초록 ▼

An n-type dopant of at least one of elements of Group III such as Ga and the like and a p-type dopant of at least one of elements of Group V such as N and the like are doped to a ZnO crystalline layer as dopants, and the n-type dopant is more than the p-type dopant and doped into the ZnO layer in an

An n-type dopant of at least one of elements of Group III such as Ga and the like and a p-type dopant of at least one of elements of Group V such as N and the like are doped to a ZnO crystalline layer as dopants, and the n-type dopant is more than the p-type dopant and doped into the ZnO layer in an impurity concentration of 1×1018cm-3or more. Therefore, it is possible to lower the resistivity of the ZnO layer with a degree of the transparency high and to obtain the transparent conductive film of zinc oxide having the electrical resistivity lower than ITO.

대표청구항 ▼

1. A transparent conductive film of zinc oxide, comprising: a zinc oxide layer, and dopants doped into said zinc oxide layer, wherein said dopants have an n-type dopant and a p-type dopant, and said n-type dopant is more than said p-type dopant and doped in an impurity concentration of 1×1018cm

1. A transparent conductive film of zinc oxide, comprising: a zinc oxide layer, and dopants doped into said zinc oxide layer, wherein said dopants have an n-type dopant and a p-type dopant, and said n-type dopant is more than said p-type dopant and doped in an impurity concentration of 1×1018cm-3or more, wherein said n-type dopant is at least one kind of element selected from the group consisting of elements from Group IIIB or VIIB and said p-type dopant is at least one kind of element selected from the group consisting of elements of Group VB or IA. 2. The transparent conductive film of claim 1, wherein said n-type dopant and said p-type dopant are doped into said zinc oxide layer in such a way that the ratio of said n-type dopant to said p-type dopant becomes (1.3-3):1. 3. The transparent conductive film of claim 1, wherein said n-type dopant and said p-type dopant, respectively, are doped into said zinc oxide layer in a concentration of 8×1018cm-3or more. 4. The transparent conductive film of claim 1, wherein a resistivity of said zinc oxide layer doped with said dopants is 1.1×10-4Ω·cm or less. 5. The transparent conductive film of claim 1, wherein said n-type dopant is gallium (Ga), and said p-type dopant is nitrogen (N). 6. A transparent conductive film of zinc oxide, comprising: a zinc oxide layer, and dopants doped into said zinc oxide layer, wherein said dopants have an n-type dopant and a p-type dopant, and said n-type dopant is more than said p-type dopant and doped in an impurity concentration of 1×1018cm-3or more, wherein said n-type dopant is at least one kind of element selected from the group consisting of elements of Group IIIB, and said p-type dopant is at least one kind of element selected from the group consisting of elements of Group VB. 7. A transparent conductive film of zinc oxide, comprising: a zinc oxide layer, and dopants doped into said zinc oxide layer, wherein said dopants have an n-type dopant and a p-type dopant, and said n-type dopant is more than said p-type dopant and doped in an impurity concentration of 1×1018cm-3or more, wherein said n-type dopant is at least one kind of element selected from the group consisting of elements of Group VIIB, and said p-type dopant is at least one kind of element selected from the group consisting of elements of Group IA.