초록 ▼

A spinner apparatus for manufacturing a photomask, performing a developing process for forming a resist pattern on a specific substrate, and performing an etching process in which a resist pattern is used as an etching mask are provided. A plurality of supply nozzles for supplying a developing solut

A spinner apparatus for manufacturing a photomask, performing a developing process for forming a resist pattern on a specific substrate, and performing an etching process in which a resist pattern is used as an etching mask are provided. A plurality of supply nozzles for supplying a developing solution or an etching solution are provided above the substrate on which processes will be performed and processing conditions such as the temperature and flux of the chemicals supplied from each supply nozzle are independently controlled. Accordingly, it is possible to control the deviation of the critical dimensions of the device.

대표청구항 ▼

1. A method for forming a pattern, comprising: sequentially forming an etched material layer to be etched and a pattern forming material layer on a substrate; performing an exposing process to define a pattern on the pattern forming material layer; loading the substrate on a rotating member in

1. A method for forming a pattern, comprising: sequentially forming an etched material layer to be etched and a pattern forming material layer on a substrate; performing an exposing process to define a pattern on the pattern forming material layer; loading the substrate on a rotating member in a processing chamber in which a processing temperature is controlled; providing a plurality of supply nozzles at a plurality of positions above the substrate, said supply nozzles providing a developing solution, the temperature of the developing solution of each of the plurality of supply nozzles being independently controlled; developing and removing part of the pattern forming material layer on which the exposing process is performed by rotating the substrate and vertically and downwardly flowing the developing solution from the plurality of supply nozzles above the substrate; measuring a critical dimension (CD) in each of a plurality of positions on the substrate with respect to the pattern formed by removing part of the pattern forming material layer; and controlling the temperature of the developing solution supplied from each position above the substrate on the basis of the result of the measured CDs. 2. The method of claim 1, wherein the flux of the developing solution supplied to the substrate from each nozzle is independently controlled. 3. The method of claim 1, wherein the pattern is formed on a photomask formed of a light shielding layer as the etched material layer and an E-beam resist layer as the pattern forming material layer on a transparent substrate. 4. The method of claim 1, further comprising: loading the substrate in which part of the pattern forming material layer is removed on the rotating member in the processing chamber; and etching and removing part of the etched material layer by rotating the substrate and vertically and downwardly flowing an etching solution from the plurality of nozzles, the temperature of the etching solution from each nozzle being independently controlled. 5. A method for performing etching, comprising: forming an etching mask layer having a specific pattern on a substrate on which an etched material layer is formed; loading the substrate on which the etching mask layer is formed on a rotating member in a processing chamber in which a processing temperature is controlled; etching and removing part of the etched material layer by rotating the substrate and vertically and downwardly flowing an etching solution from a plurality of supply nozzles above the substrate, the temperature of the etching solution from each nozzle being independently controlled; measuring a critical dimension (CD) at each of a plurality of positions on the substrate with respect to the pattern of the etched material layer; and controlling the temperature of the etching solution supplied from above the substrate to each position on the basis of the result of the measured CD. 6. The method of claim 5, wherein the flux of the etching solution supplied to the substrate from each nozzle is independently controlled. 7. The method of claim 5, wherein the position of the plurality of supply nozzles is variable horizontally and vertically with respect to the substrate. 8. The method of claim 5, wherein the substrate is one selected from the group consisting of a semiconductor wafer, an LCD substrate, and an FPD substrate.