초록 ▼

A semiconductor device includes a first metallization layer, a first diffusion barrier layer, a first etch stop layer, a dielectric layer and a via extending through the dielectric layer, the first etch stop layer, and the first diffusion barrier layer. The first diffusion barrier layer is disposed

A semiconductor device includes a first metallization layer, a first diffusion barrier layer, a first etch stop layer, a dielectric layer and a via extending through the dielectric layer, the first etch stop layer, and the first diffusion barrier layer. The first diffusion barrier layer is disposed over the first metallization layer. The first etch stop layer is disposed over the first diffusion barrier layer, and the dielectric layer is disposed over the first etch stop layer. The via can also have rounded corners. A sidewall diffusion barrier layer can be disposed on sidewalls of the via, and the sidewall diffusion barrier layer is formed from the same material.as the first diffusion barrier layer. The first diffusion barrier layer can be formed from silicon carbide. A method of manufacturing the semiconductor device is also disclosed.

대표청구항 ▼

1. A semiconductor device, comprising: a first metallization layer; a first diffusion barrier layer formed from a first material disposed over said first metallization layer; a first etch stop layer formed from a second material disposed directly on said first diffusion barrier layer; dielectr

1. A semiconductor device, comprising: a first metallization layer; a first diffusion barrier layer formed from a first material disposed over said first metallization layer; a first etch stop layer formed from a second material disposed directly on said first diffusion barrier layer; dielectric layer disposed over said first etch stop layer; an opening extending through said dielectric layer, said first etch stop layer, and said first diffusion barrier layer; and a sidewall diffusion barrier layer disposed directly on sidewalls of said opening, wherein said first material is different from said second material, and said sidewall diffusion barrier layer is formed from the same material as said first diffusion barrier layer, wherein said first diffusion barrier layer includes silicon carbide. 2. The semiconductor device according to claim 1, further comprising a second diffusion barrier layer disposed over said sidewall diffusion barrier layer. 3. A semiconductor device, comprising: a first metallization layer; a first diffusion barrier layer formed from a first material disposed over said first metallization layer; a second etch stop layer formed from a second material disposed directly on said first diffusion barrier layer; a first dielectric layer disposed over said second etch stop layer; a first etch stop layer disposed over said first dielectric layer; a second dielectric layer disposed over said first etch stop layer; a trench extending through said second dielectric layer and said first etch stop layer; a via extending from said trench through said first dielectric layer, said second etch stop layer, and said first diffusion barrier layer to said first metallization layer; and a sidewall diffusion barrier layer disposed directly on sidewalls of said opening, wherein said first material is different from said second material, and said sidewall diffusion barrier layer is formed from the same material as said first diffusion barrier layer, wherein said first diffusion barrier layer includes silicon carbide. 4. The semiconductor device according to claim 3, further comprising a second diffusion barrier layer disposed over said sidewall diffusion barrier layer. 5. A semiconductor device, comprising: a first metallization layer; a first dielectric layer disposed over said first metallization layer; a second dielectric layer disposed over said first dielectric layer, said second dielectric layer defining a trench extending through said second dielectric layer to said first dielectric layer and said first dielectric layer defining a via extending from said trench through said first dielectric layer to said first metallization layer; a first sidewall diffusion barrier layer formed from silicon carbide disposed on sidewalls of said via and trench; a second sidewall diffusion barrier layer formed from a second material disposed over said first sidewall diffusion barrier layer, said second sidewall diffusion barrier layer formed from a material different than silicon carbide; and a conductive material disposed within said via and trench, wherein the first sidewall diffusion barrier layer is formed by reverse sputtering. 6. The semiconductor device according to claim 5, wherein said first sidewall diffusion barrier is open to said first metallization layer.