction bipolar transistor of claim 3, wherein said wide bandgap material comprises InGaP, and said narrow bandgap material comprises GaAs. 7. The heterojunction bipolar transistor of claim 3, wherein said wide bandgap material has a thickness of about 2650 angstroms, said narrow bandgap material has a thickness of about 4000 angstroms, and the depletion region is greater than about 2650 angstroms. 8. The heterojunction bipolar transistor of claim 1, wherein said transition region further comprises: a spacer; and a doping spike. 9. The heterojunction bipolar transistor of claim 1, wherein said cap layer comprises InGaAs. 10. The heterojunction bipolar transistor of claim 1, wherein said sub-collector comprises GaAs. 11. The heterojunction bipolar transistor of claim 1, wherein said transition region spacer and said emitter spacer comprise GaAs.