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A method for manufacturing a bonded wafer, in which when a bonded wafer is manufactured using an ion implantation separation method, impurities attached in the ion implantation step can be removed effectively, and less failure called a void is generated on the bonding surface. Impurities such as par

A method for manufacturing a bonded wafer, in which when a bonded wafer is manufactured using an ion implantation separation method, impurities attached in the ion implantation step can be removed effectively, and less failure called a void is generated on the bonding surface. Impurities such as particles or organic substances attached in ion implantation step (c) are removed using a physical removal method (d). The surface of a first wafer (1) subjected to impurities removal is closely contacted onto the surface of a second wafer (2) for heat treatment (e). The first wafer is separated in a thin-film form at a micro bubble layer (f).

대표청구항 ▼

1. A method for manufacturing a bonded wafer comprising: implanting at least one of hydrogen ions and rare gas ions from a surface of a first wafer to form a micro bubble layer in the first wafer; physically removing impurities attached onto the surface of the first wafer to which the ions are i

1. A method for manufacturing a bonded wafer comprising: implanting at least one of hydrogen ions and rare gas ions from a surface of a first wafer to form a micro bubble layer in the first wafer; physically removing impurities attached onto the surface of the first wafer to which the ions are implanted; and separating the first wafer in a thin-film form at said micro bubble layer by adding heat treatment to the surface of the first wafer subjected to the removal of impurities in close contact with a surface of a second wafer. 2. The method for manufacturing a bonded wafer according to claim 1, wherein chemical and mechanical polishing or CMP is performed for physically removing impurities. 3. The method for manufacturing a bonded wafer according to claim 1, wherein said first wafer is a silicon wafer, and before implanting ions to the silicon wafer, a silicon oxide film is formed previously on the surface of the silicon wafer. 4. The method for manufacturing a bonded wafer according to claim 1, wherein said second wafer is a silicon wafer, and the silicon oxide film is formed previously on the surface of the silicon wafer closely contacted onto said first wafer. 5. The method for manufacturing a bonded wafer according to claim 2, wherein said first wafer is a silicon wafer, and before implanting ions to the silicon wafer, a silicon oxide film is formed previously on the surface of the silicon wafer. 6. The method for manufacturing a bonded wafer according to claim 2, wherein said second wafer is a silicon wafer, and the silicon oxide film is formed previously on the surface of the silicon wafer closely contacted onto said first wafer. 7. The method for manufacturing a bonded wafer according to claim 3, wherein said second wafer is a silicon wafer, and the silicon oxide film is formed previously on the surface of the silicon wafer closely contacted onto said first wafer. 8. The method for manufacturing a bonded wafer according to claim 5, wherein said second wafer is a silicon wafer, and the silicon oxide film is formed previously on the surface of the silicon wafer closely contacted onto said first wafer.