$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrate 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/00
출원번호 US-0498646 (2000-02-07)
우선권정보 JP-0033667 (1999-02-12)
발명자 / 주소
  • Yamazaki, Shunpei
  • Tanaka, Yukio
  • Koyama, Jun
  • Osame, Mitsuaki
  • Murakami, Satoshi
  • Ohnuma, Hideto
  • Fujimoto, Etsuko
  • Kitakado, Hidehito
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Nixon Peabody LLP
인용정보 피인용 횟수 : 64  인용 특허 : 10

초록

A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differ

대표청구항

A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differ

이 특허에 인용된 특허 (10)

  1. Mikoshiba Hiroaki (Tokyo JPX), Active matrix liquid crystal display cell with light blocking capacitor electrode above insulating layer.
  2. Ohtani Hisashi,JPX ; Ogata Yasushi,JPX, Active matrix type display device and method of manufacturing the same.
  3. Miyazaki Minoru,JPX ; Murakami Akane,JPX ; Cui Baochun,JPX ; Yamamoto Mutsuo,JPX, Electronic circuit.
  4. Ferrin Frank J. (Plymouth MN) Droessler Justin G. (Fridley MN), Head gear display system using off-axis image sources.
  5. Matsushima Yasuhiro,JPX, Liquid crystal display device having an insulation film made of organic material between an additional capacity and a bu.
  6. Abecassis Max (19020 NE. 20 Ave. Miami FL 33179), Method and system for automatically tracking a zoomed video image.
  7. Ohtani Hisashi (Kanagawa JPX) Miyanaga Akiharu (Kanagawa JPX) Fukunaga Takeshi (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX), Method for manufacturing a semiconductor device.
  8. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Shibata Hiroshi,JPX ; Fukunaga Takeshi,JPX, Pixel TFT and driver TFT having different gate insulation width.
  9. Zhang Hongyong,JPX ; Ohnuma Hideto,JPX ; Yamaguchi Naoaki,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for fabricating the same.
  10. Ohtani Hisashi,JPX, Semiconductor integrated circuit and fabrication method thereof.

이 특허를 인용한 특허 (64)

  1. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Active matrix display in which LDD regions in the driver circuit and the storage capacitor in the pixel section have the same dopant concentration.
  2. Tanaka, Yukio, Display device.
  3. Tanaka,Yukio, Display device.
  4. Yamazaki,Shunpei; Murakami,Satoshi; Koyama,Jun; Tanaka,Yukio; Kitakado,Hidehito; Ohnumo,Hideto, Display including casing and display unit.
  5. Kimura, Hajime, Electro-optical device.
  6. Kimura, Hajime, Electro-optical device.
  7. Kimura, Hajime, Electro-optical device.
  8. Kimura,Hajime, Electro-optical device.
  9. Yamazaki,Shunpei; Murakami,Satoshi; Arai,Yasuyuki, Electroluminescence display device having a semiconductor substrate.
  10. Ishizuka, Shinichi, Electroluminescence display unit.
  11. Arai,Toshiaki; Hasumi,Taroh, In-plane switching liquid crystal display and liquid crystal display cell comprising a groove formed above the data line.
  12. Takayama,Toru; Yamagata,Hirokazu; Koura,Akihiko; Yamazaki,Shunpei, Light emitting device and method of fabricating the same.
  13. Yamazaki, Shunpei; Akiba, Mai; Koyama, Jun, Light emitting device, driving method of light emitting device and electronic device.
  14. Yamazaki, Shunpei; Akiba, Mai; Koyama, Jun, Light emitting device, driving method of light emitting device and electronic device.
  15. Yamazaki, Shunpei; Akiba, Mai; Koyama, Jun, Light emitting device, driving method of light emitting device and electronic device.
  16. Yamazaki, Shunpei; Akiba, Mai; Koyama, Jun, Light emitting device, driving method of light emitting device and electronic device.
  17. Arai, Toshiaki; Hasumi, Taroh, Liquid crystal display cell and liquid crystal display.
  18. Yamazaki, Shunpei; Koyama, Jun, Method for manufacturing an electrooptical device.
  19. Hwang, Eui-Hoon; Kim, Deuk-Jong, Method of fabricating display device having a pixel region and a circuit region over the same substrate.
  20. Reynolds, Kieran; Ramsdale, Catherine; Jacobs, Kevin; Reeves, William, Multiple conductive layer TFT.
  21. Reynolds, Kieran; Ramsdale, Catherine; Jacobs, Kevin; Reeves, William, Multiple conductive layer TFT.
  22. Yamazaki, Shunpei; Arai, Yasuyuki, Organic electroluminescent display device.
  23. Yamazaki, Shunpei; Arai, Yasuyuki, Organic electroluminescent display device.
  24. Yamazaki, Shunpei; Arai, Yasuyuki, Organic electroluminescent display device.
  25. Yamazaki, Shunpei; Arai, Yasuyuki, Organic electroluminescent display device.
  26. Yamazaki, Shunpei; Arai, Yasuyuki, Organic electroluminescent display device.
  27. Arao, Tatsuya, Semiconductor device.
  28. Ohnuma, Hideto, Semiconductor device.
  29. Tanada, Yoshifumi, Semiconductor device.
  30. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  31. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  32. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  33. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  34. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  35. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  36. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  37. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  38. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  39. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  40. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  41. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  42. Yamazaki,Shunpei; Murakami,Satoshi; Koyama,Jun; Tanaka,Yukio; Kitakado,Hidehito; Ohnumo,Hideto, Semiconductor device and fabrication method thereof.
  43. Takano, Tamae; Isobe, Atsuo, Semiconductor device and manufacturing method of the same.
  44. Takano, Tamae; Isobe, Atsuo, Semiconductor device and manufacturing method of the same.
  45. Takano, Tamae; Isobe, Atsuo, Semiconductor device and manufacturing method of the same.
  46. Nakajima, Setsuo, Semiconductor device and manufacturing method thereof.
  47. Nakajima,Setsuo, Semiconductor device and manufacturing method thereof.
  48. Tanaka, Tetsuhiro; Endo, Yuta, Semiconductor device and manufacturing method thereof.
  49. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and manufacturing method thereof.
  50. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and manufacturing method thereof.
  51. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and manufacturing method thereof.
  52. Yamazaki,Shunpei; Arai,Yasuyuki; Koyama,Jun, Semiconductor device and manufacturing method thereof.
  53. Yamazaki,Shunpei; Arai,Yasuyuki; Koyama,Jun, Semiconductor device and manufacturing method thereof.
  54. Yamazaki, Shunpei; Murakami, Satoshi; Arai, Yasuyuki, Semiconductor device and method of fabricating the same.
  55. Yamazaki,Shunpei; Koyama,Jun, Semiconductor device and method of fabricating the same.
  56. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device comprising a pixel unit including an auxiliary capacitor.
  57. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito, Semiconductor device comprising a second organic film over a third insulating film wherein the second organic film overlaps with a channel formation region and a second conductive film.
  58. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito, Semiconductor device comprising a second organic film over a third insulating film wherein the second organic film overlaps with a channel formation region and a second conductive film.
  59. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito, Semiconductor device comprising a spacer wherein the spacer has an opening through which a pixel electrode is connected to a first transistor.
  60. Yamazaki, Shunpei; Kawamata, Ikuko; Arai, Yasuyuki, Semiconductor device including a memory.
  61. Shibata, Hiroshi; Maekawa, Shinji, Semiconductor device, manufacturing method thereof, and display device.
  62. Shibata, Hiroshi; Maekawa, Shinji, Semiconductor device, manufacturing method thereof, and display device.
  63. Shibata, Hiroshi; Maekawa, Shinji, Semiconductor device, manufacturing method thereof, and display device.
  64. Zhan, Zhi-Feng, Thin film semiconductor device, organic light-emitting display device, and method of manufacturing the thin film semiconductor device.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로