초록 ▼

An ion implantation method which can accurately control the effective dose amount even in ion implantation at a very low energy. This ion implantation method comprises the steps of carrying out preamorphization ion implantation for a semiconductor substrate in an ion implantation apparatus; then cle

An ion implantation method which can accurately control the effective dose amount even in ion implantation at a very low energy. This ion implantation method comprises the steps of carrying out preamorphization ion implantation for a semiconductor substrate in an ion implantation apparatus; then cleaning the surface of semiconductor substrate in a cleaning apparatus so as to eliminate an oxidized film; and thereafter carrying out ion implantation again in the ion implantation apparatus under a low implantation energy so as to form a shallow junction in the semiconductor substrate. As a consequence, the influence of the oxidized film formed by preamorphization ion implantation can be suppressed, whereby the effective dose can be controlled accurately.

대표청구항 ▼

1. An ion implantation method comprising: a first ion implanting of a surface of a semiconductor substrate to attain an amorphous state; cleaning said surface of the semiconductor substrate subjected to said first ion implanting; exposing said surface of the semiconductor substrate to oxygen fo

1. An ion implantation method comprising: a first ion implanting of a surface of a semiconductor substrate to attain an amorphous state; cleaning said surface of the semiconductor substrate subjected to said first ion implanting; exposing said surface of the semiconductor substrate to oxygen for a time sufficient to form an oxide layer on said surface; and a second ion implanting under a low implantation energy to form a shallow junction in said semiconductor substrate. 2. An ion implantation method according to claim 1, wherein the cleaning said surface comprises applying hydrofluoric acid. 3. An ion implantation method according to claim 1, wherein the ion implantation method is repeated for multiple substrates and the time sufficient to form the oxide layer is substantially the same for each substrate. 4. An ion implantation method according to claim 1, wherein an ion species employed in the first ion implanting is at least one member selected from the group consisting of germanium, silicon, argon and xenon. 5. An ion implantation method according to claim 1, wherein an ion species employed in the second ion implanting is boron, said implantation energy being about 2 keV or lower.