Highly conductive composite polysilicon gate for CMOS integrated circuits
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/3205
H01L-021/4763
출원번호
US-0964172
(2001-09-26)
발명자
/ 주소
Noble, Wendell P.
Forbes, Leonard
출원인 / 주소
Micron Technology, Inc.
대리인 / 주소
Schwegman, Lundberg, Woessner & Kluth, P.A.
인용정보
피인용 횟수 :
23인용 특허 :
104
초록▼
Many integrated circuits include a type of transistor known as a metal-oxide-semiconductor, field-effect transistor, or "mosfet," which has an insulated gate member that controls its operation. Early mosfets had aluminum gates. But because the aluminum made the mosfets unreliable and difficult to ma
Many integrated circuits include a type of transistor known as a metal-oxide-semiconductor, field-effect transistor, or "mosfet," which has an insulated gate member that controls its operation. Early mosfets had aluminum gates. But because the aluminum made the mosfets unreliable and difficult to manufacture, aluminum was abandoned in favor of polysilicon. Unfortunately, polysilicon has ten-times more electrical resistance than aluminum, which not only wastes power but also slows operation of the integrated circuits. Several efforts have been made to use materials less-resistive than polysilicon, but these have failed to yield a practical solution, since some of the materials have high electrical resistance and prevent low-voltage operation. Accordingly, one embodiment of the invention provides a gate structure that includes a doped polysilicon layer to facilitate low-voltage operation, a diffusion barrier to improve reliability, and a low-resistance aluminum, gold, or silver member to reduce gate resistance. Moreover, to overcome previous manufacturing difficulties, the inventors employ a metal-substitution fabrication technique, which entails formation of a polysilicon gate, and then substitution of metal for the polysilicon.
대표청구항▼
Many integrated circuits include a type of transistor known as a metal-oxide-semiconductor, field-effect transistor, or "mosfet," which has an insulated gate member that controls its operation. Early mosfets had aluminum gates. But because the aluminum made the mosfets unreliable and difficult to ma
Many integrated circuits include a type of transistor known as a metal-oxide-semiconductor, field-effect transistor, or "mosfet," which has an insulated gate member that controls its operation. Early mosfets had aluminum gates. But because the aluminum made the mosfets unreliable and difficult to manufacture, aluminum was abandoned in favor of polysilicon. Unfortunately, polysilicon has ten-times more electrical resistance than aluminum, which not only wastes power but also slows operation of the integrated circuits. Several efforts have been made to use materials less-resistive than polysilicon, but these have failed to yield a practical solution, since some of the materials have high electrical resistance and prevent low-voltage operation. Accordingly, one embodiment of the invention provides a gate structure that includes a doped polysilicon layer to facilitate low-voltage operation, a diffusion barrier to improve reliability, and a low-resistance aluminum, gold, or silver member to reduce gate resistance. Moreover, to overcome previous manufacturing difficulties, the inventors employ a metal-substitution fabrication technique, which entails formation of a polysilicon gate, and then substitution of metal for the polysilicon. omprises the steps in sequence of: (a) subjecting the carbon or graphite material to timed pulses in a voltage or current controlled cell; and (b) selectively etching the carbon or graphite material from step (a) using deoxygenated steam. 14. A method according to claim 13, wherein said timed pulses comprise controlled anodic potential pulsing. 15. A method according to claim 14, wherein said controlled anodic potential pulsing is conducted in an aqueous acidic solution. 16. A method according to claim 15, wherein said aqueous acidic solution comprises an acidic halide. 17. A method according to claim 13, wherein said carbon or graphite materials are subject to timed pulses in an acid saline solution. 18. A method according to claim 17, wherein said acid saline solution comprises a saturated saline solution of 1-2 M in HCl. 19. A method according to claim 13, wherein said carbon or graphite material is subjected to timed pulsing for 24-48 hours. 20. A method according to claim 13, wherein said carbon or graphite material is heated in a deoxygenated steam atmosphere at 370° C.-480° C. for 24-240 hours.
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