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특허 상세정보

Transparent conductive film of zinc oxide

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) B32B-009/00   
미국특허분류(USC) 428/702; 428/001.5; 428/001.51; 428/426; 428/432; 428/688; 428/689; 428/697; 428/704
출원번호 US-0920292 (2001-08-02)
우선권정보 JP-0234945 (2000-08-02)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Arent Fox Kintner Plotkin & Kahn, PLLC
인용정보 피인용 횟수 : 16  인용 특허 : 2
초록

An n-type dopant of at least one of elements of Group III such as Ga and the like and a p-type dopant of at least one of elements of Group V such as N and the like are doped to a ZnO crystalline layer as dopants, and the n-type dopant is more than the p-type dopant and doped into the ZnO layer in an impurity concentration of 1×1018cm-3or more. Therefore, it is possible to lower the resistivity of the ZnO layer with a degree of the transparency high and to obtain the transparent conductive film of zinc oxide having the electrical resistivity lower than IT...

대표
청구항

1. A transparent conductive film of zinc oxide, comprising: a zinc oxide layer, and dopants doped into said zinc oxide layer, wherein said dopants have an n-type dopant and a p-type dopant, and said n-type dopant is more than said p-type dopant and doped in an impurity concentration of 1×1018cm-3or more, wherein said n-type dopant is at least one kind of element selected from the group consisting of elements from Group IIIB or VIIB and said p-type dopant is at least one kind of element selected from the group consisting of elements of Group VB or I...

이 특허를 인용한 특허 피인용횟수: 16

  1. Bluhm, Martin E.; Silverman, Gary S.; Korotkov, Roman Y.. Chemical vapor deposition using N,O polydentate ligand complexes of metals. USP2016129528182.
  2. Osada, Kozo. Gallium oxide-zinc oxide sputtering target, method for forming transparent conductive film, and transparent conductive film. USP2010037682529.
  3. Osada, Kozo. Gallium oxide-zinc oxide sputtering target, method of forming transparent conductive film, and transparent conductive film. USP2010037686985.
  4. Osada, Kozo. Gallium oxide/zinc oxide sputtering target, method of forming transparent conductive film and transparent conductive film. USP2010037674404.
  5. Baba,Naoho; Fujii,Takafumi; Watanabe,Isao. Heat insulating container and manufacture method therefor. USP2006027005167.
  6. Huang,Wen Chieh. High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer. USP2006067061026.
  7. Gessert, Timothy A.; Duenow, Joel N.; Barnes, Teresa; Coutts, Timothy J.. High quality transparent conducting oxide thin films. USP2012088253012.
  8. Stricker, Jeffery L.; Smith, Ryan C.; Abrams, Michael B.; Korotkov, Roman Y.; Silverman, Gary S.; Sanderson, Kevin David; Ye, Liang; Gutiérrez, Guillermo Benito. Method of making low resisitivity doped zinc oxide coatings and the articles formed thereby. USP2012048163342.
  9. Barnes, Teresa M.; Burst, James. Thin film photovoltaic devices with a minimally conductive buffer layer. USP2016119496426.
  10. Gessert, Timothy A.; Yoshida, Yuki; Coutts, Timothy J.. Transparent conducting oxides and production thereof. USP2014068747630.
  11. Zhu,Furong; Guenther,Ewald Karl Michael; Chua,Soo Jin. Transparent electrode material for quality enhancement of OLED devices. USP2006087098591.
  12. Yamamuro, Tomofumi; Kato, Hiroyuki; Ogawa, Akio. Zinc oxide based compound semiconductor device. USP2013108546797.
  13. Ikisawa, Masakatsu; Yahagi, Masataka. Zinc oxide based transparent electric conductor, sputtering target for forming of the conductor and process for producing the target. USP2011088007693.
  14. Lu, Yicheng; Pasquier, Aurelien Du; Chen, Hanhong. Zinc oxide photoelectrodes and methods of fabrication. USP2014098835756.
  15. Ikisawa, Masakatsu; Yahagi, Masataka. Zinc oxide-based transparent conductor and sputtering target for forming the transparent conductor. USP2010047699965.
  16. Kadota, Michio; Miura, Toshinori. ZnO film, method for manufacturing the same, and luminescent element including the same. USP2004056733895.