초록 ▼

A wafer processing apparatus is provided with a wafer carrier comprising a doorplate, a pedestal including one or more legs to support the pedestal on the doorplate, and a wafer rack positionable on the pedestal. A pedestal lock is connected to the doorplate and is selectively engageable with at lea

A wafer processing apparatus is provided with a wafer carrier comprising a doorplate, a pedestal including one or more legs to support the pedestal on the doorplate, and a wafer rack positionable on the pedestal. A pedestal lock is connected to the doorplate and is selectively engageable with at least one of the legs to lock the pedestal to the doorplate. A lock is further provided to selectively engage at least one of the wafer rack and the pedestal to lock the wafer rack to the pedestal. The pedestal is thereby prevented from falling off of the doorplate, and the wafer rack is prevented from falling off of the pedestal, during earthquake-induced vibrations and accelerations.

대표청구항 ▼

A wafer processing apparatus is provided with a wafer carrier comprising a doorplate, a pedestal including one or more legs to support the pedestal on the doorplate, and a wafer rack positionable on the pedestal. A pedestal lock is connected to the doorplate and is selectively engageable with at lea

A wafer processing apparatus is provided with a wafer carrier comprising a doorplate, a pedestal including one or more legs to support the pedestal on the doorplate, and a wafer rack positionable on the pedestal. A pedestal lock is connected to the doorplate and is selectively engageable with at least one of the legs to lock the pedestal to the doorplate. A lock is further provided to selectively engage at least one of the wafer rack and the pedestal to lock the wafer rack to the pedestal. The pedestal is thereby prevented from falling off of the doorplate, and the wafer rack is prevented from falling off of the pedestal, during earthquake-induced vibrations and accelerations. UB>OH12), phenylmethylethoxy silane (SiC9OH14), phenylmethoxyethoxysilane (SiC9O2H13), and combinations thereof; and applying an electric field to the gas mixture in the deposition chamber to form an organosilicate layer on the substrate. 13. The method of claim 11 wherein the oxidizing gas is selected from the group of nitrous oxide (N2O), oxygen (O2), ozone (O3), carbon monoxide (CO), carbon dioxide (CO2), nitrogen (N2) and combinations thereof. 14. The method of claim 10 wherein the electric field applied to the gas mixture in the deposition chamber is a radio frequency (RF) power. 15. The method of claim 14 wherein the RF power is within the range of about 50 watts to about 500 watts. 16. The method of claim 10 wherein the deposition chamber is maintained at a pressure between about 1 torr to about 10 torr. 17. The method of claim 11 wherein the oxidizing gas is provided to the deposition chamber at a flow rate in a range of about 1 sccm to about 500 sccm. 18. The method of claim 10 wherein the deposition chamber is maintained at a temperature between about 100° C. to about 400° C. 19. A method of forming a device, comprising: forming an organosilicate layer on a substrate, wherein the organosilicate layer is formed by applying an electric field to a gas mixture comprising a phenyl-based silane compound comprising an alkyl group and a Si--H bond; defining a pattern in at least one region of the organosilicate layer; and transferring the pattern defined in the at least one region of the organosilicate layer into the substrate using the organosilicate layer as a mask. 20. The method of claim 19 further comprising the step of removing the organosilicate layer from the substrate. 21. The method of claim 19 wherein the substrate has one or more material layers formed thereon. 22. The method of claim 19 wherein definition of the pattern in the at least one region of the organosilicate layer, comprises: forming a layer of energy sensitive resist material on the organosilicate layer; introducing an image of the pattern into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation; developing the image of the pattern introduced into the layer of energy sensitive resist material; and transferring the pattern through the organosilicate layer. 23. The method of claim 22 further comprising: forming an intermediate layer on the organosilicate layer prior to forming the layer of energy sensitive resist thereon, introducing the image of a pattern therein, and developing the pattern; and transferring the image of the pattern developed in the layer of energy sensitive resist material through the intermediate layer. 24. The method of claim 23 wherein the intermediate layer is an oxide. 25. The method of claim 24 wherein the oxide is selected from the group of silicon dioxide, fluorosilicate glass (FSG), and silicon oxynitride. 26. The method of claim 20 wherein the organosilicate layer is removed from the substrate using a fluorine-based compound. 27. The method of claim 26 wherein the fluorine-based compound is selected from the group of carbon tetrafluoride (CF4), fluoromethane (CF4), fluoroethane (C2F6), and fluorobutene (C4F8). 28. The method of claim 19 wherein the organosilicate layer is an anti-reflective coating at wavelengths less than about 250 nm (nanometers). 29. The method of claim 19 wherein the organosilicate layer has an absorption coefficient in a range of about 0.1 to about 0.7 at wavelengths less than about 250 nm. 30. The method of claim 29 wherein the absorption coefficient varies across the thickness of the organosilicate layer from about 0.1 to about 0.7. 31. The method of claim 19 wherein the organosilicate layer has an index of refraction in a rang e of about 1.2 to about 1.7. 32. The method of claim 19 wherein the gas mixture further comprises an oxidizing gas. 33. The method of claim 19 wherein the phenyl-based silane compound is selected from the group of phenylmethyl silane (SiC7H10), phenylethyl silane (SiC8H12), phenylmethylethylsilane (SiC9H14), phenylmethoxy silane (SiC7OH10), phenylethoxy silane (SiC8OH12), phenylmethylethoxy silane (SiC9OH14), phenylmethoxyethoxysilane (SiC9O2H13), and combinations thereof. 34. The method of claim 32 wherein the oxidizing gas is selected from the group of nitrous oxide (N2O), oxygen (O2), ozone (O3), carbon monoxide (CO), carbon dioxide (CO2), nitrogen (N2), and combinations thereof. 35. The method of claim 19 wherein the electric field applied to the gas mixture is a radio frequency (RF) power. 36. The method of claim 35 wherein the RF power is within the range of about 50 watts to about 500 watts. 37. The method of claim 19 wherein the organosilicate layer is formed in a deposition chamber maintained at a pressure between about 1 torr to about 10 torr. 38. The method of claim 19 wherein the phenyl-based silane compound is provided to the deposition chamber at a flow rate in a range of about 400 mgm to about 1000 mgm. 39. The method of claim 37 wherein an oxidizing gas is provided to the deposition chamber at a flow rate in a range of about 1 sccm to about 500 sccm. 40. The method of claim 37 wherein the deposition chamber is maintained at a temperature between about 100° C. to about 400° C. 41. A method of fabricating a damascene structure, comprising forming a first dielectric layer on a substrate; forming an organosilicate layer on the first dielectric layer, wherein the organosilicate layer is formed by applying an electric field to a gas mixture comprising a phenyl-based silane compound comprising an alkyl group and a Si--H bond; patterning the organosilicate layer to define contacts/vias therethrough; forming a second dielectric layer on the patterned organosilicate layer; patterning the second dielectric layer to define interconnects therethrough, wherein the interconnects are positioned over the contacts/vias defined in the organosilicate layer; etching the first dielectric layer to form contacts/vias therethrough; and filling the contacts/vias and the interconnects with a conductive material. 42. The method of claim 41 wherein the first dielectric layer and the second dielectric layer are each selected from the group consisting of amorphous carbon, fluorinated amorphous carbon, parylene, fluorinated silicate glass (FSG), AF4,BCB, silicon carbide, oxynitride, and combinations thereof. 43. The method of claim 41 wherein the conductive material filling the contacts/vias and interconnects is selected from the group consisting of copper, aluminum, tungsten, and combinations thereof. 44. The method of claim 41 wherein the gas mixture further comprises an oxidizing gas. 45. The method of claim 41 wherein the phenyl-based silane compound is selected from the group of phenylmethyl silane (SiC7H10), phenylethyl silane (SiC8H12), phenylmethylethylsilane (SiC9H14), phenylmethoxy silane (SiC7OH10), phenylethoxy silane (SiC8OH12), phenylmethylethoxy silane (SiC9OH14), phenylmethoxyethoxysilane (SiC9O2H13), and combinations thereof. 46. The method of claim 44 wherein the oxidizing gas is selected from the group consisting of nitrous oxide (N2O), oxygen (O2), ozone (O3), carbon monoxide (CO), carbon dioxide (CO2), nitrogen (N2), and combinations thereof. 47. The method of claim