초록 ▼

A solder alloy containing indium, lead, silver and copper as its alloying constituents, and a soldering process employing the solder alloy. The solder alloy consists essentially of, by weight, about 50% to about 65% indium, about 0.5% to about 3.0% silver, up to about 3.0% copper, the balance lead a

A solder alloy containing indium, lead, silver and copper as its alloying constituents, and a soldering process employing the solder alloy. The solder alloy consists essentially of, by weight, about 50% to about 65% indium, about 0.5% to about 3.0% silver, up to about 3.0% copper, the balance lead and incidental impurities. The alloy preferably has a solidus temperature in a range of about 173° C. to about 178° C., and a liquidus temperature in a range of about 187° C. to about 196° C. As such, the alloy can be used in a reflow process with a peak reflow temperature of about 220° C. to about 240° C., and is therefore compatible with most circuit components and can be simultaneously reflowed with 63Sn-37Pb solder.

대표청구항 ▼

1. A solder alloy consisting essentially of, by weight, about 50% to about 65% indium, about 0.5% to about 3.0% silver, 0.0% to about 3.0% copper, the balance lead and incidental impurities. 2. A solder alloy according to claim 1, wherein the solder alloy has a solidus temperature in a range of abou

1. A solder alloy consisting essentially of, by weight, about 50% to about 65% indium, about 0.5% to about 3.0% silver, 0.0% to about 3.0% copper, the balance lead and incidental impurities. 2. A solder alloy according to claim 1, wherein the solder alloy has a solidus temperature in a range of about 173° C. to about 178° C. 3. A solder alloy according to claim 1, wherein the solder alloy has a liquidus temperature in a range of about 187° C. to about 196° C. 4. A solder alloy according to claim 1, wherein the silver content is about 1.0 to about 2.0 weight percent of the solder alloy, and the copper content is about 1.0 to about 2.0 weight percent of the solder alloy. 5. A solder alloy according to claim 1,wherein the silver content is about 1.0 weight percent of the solder alloy, and the copper content is about 0.5 to about 2.0 weight percent of the solder alloy. 6. A solder alloy according to claim 1,wherein the silver content is about 2.0 weight percent of the solder alloy, and the copper content is up to about 2.0 weight percent of the solder alloy. 7. A solder alloy according to claim 1, wherein the indium content is about 53.5% to about 54.5 weight percent of the solder alloy. 8. A solder alloy according to claim 1, wherein the solder alloy is in the form of a solder bump on an interconnect pad of an integrated circuit device. 9. A solder alloy according to claim 8, wherein the solder bump comprises a layer of silver-indium and/or copper-indium intermetallic compound contacting the interconnect pad. 10. A solder alloy according to claim 1, wherein the solder alloy is in the form of a solder joint that metallurgically joins an interconnect pad of an integrated circuit device to a metal trace on a laminate substrate so as to attach the integrated circuit device to the laminate substrate. 11. A solder bump formed of a solder alloy consisting of, by weight, 50% to 65% indium, 0.5% to 3.0% silver, 0.0% to 3.0% copper, the balance lead and incidental impurities, the solder alloy having a solidus temperature in a range of about 173° C. to about 178° C. and a liquidus temperature in a range of about 187° C. to about 196° C. 12. A solder bump according to claim 11, wherein the silver content is about 1.0 to about 2.0 weight percent of the solder alloy, and the copper content is about 1.0 to about 2.0 weight percent of the solder alloy. 13. A solder bump according to claim 11, wherein the silver content is about 1.0 weight percent of the solder alloy, and the copper content is about 0.5 to about 2.0 weight percent of the solder alloy. 14. A solder bump according to claim 11, wherein the silver content is about 2.0 weight percent of the solder alloy, and the copper content is up to about 2.0 weight percent of the solder alloy. 15. A solder bump according to claim 11, wherein the indium content is about 53.5% to about 54.5 weight percent of the solder alloy. 16. A solder bump according to claim 11, wherein the solder bump is on an interconnect pad of an integrated circuit device, the solder bump comprising a layer of silver-indium and/or copper-indium intermetallic compound contacting the interconnect pad. 17. A solder bump according to claim 11, wherein the solder bump is in the form of a solder joint that metallurgically joins an interconnect pad of a flip chip to a metal trace on a laminate substrate so as to attach the flip chip to the laminate substrate, the solder joint comprising a layer of silver-indium and/or copper-indium intermetallic compound contacting the interconnect pad.