초록 ▼

A semiconductor inductor and a method for making a semiconductor inductor are provided. An oxide layer disposed over a substrate is etched to form an interconnect metallization trench within the oxide layer. The oxide layer is also etched to form a first inductor trench within the oxide layer such t

A semiconductor inductor and a method for making a semiconductor inductor are provided. An oxide layer disposed over a substrate is etched to form an interconnect metallization trench within the oxide layer. The oxide layer is also etched to form a first inductor trench within the oxide layer such that the first inductor trench is defined in an inductor geometry. The oxide layer is then etched to form at least one via in the interconnect metallization trench and a second inductor trench over the first inductor trench in the oxide layer. The second inductor trench also has the inductor geometry. After the oxide layer is etched, the at least one via, the second inductor trench, the interconnect metallization trench and the first inductor trench are filled with copper. The semiconductor inductor is configured to have a low resistance and a high quality factor.

대표청구항 ▼

A semiconductor inductor and a method for making a semiconductor inductor are provided. An oxide layer disposed over a substrate is etched to form an interconnect metallization trench within the oxide layer. The oxide layer is also etched to form a first inductor trench within the oxide layer such t

A semiconductor inductor and a method for making a semiconductor inductor are provided. An oxide layer disposed over a substrate is etched to form an interconnect metallization trench within the oxide layer. The oxide layer is also etched to form a first inductor trench within the oxide layer such that the first inductor trench is defined in an inductor geometry. The oxide layer is then etched to form at least one via in the interconnect metallization trench and a second inductor trench over the first inductor trench in the oxide layer. The second inductor trench also has the inductor geometry. After the oxide layer is etched, the at least one via, the second inductor trench, the interconnect metallization trench and the first inductor trench are filled with copper. The semiconductor inductor is configured to have a low resistance and a high quality factor. om electrodes of the first capacitor and the second capacitor by forming a conductive layer within the first opening portion and the second opening portion; f) forming a dielectric layer on the bottom electrodes of the first capacitor and the second capacitor; and g) forming top electrodes of the first capacitor and the second capacitor on the dielectric layer. 5. The method of claim 4, wherein step e) includes the steps of: e1) forming the conductive layer on the second interlayer insulating layer including the first opening portion and the second portion; e2) forming an insulating layer pattern covering the conductive layer of the first opening portion; and e3) forming a bottom electrode of the first capacitor with in the first opening portion by removing the conductive layer until the surface of the second interlayer insulating layer is exposed, and forming a bottom electrode of the second capacitor within the second opening portion.