초록 ▼

An adherent article, such as a bandage or adhesive tape, having a nonwoven substrate that contains water soluble fibers is provided. The water soluble fibers of the nonwoven substrate can include polyvinyl alcohol fibers that only dissolve at temperatures greater than 37° C. and/or polyvinyl alcohol

An adherent article, such as a bandage or adhesive tape, having a nonwoven substrate that contains water soluble fibers is provided. The water soluble fibers of the nonwoven substrate can include polyvinyl alcohol fibers that only dissolve at temperatures greater than 37° C. and/or polyvinyl alcohol fibers that can dissolve at temperatures less than about 37° C. The adherent article also includes a pressure-sensitive adhesive applied to the nonwoven substrate that facilitates adherence of the substrate to human skin. The pressure-sensitive adhesive can be water soluble or generally insoluble, but dispersible in water.

대표청구항 ▼

An adherent article, such as a bandage or adhesive tape, having a nonwoven substrate that contains water soluble fibers is provided. The water soluble fibers of the nonwoven substrate can include polyvinyl alcohol fibers that only dissolve at temperatures greater than 37° C. and/or polyvinyl alcohol

An adherent article, such as a bandage or adhesive tape, having a nonwoven substrate that contains water soluble fibers is provided. The water soluble fibers of the nonwoven substrate can include polyvinyl alcohol fibers that only dissolve at temperatures greater than 37° C. and/or polyvinyl alcohol fibers that can dissolve at temperatures less than about 37° C. The adherent article also includes a pressure-sensitive adhesive applied to the nonwoven substrate that facilitates adherence of the substrate to human skin. The pressure-sensitive adhesive can be water soluble or generally insoluble, but dispersible in water. tal in the trench and via opening, wherein the metal comprises Al or Cu. 11. The method according to claim 10, wherein the metal comprises Cu, and further comprising forming a barrier layer in the via opening and trench before depositing the metal. 12. A semiconductor device comprising a first dielectric film formed on a semiconductor substrate, wherein the first dielectric film comprises: a lower layer comprising a fluorine-doped silica glass; a middle layer on the lower layer and comprising a mixture of a fluorine-doped silica glass and a gradually increasing concentration of SiC; and an upper layer of SiC on the middle layer. 13. The semiconductor device of claim 12, wherein the concentration of SiC in the middle layer ranges from about 0 weight % at a lower layer/middle layer interface to about 100 weight % at a middle layer/upper layer interface. 14. The semiconductor device of claim 12, further comprising a metal filled trench formed in the first dielectric film, wherein the metal comprises Al or Cu. 15. The semiconductor device of claim 12, further comprising a second dielectric film formed on the first dielectric film; wherein the second dielectric film comprises: a second lower layer comprising an fluorine-doped silica glass formed on the first dielectric film upper layer; a second middle layer on the second lower layer and comprising a mixture of a fluorine-doped silica glass and a gradually increasing concentration of SiC; and a second upper layer of SiC on the second middle layer. 16. The semiconductor device of claim 15, wherein the concentration of SiC in the second middle layer ranges from about 0 weight % at a lower layer/middle layer interface to about 100 weight % at a middle layer/upper layer interface. 17. The semiconductor device of claim 15, further comprising a metal filled trench and via opening dual damascene structure formed in the first and second dielectric films. 18. The semiconductor device of claim 17, wherein the metal comprises Al or Cu. 19. The semiconductor device of claim 17, wherein the metal is Cu and further comprising a barrier layer underlying the metal. 20. The semiconductor device of claim 15, wherein the thicknesses of the first and second dielectric film middle layers are about 25 .ANG. to about 100 .ANG. and the thicknesses of the first and second dielectric film upper layers are about 300 .ANG. to about 500 .ANG.. t pads electroplated a Ni/Au layer thereon. 3. The method for fabricating the substrate within a Ni/Au structure electroplated on electrical contact pads as claimed in claim 2, wherein the electrical contact pads are one of bonding pads and solder ball pads. 4. The method for fabricating the substrate within a Ni/Au structure electroplated on electrical contact pads as claimed in claim 1, wherein the conducting film is composed of one of Sn, Cu, Cr, Pd, Ni, Sn/Pb and alloy thereof. 5. The method for fabricating the substrate within a Ni/Au structure electroplated on electrical contact pads as claimed in claim 1, wherein the conducting film is formed by means of one of sputtering, electroless plating, physical deposition, and chemical deposition.