초록 ▼

A micro-lithographic apparatus and method for selectively exposing/masking resist material on a non-planer workpiece or filamentary substrate includes a hollow, energy transparent tubular member with a hollow for containing the workpiece. The tubular member is selectively coated with a layer of ener

A micro-lithographic apparatus and method for selectively exposing/masking resist material on a non-planer workpiece or filamentary substrate includes a hollow, energy transparent tubular member with a hollow for containing the workpiece. The tubular member is selectively coated with a layer of energy-opaque material to form the desired pattern. The transparent tube and opaque coating selectively expose/mask the resist material on the workpiece. Alternatively, the apparatus and method include an energy opaque tubular member with apertures formed through the walls of the tubular member. The apertures form the desired pattern. The opaque tube with apertures selectively exposes/masks the resist material. The apparatus and method may also include an energy source and a rotating device for rotating the tubular member, with the workpiece disposed therein, to the energy source or rotating energy source around tubular member or have energy source surround tubular member.

대표청구항 ▼

A micro-lithographic apparatus and method for selectively exposing/masking resist material on a non-planer workpiece or filamentary substrate includes a hollow, energy transparent tubular member with a hollow for containing the workpiece. The tubular member is selectively coated with a layer of ener

A micro-lithographic apparatus and method for selectively exposing/masking resist material on a non-planer workpiece or filamentary substrate includes a hollow, energy transparent tubular member with a hollow for containing the workpiece. The tubular member is selectively coated with a layer of energy-opaque material to form the desired pattern. The transparent tube and opaque coating selectively expose/mask the resist material on the workpiece. Alternatively, the apparatus and method include an energy opaque tubular member with apertures formed through the walls of the tubular member. The apertures form the desired pattern. The opaque tube with apertures selectively exposes/masks the resist material. The apparatus and method may also include an energy source and a rotating device for rotating the tubular member, with the workpiece disposed therein, to the energy source or rotating energy source around tubular member or have energy source surround tubular member. n the range of from 90 seconds to 120 seconds; subsequently exposing body to irradiation with a pattern having a pitch of not more than 2 μm, wherein said exposing of the prebaked photoresist on a semiconductor body to irradiation is under conditions sufficient to form carboxylic acid groups in said photoresist; post-exposure baking the exposed photoresist, wherein said post-exposure baking is performed at a temperature within the range of from 110° C. to 120° C. and for a time within the range of from 90 seconds to 120 seconds; subsequently developing the post-exposure baked photoresist prior to stabilizing said photoresist, wherein said developing is for a time within the range of from 80 seconds to 100 seconds performed in a double puddle process; and stabilizing the developed photoresist, wherein said stabilizing the developed photoresist is deep UV stabilization, wherein said deep UV stabilization comprises baking at an initial temperature within the range of from 90° C. to 115° C. and for a time within the range of from 27 seconds to 29 seconds, subsequently ramping from the initial temperature to a final temperature within the range of from 220° C. to 230° C. at an average rate of not more than 0.5° C./second and then post-ramp baking at said final temperature for a time within the range of from 19 seconds to 21 seconds, wherein the resist is exposed to deep UV radiation for the ramp and post-ramp bake. 8. The method of claim 7, wherein the aspect ratio of the thickness of said photoresist to the width of said photo resist exceeds 3.4:1 subsequent to stabilizing the developed photoresist. 9. A photolithographic method for patterning a highly stable process comprising: forming a photoresist on a semiconductor body, said photoresist containing groups which generate carboxylic acid upon irradiation; prebaking said photoresist at a temperature within the range of from 110° C. to 120° C. and for a time within the range of from 90 seconds to 120 seconds; subsequently exposing body to irradiation under conditions sufficient to form carboxylic acid groups in said photoresist; post-exposure baking the exposed photoresist at a temperature within the range of from 110° C. to 120° C. and for a time within the range of from 90 seconds to 120 seconds; subsequently developing the post-exposure baked photoresist prior to stabilizing said photoresist, wherein the wall angle of said photoresist is within the range of from 86° to 89° after said developing; and stabilizing the developed photoresist, wherein the aspect ratio of the thickness of said photoresist to the width of said photoresist exceeds 3.4:1 subsequent to stabilizing the developed photoresist and wherein said exposing body to irradiation is performed with a pattern having a pitch of not more than 2 μm. 10. A photolithographic method for patterning a highly stable process comprising: forming a photoresist on a semiconductor body, said photoresist containing groups which generate carboxylic acid upon irradiation; prebaking said photoresist at a temperature within the range of from 110° C. to 120° C. and for a time within the range of from 90 seconds to 120 seconds; subsequently exposing body to irradiation under conditions sufficient to form carboxylic acid groups in said photoresist; post-exposure baking the exposed photoresist at a temperature within the range of from 110° C. to 120° C. and for a time within the range of from 90 seconds to 120 seconds; subsequently developing the post-exposure baked photoresist prior to stabilizing said photoresist, wherein the wall angle of said photoresist is within the range of from 86° to 89° after said developing; and stabilizing the developed photoresist, wherein the thickness of said photoresist is greater than 3.4 μm subsequent to stabilizing the developed photoresist. 11. A photolithographic method for patterning a highly stable comprising: forming a photoresist of a first thickness