IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0826187
(2001-04-04)
|
우선권정보 |
DE-0018049 (2000-04-12) |
발명자
/ 주소 |
- Eggers, Holger
- Klein, Rudi
- Muller, Claudia
- Brandt, Rainer
|
출원인 / 주소 |
|
대리인 / 주소 |
Norris McLaughlin & Marcus
|
인용정보 |
피인용 횟수 :
5 인용 특허 :
4 |
초록
▼
A multilayer film having a lamination side and a heat-sealable side is described. The multilayer film comprises, a) an inner layer (i) ethylene/vinyl alcohol copolymer; b) a coupling agent layer (ii) and a separate coupling agent layer (ii'), said inner layer (i) being interposed between and in cont
A multilayer film having a lamination side and a heat-sealable side is described. The multilayer film comprises, a) an inner layer (i) ethylene/vinyl alcohol copolymer; b) a coupling agent layer (ii) and a separate coupling agent layer (ii'), said inner layer (i) being interposed between and in contact with each of said coupling agent layer (ii) and said separate coupling agent layer (ii'); c) at least one further layer (iii), said separate coupling agent layer (ii') being interposed between and in contact with each of said inner layer (i) and said layer (iii); d) at least one layer (iv), said coupling agent layer (ii) being interposed between and in contact with each of said inner layer (i) and said layer (iv); and e) a heat-sealable layer (v), said layer (iv) being interposed between and in contact with each of said coupling agent layer (ii) and said heat-sealable layer (v). Layers (i), (ii), (ii'), (iii) and (v) of the multilayer film contain 0.1 to 3 wt. % of a sorbitan monoester, based on the total weight of said multilayer film. Layer (iii) defines the lamination side of the multilayer film, and the heat-sealable layer (v) defines the heat-sealable side of the multilayer film. Packaging materials comprising the multilayer film are also described.
대표청구항
▼
A multilayer film having a lamination side and a heat-sealable side is described. The multilayer film comprises, a) an inner layer (i) ethylene/vinyl alcohol copolymer; b) a coupling agent layer (ii) and a separate coupling agent layer (ii'), said inner layer (i) being interposed between and in cont
A multilayer film having a lamination side and a heat-sealable side is described. The multilayer film comprises, a) an inner layer (i) ethylene/vinyl alcohol copolymer; b) a coupling agent layer (ii) and a separate coupling agent layer (ii'), said inner layer (i) being interposed between and in contact with each of said coupling agent layer (ii) and said separate coupling agent layer (ii'); c) at least one further layer (iii), said separate coupling agent layer (ii') being interposed between and in contact with each of said inner layer (i) and said layer (iii); d) at least one layer (iv), said coupling agent layer (ii) being interposed between and in contact with each of said inner layer (i) and said layer (iv); and e) a heat-sealable layer (v), said layer (iv) being interposed between and in contact with each of said coupling agent layer (ii) and said heat-sealable layer (v). Layers (i), (ii), (ii'), (iii) and (v) of the multilayer film contain 0.1 to 3 wt. % of a sorbitan monoester, based on the total weight of said multilayer film. Layer (iii) defines the lamination side of the multilayer film, and the heat-sealable layer (v) defines the heat-sealable side of the multilayer film. Packaging materials comprising the multilayer film are also described. the at least one dielectric layer forms a second layer of a dual damascene dielectric structure. 4. An integrated circuit or partially fabricated integrated circuit including one or more dielectric layers, at least one of the dielectric layers comprising: a plurality of chemically linked caged siloxane moieties, wherein the at least one dielectric layer has a porosity of between about 25% and 75%. 5. The integrated circuit or partially fabricated integrated circuit of claim 4, wherein the at least one dielectric layer has a porosity of between about 40% and 60%. 6. An integrated circuit or partially fabricated integrated circuit including one or more dielectric layers, at least one of the dielectric layers comprising: a plurality of chemically linked caged siloxane moieties, wherein the at least one dielectric layer has an average pore size of at most about 200 Angstroms. 7. The integrated circuit or partially fabricated integrated circuit of claim 6, wherein the at least one dielectric layer has an average pore size of between about 5 and 25 Angstroms. 8. The integrated circuit or partially fabricated integrated circuit of claim 1, wherein the at least one dielectric layer has a dielectric constant of at most about 3.5. 9. The integrated circuit or partially fabricated integrated circuit of claim 1, wherein the at least one dielectric layer has a dielectric constant of at most about 2.5. 10. An integrated circuit or partially fabricated integrated circuit including one or more dielectric layers, at least one of the dielectric layers comprising: a plurality of chemically linked caged siloxane moieties; wherein the caged siloxane moieties are linked using polymerizable side chains selected from the group consisting of acrylates, methacrylates, carboxylic acids, carboxylic acid halides, halosilanes, carboxylic acid esters, sulphonic acid esters, carbamoyl halides, epoxides, isocyanates, nitriles, olefins, styrenes, amines, alcohols, alkyl halides, aryl halides, sulphonic acids, sulphonic acid halides, phosphines, silanols, and silanes, wherein the at least one dielectric layer has a porosity of between about 25% and 75%. 11. The integrated circuit or partially fabricated integrated circuit of claim 1, wherein the at least one dielectric layer has a thickness of at most about 10,000 Angstroms. 12. The integrated circuit or partially fabricated integrated circuit of claim 1, wherein the at least one dielectric layer has a thickness of at most about 5,000 Angstroms. 13. The integrated circuit or partially fabricated integrated circuit of claim 1, wherein the caged siloxane moieties are silsesquioxanes. 14. The integrated circuit or partially fabricated integrated circuit of claim 1, wherein the caged siloxane moieties are obtained from polyhedral oligomeric silsesquioxanes (POSS) monomers. 15. An integrated circuit or partially fabricated integrated circuit including one or more dielectric layers, at least one of the dielectric layers comprising: a plurality of chemically linked caged siloxane moieties, wherein the caged siloxane moieties have a cage diameter of between about 5 and 50 Angstroms. 16. The integrated circuit or partially fabricated integrated circuit of claim 15, wherein the caged siloxane moieties have a cage diameter of between about 10 and 20 Angstroms. 17. The integrated circuit or partially fabricated integrated circuit of claim 1, wherein the caged siloxane moieties are linked to one another by an organic linker. 18. The integrated circuit or partially fabricated integrated circuit of claim 1, wherein the caged siloxane moieties are linked to one another using a polymerization reaction. 19. An integrated circuit or partially fabricated integrated circuit including one or more dielectric layers, at least one of the dielectric layers comprising: a plurality of chemically linked caged siloxane moieties, wherein the caged siloxane moieties are grafted on said integrated circuit or parti
※ AI-Helper는 부적절한 답변을 할 수 있습니다.