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A sensor is provided for the determination of various concentrations of one or more components within a fluid sample. The sensor includes an injection molded body, at least two electrodes, an enzyme, and if desired, an electron transfer mediator. The body includes a reaction zone for receiving a flu

A sensor is provided for the determination of various concentrations of one or more components within a fluid sample. The sensor includes an injection molded body, at least two electrodes, an enzyme, and if desired, an electron transfer mediator. The body includes a reaction zone for receiving a fluid sample. The electrodes are at least partially embedded within the plastic body and extend into the reaction zone. Also contained within the reaction zone is an enzyme capable of catalyzing a reaction involving a compound within the fluid sample. Additionally, the sensor incorporates fill detection which activates a meter, attached to the sensor, for measuring the electrochemical changes occurring in the reaction zone.

대표청구항 ▼

A sensor is provided for the determination of various concentrations of one or more components within a fluid sample. The sensor includes an injection molded body, at least two electrodes, an enzyme, and if desired, an electron transfer mediator. The body includes a reaction zone for receiving a flu

A sensor is provided for the determination of various concentrations of one or more components within a fluid sample. The sensor includes an injection molded body, at least two electrodes, an enzyme, and if desired, an electron transfer mediator. The body includes a reaction zone for receiving a fluid sample. The electrodes are at least partially embedded within the plastic body and extend into the reaction zone. Also contained within the reaction zone is an enzyme capable of catalyzing a reaction involving a compound within the fluid sample. Additionally, the sensor incorporates fill detection which activates a meter, attached to the sensor, for measuring the electrochemical changes occurring in the reaction zone. processing chamber; a base within said chamber for supporting said workpiece during processing thereof; a semiconductor window electrode overlying said base; a gas inlet system for admitting a plasma precursor gas into said chamber; an electrical terminal coupled to said semiconductor window electrode; an inductive antenna adjacent one side of said semiconductor window electrode opposite said base for coupling power into the interior of said chamber through said semiconductor window electrode; a plasma source RF power generator coupled to said inductive antenna for supplying power for said inductive field; and a plasma bias RF power generator coupled to said workpiece, wherein said electrical terminal of said semiconductor window electrode is connected to a counter potential of said bias RF power generator. 3. The plasma of claim 2 wherein said counter potential of said bias RF power generator is ground. 4. A plasma reactor for processing a workpiece, said reactor comprising: a reactor enclosure defining a processing chamber; a base within said chamber for supporting said workpiece during processing thereof; a semiconductor window electrode overlying said base; a gas inlet system for admitting a plasma precursor gas into said chamber; an electrical terminal coupled to said semiconductor window electrode; an inductive antenna adjacent one side of said semiconductor window electrode opposite said base for coupling power into the interior of said chamber through said semiconductor window electrode; wherein said workpiece is a planar substrate, said semiconductor window electrode comprises a ceiling portion of said reactor enclosure substantially parallel to and overlying said planar substrate, and said inductive antenna overlies said ceiling portion and faces said planar substrate through said semiconductor window electrode; a power splitter having one output coupled to said semiconductor window electrode and another output coupled to said substrate and an input for receiving power from a common source; and wherein said ceiling portion is one of: (a) planar, and (b) dome-shaped. 5. A plasma reactor for processing a workpiece, said reactor comprising: a reactor enclosure defining a processing chamber; a base within said chamber for supporting said workpiece during processing thereof; a semiconductor window electrode overlying said base; a gas inlet system for admitting a plasma precursor gas into said chamber; an electrical terminal coupled to said semiconductor window electrode; an inductive antenna adjacent one side of said semiconductor window electrode opposite said base for coupling power into the interior of said chamber through said semiconductor window electrode; wherein said workpiece is a planar substrate, said semiconductor window electrode comprises a ceiling portion of said reactor enclosure substantially parallel to and overlying said planar substrate, and said inductive antenna overlies said ceiling portion and faces said planar substrate through said semiconductor window electrode; a first power source coupled to said semiconductor window electrode and a second power source coupled to said planar substrate; and wherein said ceiling portion is one of: (a) planar, and (b) dome-shaped. 6. A plasma reactor for processing a workpiece, said reactor comprising: a reactor enclosure defining a processing chamber; a base within said chamber for supporting said workpiece during processing thereof; a semiconductor window electrode overlying said base; a gas inlet system for admitting a plasma precursor gas into said chamber; an electrical terminal coupled to said semiconductor window electrode; an inductive antenna adjacent one side of said semiconductor window electrode opposite said base for coupling power into the interior of said chamber through said semiconductor window electrode; wherein said workpiece is a planar substrate, said semiconductor window electrode comprise s a ceiling portion of said reactor enclosure substantially parallel to and overlying said planar substrate, and said inductive antenna overlies said ceiling portion and faces said planar substrate through said semiconductor window electrode; wherein said inductive antenna comprises an inner antenna portion overlying a center of said planar substrate and an outer antenna portion overlying a periphery of said planar substrate and electrically separated from said inner antenna portion, said reactor further comprising: a first power source node coupled to said inner antenna portion; a second power source node coupled to said outer antenna portion; and wherein said ceiling portion is one of: (a) planar, and (b) dome-shaped. 7. A plasma reactor for processing a workpiece, said reactor comprising: a reactor enclosure defining a processing chamber; a base within said chamber for supporting said workpiece during processing thereof; a semiconductor window electrode overlying said base; a gas inlet system for admitting a plasma precursor gas into said chamber; an electrical terminal coupled to said semiconductor window electrode; an inductive antenna adjacent one side of said semiconductor window electrode opposite said base for coupling power into the interior of said chamber through said semiconductor window electrode; wherein said workpiece is a planar substrate, said semiconductor window electrode comprises a ceiling portion of said reactor enclosure substantially parallel to and overlying said planar substrate, and said inductive antenna overlies said ceiling portion and faces said planar substrate through said semiconductor window electrode; a power splitter having one output coupled to said planar substrate and another output coupled to said inductive antenna and an input for receiving power from a common source; and wherein said electrical terminal of said semiconductor window electrode is connected to RF ground. 8. A plasma reactor for processing a workpiece, said reactor comprising: a reactor enclosure defining a processing chamber; a base within said chamber for supporting said workpiece during processing thereof; a semiconductor window electrode overlying said base; a gas inlet system for admitting a plasma precursor gas into said chamber; an electrical terminal coupled to said semiconductor window electrode; an inductive antenna adjacent one side of said semiconductor window electrode opposite said base for coupling power into the interior of said chamber through said semiconductor window electrode; wherein said workpiece is a planar substrate, said semiconductor window electrode comprises a ceiling portion of said reactor enclosure substantially parallel to and overlying said planar substrate, and said inductive antenna overlies said ceiling portion and faces said planar substrate through said semiconductor window electrode; a power splitter having one output coupled to said planar substrate and another output coupled to said inductive antenna and an input for receiving power from a common source; and wherein said ceiling portion is one of: (a) planar, and (b) dome-shaped. 9. A plasma reactor for processing a workpiece, said reactor comprising: a reactor enclosure defining a processing chamber; a base within said chamber for supporting said workpiece during processing thereof; a semiconductor window electrode overlying said base; a gas inlet system for admitting a plasma precursor gas into said chamber; an electrical terminal coupled to said semiconductor window electrode; an inductive antenna adjacent one side of said semiconductor window electrode opposite said base for coupling power into the interior of said chamber through said semiconductor window electrode; wherein said semiconductor workpiece is a planar substrate, said semiconductor window electrode comprises a sidewall portion of said reactor enclosure substantially perpendicular to and surrounding a periphery of s aid substrate and said inductive antenna is adjacent said sidewall portion; a bias RF power source coupled to said planar substrate, said electrical terminal of said semiconductor electrode being connected so as to enable said semiconductor window electrode to be a counter electrode to the bias RF power source coupled to said planar substrate; and wherein said electrical terminal of said semiconductor window electrode is connected to ground to provide a ground plane for said planar substrate. 10. A plasma reactor for processing a workpiece, said reactor comprising: a reactor enclosure defining a processing chamber; a base within said chamber for supporting said workpiece during processing thereof; a semiconductor window electrode overlying said base; a gas inlet system for admitting a plasma precursor gas into said chamber; an electrical terminal coupled to said semiconductor window electrode; an inductive antenna adjacent one side of said semiconductor window electrode opposite said base for coupling power into the interior of said chamber through said semiconductor window electrode; wherein said semiconductor workpiece is a planar substrate, said semiconductor window electrode comprises a sidewall portion of said reactor enclosure substantially perpendicular to and surrounding a periphery of said substrate and said inductive antenna is adjacent said sidewall portion; a power splitter having one output coupled to said semiconductor window electrode and another output coupled to said planar substrate and an input for receiving power from a common source; and a plasma source RF power generator coupled to said inductive antenna. 11. A plasma reactor for processing a workpiece, said reactor comprising: a reactor enclosure defining a processing chamber; a base within said chamber for supporting said workpiece during processing thereof; a semiconductor window electrode overlying said base; a gas inlet system for admitting a plasma precursor gas into said chamber; an electrical terminal coupled to said semiconductor window electrode; an inductive antenna adjacent one side of said semiconductor window electrode opposite said base for coupling power into the interior of said chamber through said semiconductor window electrode; wherein said semiconductor workpiece is a planar substrate, said semiconductor window electrode comprises a sidewall portion of said reactor enclosure substantially perpendicular to and surrounding a periphery of said substrate and said inductive antenna is adjacent said sidewall portion; a power splitter having one output coupled to said semiconductor window electrode and another output coupled to said inductive antenna and an input for receiving power from a common source; and a bias RF power generator coupled to said planar substrate. 12. A plasma reactor for processing a workpiece, said reactor comprising: a reactor enclosure defining a processing chamber; a base within said chamber for supporting said workpiece during processing thereof; a semiconductor window electrode overlying said base; a gas inlet system for admitting a plasma precursor gas into said chamber; an electrical terminal coupled to said semiconductor window electrode; an inductive antenna adjacent one side of said semiconductor window electrode opposite said base for coupling power into the interior of said chamber through said semiconductor window electrode; wherein said semiconductor workpiece is a planar substrate, said semiconductor window electrode comprises a sidewall portion of said reactor enclosure substantially perpendicular to and surrounding a periphery of said substrate and said inductive antenna is adjacent said sidewall portion; a power splitter having one output coupled to said planar substrate and another output coupled to said inductive antenna and an input for receiving power from a common source; and wherein said electrical terminal of said semiconductor window electrode is connect ed to RF ground. 13. A plasma reactor for processing a workpiece, said reactor comprising: a reactor enclosure defining a processing chamber; a base within said chamber for supporting said workpiece during processing thereof; a semiconductor window electrode overlying said base; a gas inlet system for admitting a plasma precursor gas into said chamber; an electrical terminal coupled to said semiconductor window electrode; an inductive antenna adjacent one side of said semiconductor window electrode opposite said base for coupling power into the interior of said chamber through said semiconductor window electrode; wherein said semiconductor workpiece is a planar substrate, said semiconductor window electrode comprises a sidewall portion of said reactor enclosure substantially perpendicular to and surrounding a periphery of said substrate and said inductive antenna is adjacent said sidewall portion; a power splitter having one output coupled to said planar substrate and another output coupled to said inductive antenna and an input for receiving power from a common source; and an independent RF power generator coupled to said electrical terminal of said semiconductor window. 14. A plasma reactor for processing a workpiece, said reactor comprising: a reactor enclosure defining a processing chamber; a base within said chamber for supporting said workpiece during processing thereof; a semiconductor window electrode overlying said base; a gas inlet system for admitting a plasma precursor gas into said chamber; an electrical terminal coupled to said semiconductor window electrode; an inductive antenna adjacent one side of said semiconductor window electrode opposite said base for coupling power into the interior of said chamber; wherein said workpiece is a planar substrate, said semiconductor window electrode comprises a ceiling portion of said reactor enclosure substantially parallel to and overlying said planar substrate, and said inductive antenna overlies said ceiling portion and faces said planar substrate through said semiconductor window electrode; a side semiconductor window electrode plate comprising a sidewall portion of said reactor enclosure substantially perpendicular to and surrounding a periphery of said substrate; a side inductive antenna element adjacent said sidewall portion; and a bias RF power source coupled to said substrate, said electrical terminal of said semiconductor window electrode being connected so as to enable said semiconductor window electrode to be a counter electrode to the bias RF power source coupled to said substrate. 15. The plasma reactor of claim 14 wherein said electrical terminal of said semiconductor window electrode is connected to ground to provide a ground plane parallel to and over said planar substrate. 16. The reactor of claim 14 wherein said ceiling portion is one of: (a) planar, and (b) dome-shaped. 17. A plasma reactor for processing a workpiece, said reactor comprising: a reactor enclosure defining a processing chamber; a base within said chamber for supporting said workpiece during processing thereof; a semiconductor window electrode overlying said base; a gas inlet system for admitting a plasma precursor gas into said chamber; an electrical terminal coupled to said semiconductor window electrode; an inductive antenna adjacent one side of said semiconductor window electrode opposite said base for coupling power into the interior of said chamber through said semiconductor window electrode; wherein said workpiece is a planar substrate, said semiconductor window electrode comprises a ceiling portion of said reactor enclosure substantially parallel to and overlying said planar substrate, and said inductive antenna overlies said ceiling portion and faces said planar substrate through said semiconductor window electrode; a side semiconductor window electrode plate comprising a sidewall portion of said reactor enclosure substantially perpendic ular to and surrounding a periphery of said substrate; a side inductive antenna element adjacent said sidewall portion; and a power splitter having one output coupled to said semiconductor window electrode and another output coupled to said substrate and an input for receiving power from a common source. 18. The reactor of claim 17 wherein said ceiling portion is one of: (a) planar, and (b) dome-shaped. 19. A plasma reactor for processing a workpiece, said reactor comprising: a reactor enclosure defining a processing chamber; a base within said chamber for supporting said workpiece during processing thereof; a semiconductor window electrode overlying said base; a gas inlet system for admitting a plasma precursor gas into said chamber; an electrical terminal coupled to said semiconductor window electrode; an inductive antenna adjacent one side of said semiconductor window electrode opposite said base for coupling power into the interior of said chamber through said semiconductor window electrode; wherein said workpiece is a planar substrate, said semiconductor window electrode comprises a ceiling portion of said reactor enclosure substantially parallel to and overlying said planar substrate, and said inductive antenna overlies said ceiling portion and faces said planar substrate through said semiconductor window electrode; a side semiconductor window electrode plate comprising a sidewall portion of said reactor enclosure substantially perpendicular to and surrounding a periphery of said substrate; a side inductive antenna element adjacent said sidewall portion; and a first power source coupled to said semiconductor window electrode and a second power source coupled to said planar substrate. 20. The reactor of claim 19 wherein said ceiling portion is one of: (a) planar, and (b) dome-shaped. 21. A plasma reactor for processing a workpiece, said reactor comprising: a reactor enclosure defining a processing chamber; a base within said chamber for supporting said workpiece during processing thereof; a semiconductor window electrode overlying said base; a gas inlet system for admitting a plasma precursor gas into said chamber; an electrical terminal coupled to said semiconductor window electrode; an inductive antenna adjacent one side of said semiconductor window electrode opposite said base for coupling power into the interior of said chamber through said semiconductor window electrode; wherein said workpiece is a planar substrate, said semiconductor window electrode comprises a ceiling portion of said reactor enclosure substantially parallel to and overlying said planar substrate, and said inductive antenna overlies said ceiling portion and faces said planar substrate through said semiconductor window electrode; wherein said inductive antenna comprises an inner antenna portion overlying a center of said planar substrate and an outer antenna portion overlying a periphery of said planar substrate and electrically separated from said inner antenna portion, said reactor further comprising: a first power source node coupled to said inner antenna portion; and a second power source node coupled to said outer antenna portion; and a power splitter having one output coupled to said first power source node of said inner inductive antenna portion and another output coupled to said second power source node of said outer inductive antenna portion, and an input for receiving power from a common source. 22. The reactor of claim 21 wherein said ceiling portion is one of: (a) planar, and (b) dome-shaped. 23. A plasma reactor for processing a workpiece, said reactor comprising: a reactor enclosure defining a processing chamber; a base within said chamber for supporting said workpiece during processing thereof; a semiconductor window electrode overlying said base; a gas inlet system for admitting a plasma precursor gas into said chamber; an electrical terminal coupled to said semiconductor wi