초록 ▼

A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure and an electrode structure is presented. The ferroelectric layer structure comprises a number of ferroelectric layers and a number of intermediate buffer layers arranged in an alternating manner.

A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure and an electrode structure is presented. The ferroelectric layer structure comprises a number of ferroelectric layers and a number of intermediate buffer layers arranged in an alternating manner. At least a first and a second layer of the ferroelectric layers have different Curie temperatures, i.e. the dielectric constant of the first ferroelectric layer has a maximum at a temperature which is different from the temperature at which the dielectric constant of the second ferroelectric layer has a maximum.

대표청구항 ▼

A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure and an electrode structure is presented. The ferroelectric layer structure comprises a number of ferroelectric layers and a number of intermediate buffer layers arranged in an alternating manner.

A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure and an electrode structure is presented. The ferroelectric layer structure comprises a number of ferroelectric layers and a number of intermediate buffer layers arranged in an alternating manner. At least a first and a second layer of the ferroelectric layers have different Curie temperatures, i.e. the dielectric constant of the first ferroelectric layer has a maximum at a temperature which is different from the temperature at which the dielectric constant of the second ferroelectric layer has a maximum. ppl. Phys., vol. 27, No. 11, pp. L2210-L2212, "Ultraclean Technique for Silicon Wafer Surfaces with HNO3-HF Systems", Nov. 1998. R. Stengl, et al., Jpn. J. Appl. Phys., vol. 29, No. 12, pp. L2311-L2314, "Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom Environment", Dec. 1988. Takao Abe, et al., Jpn. J. Appl. Phys., vol. 29, No. 12, pp. L2311-L2314, "Silicon Wafer Bonding Mechanism for Silicon-on-Insulator Structures", Dec. 1990. W.K. Chu, et al., Physical Review B, vol. 16, No. 9, pp. 3851-3859, "Distribution of Irradiation Damage in Silicon Bombarded with Hydrogen", Nov. 1, 1977. Yasushiro Nishioka, et al., Appl. Phys. Lett., vol. 54, No. 12, pp. 1127-1129, "Dielectric Characteristics of Fluorinated Ultradry SiO2", Mar. 20, 1999. D. Kouvatsos, et al., Appl. Phys. Lett., vol. 61, No. 7, pp. 780-782, "Silicon-Fluo