Silicon light-emitting device and method for the production thereof
IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0913168
(2001-08-09)
|
우선권정보 |
FR-0001560 (1999-02-10) |
국제출원번호 |
PCT/FR00/00279
(2000-02-07)
|
국제공개번호 |
WO00/48275
(2000-08-17)
|
발명자
/ 주소 |
- Pautrat, Jean-Louis
- Ulmer, Helene
- Magnea, Noel
- Hadji, Emmanuel
|
출원인 / 주소 |
- Commissariat a l'Energie Atomique
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
8 인용 특허 :
4 |
초록
▼
The invention concerns a light emitting and guiding device comprising at least one active region (22) in silicon and the means for creating photons in the said active region. In accordance with the invention, the means for creating the photons comprise a diode (22c, 22d) formed in the active region.
The invention concerns a light emitting and guiding device comprising at least one active region (22) in silicon and the means for creating photons in the said active region. In accordance with the invention, the means for creating the photons comprise a diode (22c, 22d) formed in the active region. In addition, the device includes the means for confining the carriers injected by the diode, and the silicon in the active region is mono-crystalline.
대표청구항
▼
The invention concerns a light emitting and guiding device comprising at least one active region (22) in silicon and the means for creating photons in the said active region. In accordance with the invention, the means for creating the photons comprise a diode (22c, 22d) formed in the active region.
The invention concerns a light emitting and guiding device comprising at least one active region (22) in silicon and the means for creating photons in the said active region. In accordance with the invention, the means for creating the photons comprise a diode (22c, 22d) formed in the active region. In addition, the device includes the means for confining the carriers injected by the diode, and the silicon in the active region is mono-crystalline. -based container processed from polyester-based materials containing ethylene glycol linkages, said container not including added oxidizable polymers so that only the acetaldehyde, naturally formed during the processing of said polyester-based materials containing ethylene glycol linkages to form said container, undergoes oxidation in the side-walls of the container to form acetic acid, a beverage in the polyester-based container; and an oxidation catalyst incorporated within the polyester-based materials during the formation of the container, wherein the oxidation catalyst is incorporated in sufficient quantities such that the oxidation catalyst is active for the oxidation of acetaldehyde to acetic acid during both the filling and storage of the beverage in the container to thereby cause oxygen that permeates into the polyester container to react with the formed acetaldehyde in the container to convert said acetaldehyde to acetic acid thus preventing off taste, and reducing the amount of oxygen permeation into the container, thus increasing beverage shelf-life; said container being permeable to oxygen and acetaldehyde in the absence of said active oxygen catalyst, wherein said container is a mono-layer construction with the catalyst dispersed throughout sidewalls of the container, the sidewalls being in direct contact with the beverage. 9. The bottled beverage of claim 8, wherein the polyester-based container is a polyethylene terephthalate container. 10. The bottled beverage of claim 8, wherein the oxidation catalyst is a cobalt or a manganese salt. 11. The bottled beverage of claim 8, wherein the oxidation catalyst is a compound comprising an amine, a phosphine or an alcohol. 12. The bottled beverage of claim 8, wherein the oxidation catalyst is added to the polyester during injection or extrusion molding of the container. 13. The bottled beverage of claim 8, wherein the oxidation catalyst is present in the polyester in an amount of 1-500 ppm. 14. The bottled beverage of claim 13, wherein the oxidation catalyst is present in the polyester in an amount of 5-50 ppm. 15. The bottled beverage of claim 8, wherein the beverage is water. 16. The bottled beverage of claim 8, wherein the concentration of acetaldehyde in the beverage is less than 40 ppb. 17. The bottled beverage of claim 16, wherein the concentration of acetaldehyde in the beverage is less than 25 ppb. 18. The bottled beverage of claim 8, wherein the concentration of acetic acid in the beverage is less than 40 ppm. 19. The bottled beverage of claim 18, wherein the concentration of acetic acid in the beverage is less than 25 ppm.
이 특허에 인용된 특허 (4)
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Bruce Allan J. (Westfield NJ) Grodkiewicz William H. (Glen Gardner NJ) Nykolak Gerald (Long Island NY) Shmulovich Joseph (Murray Hill NJ) Wong Yiu-Huen (Summit NJ), Erbium-doped planar optical device.
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Benton Janet L. (Warren NJ) Jacobson Dale C. (Hackettstown NJ) Kimerling Lionel C. (Cambridge MA) Michel Jurgen (Cambridge MA) Poate John M. (Summit NJ), Optical waveguide system comprising a rare-earth Si-based optical device.
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Brown Thomas G., Phonon resonator and method for its production.
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Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
이 특허를 인용한 특허 (8)
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Takeuchi, Tetsuya; Uchida, Tatsuro; Ikuta, Mitsuhiro, Emitting device and manufacturing method therefor.
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Augusto, Andre Filipe Rodrigues; Herasimenka, Stanislau; Bowden, Stuart, Flexible silicon infrared emitter.
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Kawaguchi, Kenichi, Light emitting device and semiconductor device.
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Streubel, Klaus; Wirth, Ralph, Luminescent diode chip with luminescence conversion element and angular filter element.
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Christiansen, Silke H.; Grill, Alfred; Mooney, Patricia M., Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same.
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Hosono,Hideo; Ota,Hiromichi; Orita,Masahiro; Ueda,Kazushige; Hirano,Masahiro; Kamiya,Toshio, Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film.
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Saito, Shinichi; Aoki, Masahiro; Uchiyama, Hiroyuki; Arimoto, Hideo; Sakuma, Noriyuki; Yamamoto, Jiro, Semiconductor device.
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Saito, Shinichi; Hisamoto, Digh; Arai, Tadashi; Onai, Takahiro, Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method.
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